AOD400 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOD400 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD400
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD400 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOD400 is Pb-free (meets ROHS & Sony
259 specifications). AOD400L is a Green Product
ordering option. AOD400 and AOD400L are
electrically identical.
VDS (V) = 30V
ID = 10 A (VGS = 10V)
RDS(ON) < 30 mΩ (VGS = 10V)
RDS(ON) < 36 mΩ (VGS = 4.5V)
RDS(ON) < 52 mΩ (VGS = 2.5V)
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current G
±12
10
V
A
TC=25°C
TC=100°C
ID
10
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDM
IAR
EAR
40
15
A
30
mJ
TC=25°C
Power Dissipation B
TC=100°C
20
PD
W
10
TA=25°C
2.1
PDSM
W
Power Dissipation A
TA=70°C
1.3
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
17.4
50
Max
30
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
60
Steady-State
Steady-State
RθJC
4
7.5
Alpha & Omega Semiconductor, Ltd.
AOD400
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
V
DS=24V, VGS=0V
0.002
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS= ±12V
100
1.4
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
GS=4.5V, VDS=5V
0.7
40
1.1
V
A
VGS=10V, ID=10A
25
35
30
42
36
52
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
VGS=4.5V, ID=10A
28.5
40.5
21
V
V
GS=2.5V, ID=5A
DS=5V, ID=10A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
IS=1A,VGS=0V
0.77
1
3
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
857
97
1030
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
71
VGS=0V, VDS=0V, f=1MHz
1.4
3.6
12
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
9.7
1.63
3.1
3.5
3.7
25
nC
nC
nC
ns
ns
ns
ns
V
GS=10V, VDS=15V, ID=10A
VGS=10V, VDS=15V, RL=1.5Ω,
RGEN=6Ω
tD(off)
tf
4
trr
IF=10A, dI/dt=100A/µs
IF=10A, dI/dt=100A/µs
20
24
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
13
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 0 : Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
20
16
12
8
10V
3V
VDS=5V
4.5V
2.5V
125°C
25°C
2V
4
VGS=1.5V
0
0
0
0.5
1
1.5
VGS(Volts)
2
2.5
3
0
1
2
3
4
5
V
DS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
60
1.8
1.6
1.4
1.2
1
VGS=10V, 10A
VGS=4.5V, 10A
50
40
30
20
10
0
VGS=2.5V
VGS=4.5V
VGS=2.5V, 5A
VGS=10V
0.8
0
5
10
D (A)
15
20
I
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
90
80
70
60
50
40
30
20
10
0
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=10A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
0.6
SD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
0
2
4
6
8
10
V
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOD400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
1400
1200
1000
800
600
400
200
0
Ciss
VDS=15V
ID=10A
Crss
Coss
0
5
10
15
VDS (Volts)
20
25
30
0
2
4
6
8
10
12
Q
g (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
160
120
80
100.0
10.0
1.0
TJ(Max)=175°C, TA=25°C
10µs
100µs
10ms
DC
TJ(Max)=175°C
TA=25°C
RDS(ON)
limited
1ms
40
0
0.1
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=7.5°C/W
1
PD
0.1
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOD400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
16
14
12
10
8
25
20
15
10
5
L ⋅ ID
tA
=
BV −VDD
6
4
TA=25°C
2
0
0
0
25
50
75
100
125
150
175
0.00001
0.0001
0.001
TCASE (°C)
Time in avalanche, tA (s)
Figure 13: Power De-rating (Note B)
Figure 12: Single Pulse Avalanche capability
50
12
10
8
TA=25°C
40
30
20
10
0
6
4
2
0
0
25
50
75
100
125
150
175
0.001
0.01
0.1
1
10
100
1000
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note B)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.1
0.01
PD
Single Pulse
0.0001
Ton
T
0.001
0.00001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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