AOD420L [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOD420L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD420
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD420 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AOD420 is Pb-free
(meets ROHS & Sony 259 specifications). AOD420L
is a Green Product ordering option. AOD420 and
AOD420L are electrically identical.
VDS (V) = 30V
ID = 10A (VGS = 10V)
R
DS(ON) < 28mΩ (VGS = 10V)
DS(ON) < 42mΩ (VGS = 4.5V)
R
TO-252
D
S
Top View
Drain Connected
to Tab
G
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current G
Pulsed Drain Current C
Avalanche Current C
±20
10
V
A
TC=25°C
TC=100°C
ID
10
IDM
IAR
EAR
30
15
A
Repetitive avalanche energy L=0.1mH C
36
mJ
TC=25°C
Power Dissipation B
TC=100°C
60
PD
W
30
TA=25°C
2.5
PDSM
W
Power Dissipation A
TA=70°C
1.6
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Symbol
Typ
16.7
40
Max
25
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
50
RθJC
1.9
2.5
Alpha & Omega Semiconductor, Ltd.
AOD420
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
V
DS=24V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS= ±20V
100
3
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1
1.8
VGS=4.5V, VDS=5V
40
A
V
GS=10V, ID=10A
21
28
40
42
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
31
mΩ
S
VGS=4.5V, ID=7A
VDS=5V, ID=10A
IS=1A,VGS=0V
32.5
15.6
0.75
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
1
V
Maximum Body-Diode Continuous Current
10
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
710
120
72
850
3.6
pF
pF
pF
Ω
V
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
GS=0V, VDS=0V, f=1MHz
1.1
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
14.4
7
18
nC
nC
nC
nC
ns
Qg(4.5V)
8.4
V
GS=10V, VDS=15V, ID=10A
Qgs
Qgd
tD(on)
tr
2.6
2.7
5.6
2.4
15.6
2.2
13.4
4.4
VGS=10V, VDS=15V, RL=1.5Ω,
GEN=3Ω
ns
R
tD(off)
tf
ns
ns
trr
IF=10A, dI/dt=100A/µs
IF=10A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
21
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's
specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
Rev4: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
40
30
20
10
0
20
16
12
8
10V
7V
5V
VDS=5V
4.5V
4V
125°C
VGS=3.5V
3.0V
25°C
4
0
1.5
2
2.5
3
3.5
4
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
50
45
40
35
30
25
20
15
10
1.8
1.6
1.4
1.2
1
ID=10A
VGS=10V
VGS=4.5V
VGS=10V
VGS=4.5
0.8
0
5
10
15
20
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
60
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
50
40
30
20
10
ID=10A
125°
125°C
25°C
25°C
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10
V
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOD420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
VDS=15V
ID=10A
800
600
400
200
0
8
Ciss
6
4
Coss
Crss
2
0
0
4
8
12
16
0
5
10
15
DS (Volts)
Figure 8: Capacitance Characteristics
20
25
30
Qg (nC)
V
Figure 7: Gate-Charge Characteristics
100.0
10.0
1.0
60
TJ(Max)=150°C
TA=25°C
RDS(ON) limited
50
40
30
20
10
0
1ms
100µs
10ms
0.1s
1s
10s
DC
TJ(Max)=150°C
TA=25°C
0.1
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.1
0.01
PD
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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