AOD424 [AOS]
20V N-Channel MOSFET; 20V N沟道MOSFET
| 型号： | AOD424 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 20V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：457K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD424
20V N-Channel MOSFET
General Description
Product Summary
VDS
20V
The AOD424 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=4.5V)
RDS(ON) (at VGS=4.5V)
RDS(ON) (at VGS=2.5V)
45A
< 4.4mΩ
< 5.7mΩ
100% UIS Tested
100% Rg Tested
TO252
DPAK
D
Top View
Bottom View
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
20
±12
45
V
V
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
ID
TC=100°C
35
A
A
IDM
160
18
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
15
IAS, IAR
57
A
EAS, EAR
162
100
50
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
TA=25°C
2.5
PDSM
W
°C
Power Dissipation A
1.6
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
16
Max
20
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
41
50
RθJC
1.2
1.5
Rev 0: February 2011
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Page 1 of 6
AOD424
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
20
V
VDS=20V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=4.5V, ID=20A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
1.6
nA
V
VGS(th)
ID(ON)
0.5
1
160
A
3.6
5.1
4.5
105
0.7
4.4
6.2
5.7
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
V
GS=2.5V, ID=20A
DS=5V, ID=20A
mΩ
S
V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous CurrentG
1
V
45
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
3080 3860 4630
pF
pF
pF
Ω
VGS=0V, VDS=10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
520
350
0.6
740
580
1.4
960
810
2.1
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=10V, ID=20A
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
28
36
9
43
nC
nC
nC
ns
ns
ns
ns
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
12
7
VGS=10V, VDS=10V, RL=0.5Ω,
RGEN=3Ω
8
tD(off)
tf
70
18
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
13
29
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
17
36
20
43
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: February 2011
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Page 2 of 6
AOD424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
80
60
40
20
0
4.5V
2.5V
VDS=5V
2V
125°C
25°C
VGS=1.5V
0
1
2
3
4
5
0.5
1
1.5
VGS(Volts)
2
2.5
VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
8
6
4
2
0
1.8
1.6
1.4
1.2
1
VGS=4.5V
ID=20A
VGS=2.5V
=2.5V
VGS
ID=20A
VGS=4.5V
0.8
0
25
50
75
100 125 150 175 200
0
5
10
15
ID (A)
20
25
30
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
10
9
1.0E+02
1.0E+01
ID=20A
125°C
25°C
8
1.0E+00
7
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
6
5
25°C
4
3
2
1
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
0
2
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: February 2011
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Page 3 of 6
AOD424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
7000
VDS=10V
ID=20A
6000
5000
4000
3000
2000
1000
0
Ciss
Coss
Crss
0
10
20
Qg (nC)
30
40
0
5
10
15
20
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
10µs
TJ(Max)=175°C
TC=25°C
RDS(ON)
100µs
1ms
10ms
DC
0.1
TJ(Max)=175°C
TC=25°C
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: February 2011
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Page 4 of 6
AOD424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
120
100
TA=25°C
TA=100°C
80
100
60
40
20
0
TA=150°C
TA=125°C
10
1
10
100
1000
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note F)
100
125
150
175
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
100
80
60
40
20
0
60
TA=25°C
50
40
30
20
10
0
0.0001
0.01
1
100
0
25
50
75
100
125
150
175
Pulse Width (s)
TCASE (°C)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: February 2011
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Page 5 of 6
AOD424
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 0: February 2011
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Page 6 of 6
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