AOD425 [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AOD425 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD425
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
TheꢀAOD425ꢀusesꢀadvancedꢀtrenchꢀtechnologyꢀto
provideꢀexcellentꢀRDS(ON)ꢀandꢀultraꢁlowꢀlowꢀgateꢀcharge
withꢀaꢀ25Vꢀgateꢀrating.ꢀThisꢀdeviceꢀisꢀsuitableꢀforꢀuseꢀasꢀa
loadꢀswitchꢀorꢀinꢀPWMꢀapplications.ꢀTheꢀdeviceꢀisꢀESD
protected.
VDSꢀ(V)ꢀ=ꢀꢁ30V
IDꢀ=ꢀꢁ20Aꢀ(VGSꢀ=ꢀꢁ10V)
RDS(ON)ꢀ<ꢀ17mΩꢀ(VGSꢀ=ꢀꢁ10V)
R
DS(ON)ꢀ<ꢀ35mΩꢀ(VGSꢀ=ꢀꢁ5V)
ꢀꢀꢀꢀꢁRoHSꢀCompliant
ꢀꢀꢀꢀꢀꢁHalogenꢀFree*
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀESD Protected!
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ100% Rg Tested!
TO-252
D
D-PAK
Bottom View
Top View
D
G
G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Maximum
ꢁ30
Units
Symbol
VDS
DrainꢁSourceꢀVoltage
GateꢁSourceꢀVoltage
V
V
VGS
±25
TC=25°C
ꢁ40
ContinuousꢀDrain
CurrentꢀF
PulsedꢀDrainꢀCurrentꢀC
TC=100°C
ID
A
ꢁ30
IDM
ꢁ70
T
T
A=25°C
A=70°C
ꢁ9
ContinuousꢀDrain
Current
IDSM
A
ꢁ7
50
TC=25°C
TC=100°C
TA=25°C
TA=70°C
PD
W
PowerꢀDissipationꢀB
25
2.3
PDSM
W
PowerꢀDissipationꢀA
1.5
JunctionꢀandꢀStorageꢀTemperatureꢀRange
TJ,ꢀTSTG
ꢁ55ꢀtoꢀ175
°C
Thermal Characteristics
Parameter
Units
°C/W
°C/W
°C/W
Symbol
Typ
18
Max
22
55
3
MaximumꢀJunctionꢁtoꢁAmbientꢀA
tꢀꢀ≤ꢀ10s
RθJA
MaximumꢀJunctionꢁtoꢁAmbientꢀA
MaximumꢀJunctionꢁtoꢁCaseꢀB
SteadyꢁState
SteadyꢁState
44
2.4
RθJC
Alpha & Omega Semiconductor, Ltd.
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AOD425
Electrical Characteristics (T=25°C unless otherwise noted)
J
Parameter
Conditions
Symbol
Min
Typ
Max Units
STATIC PARAMETERS
ID=ꢁ250uA,ꢀVGS=0V
VDS=ꢁ30V,ꢀVGS=0V
BVDSS
DrainꢁSourceꢀBreakdownꢀVoltage
ꢁ30
V
ꢁ1
IDSS
ZeroꢀGateꢀVoltageꢀDrainꢀCurrent
µA
ꢁ5
TJ=55°C
V
DS=0V,ꢀVGS=ꢀ±25V
IGSS
GateꢁBodyꢀleakageꢀcurrent
GateꢀThresholdꢀVoltage
Onꢀstateꢀdrainꢀcurrent
±10
ꢁ3.5
uA
V
VDS=VGSꢀꢀID=ꢁ250µA
VGS=ꢁ10V,ꢀVDS=ꢁ5V
VGS=ꢁ10V,ꢀID=ꢁ20A
VGS(th)
ID(ON)
ꢁ1.5
ꢁ70
ꢁ2.45
A
13.5
18.5
27
17
24
35
RDS(ON)
StaticꢀDrainꢁSourceꢀOnꢁResistance
