AOD422 [AOS]
20V N-Channel MOSFET; 20V N沟道MOSFET
| 型号： | AOD422 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 20V N-Channel MOSFET |
| 文件： | 总5页 (文件大小：428K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD422
20V N-Channel MOSFET
General Description
Product Summary
VDS
20V
The AOD422 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as
a load switch or in PWM applications. It is ESD
protected.
ID (at VGS=4.5V)
RDS(ON) (at VGS=4.5V)
RDS(ON) (at VGS =2.5V)
RDS(ON) (at VGS =1.8V)
20A
< 25mΩ
< 28mΩ
< 34mΩ
ESD protected
100% UIS Tested
TO252
DPAK
D
Top View
Bottom View
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
20
±8
20
16
V
V
VGS
TC=25°C
Continuous Drain
Current G
ID
TC=100°C
A
Pulsed Drain Current C
IDM
90
TA=25°C
TA=70°C
8
6.5
Continuous Drain
Current
IDSM
A
Avalanche Current C
IAS, IAR
15
A
Avalanche energy L=0.1mH C
EAS, EAR
11
mJ
TC=25°C
Power Dissipation B
TC=100°C
37
PD
W
18
TA=25°C
2.5
PDSM
W
°C
Power Dissipation A
1.6
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
16.7
40
Max
25
50
4
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
RθJC
3
Rev 5: July 2010
www.aosmd.com
Page 1 of 5
AOD422
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
20
V
VDS=20V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS= ±4.5V
±1
±10
1.1
uA
uA
V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±8V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=4.5V, ID=10A
0.4
45
0.7
Gate Threshold Voltage
On state drain current
A
16
22
25
31
28
34
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=2.5V, ID=8A
VGS=1.8V, ID=5A
VDS=5V, ID=10A
IS=1A,VGS=0V
18
mΩ
mΩ
S
21
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
55
0.62
1
V
Maximum Body-Diode Continuous Current
20
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1035 1295 1650
pF
pF
VGS=0V, VDS=10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
110
50
160
87
210
125
2.7
pF
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=10V, ID=10A
0.9
1.8
ΚΩ
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
10
4.2
nC
nC
nC
ns
ns
us
us
2.6
280
328
3.76
2.24
VGS=10V, VDS=10V, RL=1Ω,
RGEN=3Ω
tD(off)
tf
trr
IF=10A, dI/dt=500A/µs, VGS=-9V
IF=10A, dI/dt=500A/µs, VGS=-9V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
25
75
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 5: July 2010
www.aosmd.com
Page 2 of 5
AOD422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
25
20
15
10
5
4.5V
2.5V
VDS=5V
1.8V
3.1V
125°C
VGS=1.5V
25°C
0
0
0
0.5
1
1.5
2
2.5
0
0.5
1
1.5
VDS (Volts)
2
2.5
3
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
30
25
20
15
10
1.6
VGS=2.5V
ID=8A
1.4
1.2
1
VGS=1.8V
VGS=2.5V
VGS=1.8V
ID=5A
VGS=4.5V
VGS=4.5V
ID=10A
0.8
0
25
50
75
100
125
150
175
0
5
10
ID (A)
15
20
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. JunctionTemperature
(Note E)
60
50
40
30
20
10
1.0E+01
ID=10A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
125°C
25°C
0
2
4
6
8
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 5: July 2010
www.aosmd.com
Page 3 of 5
AOD422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
1800
VDS=10V
ID=10A
1600
1400
1200
1000
800
600
400
200
0
Ciss
Coss
Crss
0
2
4
6
8
10
12
0
5
10
15
20
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
10000
1000
100
10
1000.0
100.0
10.0
1.0
TJ(Max)=175°C
TA=25°C
10µs
100µs
RDS(ON)
1ms
10ms
DC
TJ(Max)=175°C
TC=25°C
0.1
1
0.0
0.00001
0.001
0.1
10
1000
0.01
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=50°C/W
0.1
0.01
0.001
Single Pulse
0.01
Ton
T
0.00001
0.0001
0.001
0.1
Pulse Width (s)
1
10
100
1000
Figure 11: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 5: July 2010
www.aosmd.com
Page 4 of 5
AOD422
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 5: July 2010
www.aosmd.com
Page 5 of 5
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