AOD434L [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOD434L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD434
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
VDS (V) = 20V
The AOD434 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. It is ESD protected to
a 2KV HBM rating. Standard Product AOD434 is Pb-
free (meets ROHS & Sony 259 specifications).
AOD434L is a Green Product ordering option.
AOD434 and AOD434L are electrically identical.
ID = 18A (VGS = 10V)
RDS(ON) < 14mΩ (VGS = 10V)
RDS(ON) < 16mΩ (VGS = 4.5V)
RDS(ON) < 21mΩ (VGS = 2.5V)
RDS(ON) < 30mΩ (VGS = 1.8V)
ESD Rating: 2KV HBM
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
Continuous Drain
Current G
Pulsed Drain Current C
Avalanche Current C
±12
18
V
A
TC=25°C
TC=100°C
ID
18
IDM
IAR
EAR
30
18
A
Repetitive avalanche energy L=0.1mH C
37
mJ
TC=25°C
Power Dissipation B
TC=100°C
60
PD
W
30
TA=25°C
2.5
PDSM
W
Power Dissipation A
TA=70°C
1.6
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Symbol
Typ
16.7
40
Max
25
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
50
RθJC
1.9
2.5
Alpha & Omega Semiconductor, Ltd.
AOD434
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
20
V
V
DS=16V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
VDS=0V, VGS=±10V
10
BVGSO
VGS(th)
ID(ON)
VDS=0V, IG=±250uA
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=18A
±12
0.5
30
V
V
A
0.75
1
On state drain current
10.9
14.3
12.6
16.5
23.2
36
14
18
16
21
30
mΩ
TJ=125°C
mΩ
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=15A
VGS=2.5V, ID=10A
VGS=1.8V, ID=5A
VDS=5V, ID=18A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
0.73
1
Maximum Body-Diode Continuous Current
18
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1810
232
200
1.6
pF
pF
pF
Ω
VGS=0V, VDS=10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
40.1
8.9
1.7
6.2
4
nC
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
VGS=10V, VDS=10V, ID=18A
nC
nC
ns
ns
ns
ns
15
VGS=10V, VDS=10V, RL=0.56Ω,
RGEN=3Ω
tD(off)
tf
42.2
18.2
23.2
4.9
trr
IF=18A, dI/dt=100A/µs
IF=18A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
Rev 3 : July 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD434
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
35
30
25
20
15
10
5
30
25
20
15
10
5
10
2.5V
4.5V
VDS=5V
2V
125°C
VGS=1.5V
25°C
0
0
0
1
2
3
4
5
0
0.5
1
V
1.5
GS(Volts)
2
2.5
VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
30
25
20
15
10
5
1.8
1.6
1.4
1.2
1
VGS=4.5V
ID=18A
VGS=1.8V
VGS=2.5V
VGS=10V
VGS=1.8V
VGS=2.5V
VGS=4.5V
VGS=10V
0.8
0
5
10
15
20
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
I
D (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
35
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
30
25
20
15
10
5
ID=18A
125°C
25°C
125°C
25°C
0
2
4
6
8
10
0.0
0.2
0.4
0.6
SD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
1.4
V
GS (Volts)
V
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOD434
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
5
4
3
2
1
0
VDS=10V
ID=18A
2500
2000
1500
1000
500
Ciss
Coss
Crss
0
0
5
10
15
20
25
0
5
10
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
DS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
50
TJ(Max)=150°C
TA=25°C
40
30
20
10
0
RDS(ON)
1ms
100µs
limited
1s
10s
DC
10ms
0.1s
TJ(Max)=150°C
TA=25°C
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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