TJ=125°C
mΩ
VGS=ꢁ5V,ꢀID=ꢁ20A
VDS=ꢁ5V,ꢀID=ꢁ20A
IS=ꢁ1A,VGS=0V
gFS
VSD
IS
ForwardꢀTransconductance
DiodeꢀForwardꢀVoltage
27
S
V
A
ꢁ0.72
ꢁ1
MaximumꢀBodyꢁDiodeꢀContinuousꢀCurrent
ꢁ40
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
InputꢀCapacitance
1760 2200
360
pF
pF
pF
Ω
VGS=0V,ꢀVDS=ꢁ15V,ꢀf=1MHz
OutputꢀCapacitance
ReverseꢀTransferꢀCapacitance
Gateꢀresistance
255
VGS=0V,ꢀVDS=0V,ꢀf=1MHz
6.4
8
SWITCHING PARAMETERS
Qg(10V) TotalꢀGateꢀCharge
Qg(4.5V) TotalꢀGateꢀCharge
30
11
7
38
nC
nC
nC
nC
ns
VGS=ꢁ10V,ꢀVDS=ꢁ15V,ꢀID=ꢁ20A
Qgs
Qgd
tD(on)
tr
GateꢀSourceꢀCharge
GateꢀDrainꢀCharge
TurnꢁOnꢀDelayTime
TurnꢁOnꢀRiseꢀTime
TurnꢁOffꢀDelayTime
TurnꢁOffꢀFallꢀTime
8
11.5
8
VGS=ꢁ10V,ꢀVDS=ꢁ15V,
ns
RL=0.75Ω,ꢀRGEN=3Ω
tD(off)
tf
35
18.5
24
16
ns
ns
IF=ꢁ20A,ꢀdI/dt=100A/µs
IF=ꢁ20A,ꢀdI/dt=100A/µs
trr
BodyꢀDiodeꢀReverseꢀRecoveryꢀTime
BodyꢀDiodeꢀReverseꢀRecoveryꢀCharge
30
ns
Qrr
nC
A.ꢀTheꢀvalueꢀofꢀRθJAꢀisꢀmeasuredꢀwithꢀtheꢀdeviceꢀmountedꢀonꢀ1inꢀ2ꢀFRꢁ4ꢀboardꢀwithꢀ2oz.ꢀCopper,ꢀinꢀaꢀstillꢀairꢀenvironmentꢀwithꢀTꢀAꢀ=25°C.ꢀThe
ꢀ
PowerꢀdissipationꢀPDSMꢀisꢀbasedꢀonꢀt<10sꢀRꢀθJAꢀandꢀtheꢀmaximumꢀallowedꢀjunctionꢀtemperatureꢀofꢀ150°C.ꢀTheꢀvalueꢀinꢀanyꢀꢀgivenꢀapplication
dependsꢀonꢀtheꢀuser'sꢀspecificꢀboardꢀdesign,ꢀandꢀtheꢀmaximumꢀtemperatureꢀofꢀ175°CꢀmayꢀbeꢀusedꢀifꢀtheꢀPCBꢀallowsꢀit.
B.ꢀTheꢀpowerꢀdissipationꢀPDꢀisꢀbasedꢀonꢀTJ(MAX)=175°C,ꢀusingꢀjunctionꢁtoꢁcaseꢀthermalꢀresistance,ꢀandꢀisꢀmoreꢀusefulꢀinꢀsettingꢀtheꢀupper
dissipationꢀlimitꢀforꢀcasesꢀwhereꢀadditionalꢀheatsinkingꢀisꢀused.
C:ꢀRepetitiveꢀrating,ꢀpulseꢀwidthꢀlimitedꢀbyꢀjunctionꢀtemperatureꢀTJ(MAX)=175°C.
D.ꢀTheꢀRꢀθJAꢀisꢀtheꢀsumꢀofꢀtheꢀthermalꢀimpedenceꢀfromꢀjunctionꢀtoꢀcaseꢀRꢀθJCꢀandꢀcaseꢀtoꢀambient.
E.ꢀTheꢀstaticꢀcharacteristicsꢀinꢀFiguresꢀ1ꢀtoꢀ6ꢀareꢀobtainedꢀusingꢀ<300ꢀusꢀpulses,ꢀdutyꢀcycleꢀ0.5%ꢀmax.
F.ꢀTheseꢀcurvesꢀareꢀbasedꢀonꢀtheꢀjunctionꢁtoꢁcaseꢀthermalꢀimpedenceꢀwhichꢀisꢀmeasuredꢀwithꢀtheꢀdeviceꢀmountedꢀtoꢀaꢀlargeꢀheatsink,ꢀassuming
aꢀmaximumꢀjunctionꢀtemperatureꢀofꢀTJ(MAX)=175°C.ꢀTheꢀSOAꢀcurveꢀprovidesꢀaꢀsingleꢀpulseꢀrating.
