AOD4189L [AOS]
Transistor;
| 型号： | AOD4189L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Transistor |
| 文件： | 总5页 (文件大小：208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD4189
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD4189/L uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. With the excellent thermal resistance of the
DPAK package, this device is well suited for high
current load applications.
VDS (V) = -40V
ID = -40A
(VGS = -10V)
RDS(ON) < 22mΩ (VGS = -10V)
RDS(ON) < 29mΩ (VGS = -4.5V)
AOD4189 and AOD4189L are electrically identical.
-RoHS Compliant
-AOD4189L is Halogen Free
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings TC=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
-40
V
VGS
Gate-Source Voltage
Continuous Drain
Current B,H
Pulsed Drain Current C
Avalanche Current C
±20
-40
V
TC=25°C
TC=100°C
ID
-28
A
IDM
IAR
EAR
-50
-35
Repetitive avalanche energy L=0.1mH C
mJ
W
°C
61
TC=25°C
62.5
31
PD
Power Dissipation B
TC=100°C
TA=25°C
2.5
PDSM
Power Dissipation A
TA=70°C
1.6
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
15
41
2
Max
20
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A,G
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A,G
Maximum Junction-to-Case D,F
50
Steady-State
Steady-State
RθJC
2.4
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4189
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-40
V
VDS=-40V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
±100
-3
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=-250µA
-1.7
-50
-1.9
V
GS=-10V, VDS=-5V
GS=-10V, ID=-12A
A
V
18
27
22
33
29
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
mΩ
VGS=-4.5V, ID=-8A
23
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-12A
IS=-1A,VGS=0V
35
S
V
A
-0.74
-1
Maximum Body-Diode Continuous Current
-20
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1870
185
155
4.5
pF
pF
pF
Ω
VGS=0V, VDS=-20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS=0V, VDS=0V, f=1MHz
2.5
6.5
SWITCHING PARAMETERS
Qg (-10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
31.4
7.9
7.6
6.2
10
41
10
nC
Qg (-4.5V)
V
GS=-10V, VDS=-20V,
ID=-12A
Qgs
Qgd
tD(on)
tr
nC
nC
ns
ns
ns
ns
VGS=-10V, VDS=-20V, RL=1.6Ω,
18
R
GEN=3Ω
tD(off)
tf
38
24
trr
IF=-12A, dI/dt=100A/µs
IF=-12A, dI/dt=100A/µs
32
42
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
30
nC
A: The value of RθJA is measured with the device in a still air environment with TA =25°C. The power dissipation PDSM and current rating IDSM
are based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using t ≤300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. The maximum current rating is limited by bond-wires.
Rev0: April 2008
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4189
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
40
30
20
10
0
50
40
30
20
10
0
VDS=-5V
-10V
-4.5V
-6.0V
-4.0V
VGS=-3.5V
125°C
25°C
3.5
0
1
2
3
4
5
1.5
2
2.5
3
4
4.5
-VDS (Volts)
-VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
30
2
28
26
24
22
20
18
16
VGS=-10V
ID=-12A
1.8
1.6
1.4
1.2
1
VGS=-4.5V
VGS=-4.5V
ID=-8A
VGS=-10V
0
10
20
30
40
0.8
-50 -25
0
25 50 75 100 125 150 175 200
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
55
50
45
40
35
30
25
20
15
ID=-12A
10
1
0.1
125°C
125°C
25°C
0.01
25°C
0.001
0.0001
0.00001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
3
4
5
6
7
8
9
10
-VSD (Volts)
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4189
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2800
10
8
VDS=-20V
ID=-12A
2400
2000
1600
1200
800
400
0
Ciss
6
4
Crss
2
Coss
15
0
0
5
10
20
-VDS (Volts)
Figure 8: Capacitance Characteristics
25
30
35
40
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
25
30
35
10000
1000
100
100
TJ(Max)=175°C
TC=25°C
10µs
100µs
RDS(ON)
limited
10
1ms
TJ(Max)=175°C
TC=25°C
10ms
DC
1
10
1
10
100
0.00001 0.0001
0.001
0.01
0.1
1
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
D=Ton/T
J,PK=Tc+PDM.ZθJC.RθJC
RθJC=2.4°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4189
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10
1
70
60
50
40
30
20
10
0
0
25
50
75
CASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
0.01
0.1
1
10
Time in Avalache, tA (s)
Figure 12: Single Pulse Avalanche Capability
100
1000
T
10000
1000
100
10
50
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
1
0
25
50
75
TCASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
1E-04 0.001 0.01 0.1
1
10
100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-
to-Ambient (Note G)
10
1
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
0.1
PD
0.01
Ton
T
Single Pulse
0.001 0.01
0.001
0.00001
0.0001
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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