G.ꢀTheꢀmaximumꢀcurrentꢀratingꢀisꢀlimitedꢀbyꢀbondꢁwires.
H.ꢀTheseꢀtestsꢀareꢀperformedꢀwithꢀtheꢀdeviceꢀmountedꢀonꢀ1ꢀinꢀꢀ2ꢀFRꢁ4ꢀboardꢀwithꢀ2oz.ꢀCopper,ꢀinꢀaꢀstillꢀairꢀenvironmentꢀwithꢀT =25°C.
A
*Thisꢀdeviceꢀisꢀguaranteedꢀgreenꢀafterꢀdataꢀcodeꢀ8X11ꢀ(Sepꢀ1STꢀ2008).
Rev1:ꢀSep.ꢀ2008
ꢀ
THISꢀPRODUCTꢀHASꢀBEENꢀDESIGNEDꢀANDꢀQUALIFIEDꢀFORꢀTHEꢀCONSUMERꢀMARKET.ꢀAPPLICATIONSꢀORꢀUSESꢀASꢀCRITICALꢀ
COMPONENTSꢀINꢀLIFEꢀSUPPORTꢀDEVICESꢀORꢀSYSTEMSꢀAREꢀNOTꢀAUTHORIZED.ꢀAOSꢀDOESꢀNOTꢀASSUMEꢀANYꢀLIABILITYꢀARISING
OUTꢀOFꢀSUCHꢀAPPLICATIONSꢀORꢀUSESꢀOFꢀITSꢀPRODUCTS.ꢀꢀAOSꢀRESERVESꢀTHEꢀRIGHTꢀTOꢀIMPROVEꢀPRODUCTꢀDESIGN,
FUNCTIONSꢀANDꢀRELIABILITYꢀWITHOUTꢀNOTICE
Alpha & Omega Semiconductor, Ltd.
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AOD425
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
60
50
40
30
20
10
0
25
20
15
10
5
VDS=ꢁ5V
125°C
ꢁ10V
ꢁ5V
ꢁ4.5V
25°C
VGS=ꢁ4V
4
0
0
1
2
3
5
2
2.5
3
3.5
4
4.5
5
VDS (Volts)
VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
40.0
30.0
20.0
10.0
0.0
1.8
1.6
1.4
1.2
1
ID=ꢁ20A
VGS=ꢁ10V
VGS=ꢁ5V
VGS=ꢁ5V
VGS=ꢁ10V
0.8
0
5
10
15
20
25
0
50
100
150
200
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
40
30
20
10
0
1.0E+02
1.0E+01
1.0E+00
1.0Eꢁ01
1.0Eꢁ02
ID=ꢁ20A
125°C
125°C
25°C
1.0Eꢁ03
25°C
1.0Eꢁ04
1.0Eꢁ05
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
0
5
10
15
20
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
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AOD425
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2500
10
8
VDS=ꢁ15V
ID=ꢁ20A
Ciss
2000
1500
1000
500
0
6
4
Coss
2
Crss
0
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
25
30
35
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
1000
100
10
100
TJ(Max)=175°C
TC=25°C
80
60
40
20
10µs
RDS(ON)
limited
100µs
1ms
DC
1
10ms
TJ(Max)=175°C
0.1
TC=25°C
0.01
0.01
0.1
1
10
100
0.0001 0.001
0.01
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
Inꢀdescendingꢀorder
D=0.5,ꢀ0.3,ꢀ0.1,ꢀ0.05,ꢀ0.02,ꢀ0.01,ꢀsingleꢀpulse
TJ,PK=TA+PDM.ZθJC.RθJC
R
θJC=3°C/W
PD
0.1
Ton
T
SingleꢀPulse
0.0001
0.01
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
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AOD425
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
45
40
35
30
25
20
15
10
5
60
50
40
30
20
10
0
0
0
25
50
75
100
125
150
175
0
25
50
75
TCASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
80
60
40
20
0
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
D=Ton/T
Inꢀdescendingꢀorder
D=0.5,ꢀ0.3,ꢀ0.1,ꢀ0.05,ꢀ0.02,ꢀ0.01,ꢀsingleꢀpulse
TJ,PK=TA+PDM.ZθJA.RθJA
R
θJA=55°C/W
0.1
PD
0.01
Ton
T
SingleꢀPulse
0.01
0.001
0.00001
0.0001
0.001
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD425
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
f
td(off)
td(on)
t
r
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
trr
Vds -
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Ig
Alpha & Omega Semiconductor, Ltd.
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