AO4914_11 [AOS]
30V Dual N-Channel MOSFET with Schottky Diode; 30V双N沟道MOSFET和肖特基二极管
| 型号： | AO4914_11 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V Dual N-Channel MOSFET with Schottky Diode |
| 文件： | 总9页 (文件大小：655K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4914
30V Dual N-Channel MOSFET with Schottky Diode
General Description
Product Summary
The AO4914 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. The two MOSFETs
make a compact and efficient switch and synchronous
rectifier combination for use in DC-DC converters. A
Schottky diode is co-packaged in parallel with the
synchronous MOSFET to boost efficiency further.
Q1(N-Channel)
VDS= 30V
Q2(N-Channel)
30V
ID= 8A (VGS=10V)
RDS(ON) <20.5mꢀ
8A (VGS=10V)
RDS(ON) <20.5mꢀ (VGS=10V)
RDS(ON) <28mꢀ (VGS=4.5V)
R
DS(ON) <28mꢀ
ESD Protected
ESD Protected
100% UIS Tested
100% UIS Tested
100% Rg Tested
100% Rg Tested
SCHOTTKY
VDS = 30V, IF = 3A, VF<0.5V@1A
SOIC-8
D2
Top View
Bottom View
D1
Top View
K
A
S1/A
G1
D1/K
D1/K
D2
G2
G1
S2
G2
D2
S1
S2
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Max Q1
30
Max Q2
30
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±20
8
±20
8
TA=25°C
TA=70°C
Continuous Drain
Current
ID
A
6.5
6.5
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
IDM
40
40
IAS, IAR
EAS, EAR
19
18
2
19
18
2
A
mJ
TA=25°C
PD
W
°C
Power Dissipation B
TA=70°C
1.3
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Parameter
Symbol
Max Schottky
Units
Reverse Voltage
VDS
30
V
TA=25°C
3
2.2
Continuous Forward
Current
IF
TA=70°C
Pulsed Diode Forward Current C
A
IFM
PD
20
TA=25°C
Power Dissipation B
TA=70°C
2
W
°C
1.28
-55 to 150
Junction and Storage Temperature Range
TJ, TSTG
Rev 11: Mar. 2011
www.aosmd.com
Page 1 of 9
AO4914
Thermal Characteristics - MOSFET
Parameter
Symbol
Typ
Max
Units
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
48
62.5
°C/W
RθJA
Steady-State
Steady-State
74
32
90
40
°C/W
°C/W
RθJL
Thermal Characteristics - Schottky
Parameter
Symbol
Typ
Max
Units
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
48
62.5
°C/W
RθJA
Steady-State
Steady-State
74
32
90
40
°C/W
°C/W
RθJL
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 11: Mar. 2011
www.aosmd.com
Page 2 of 9
AO4914
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250uA, VGS=0V
VR=30V
BVDSS
IDSS
Drain-Source Breakdown Voltage
30
V
0.05
10
Zero Gate Voltage Drain Current (Set
by Schottky leakage)
VR=30V, TJ=125°C
VR=30V, TJ=150°C
VDS=0V,VGS=±16V
VDS=VGS ID=250µA
mA
20
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
10
µA
V
VGS(th)
ID(ON)
1.2
40
1.8
2.4
V
GS=10V, VDS=5V
A
VGS=10V, ID=8A
17
23.5
20.5
30
20.5
29
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=4A
VDS=5V, ID=8A
IS=1A,VGS=0V
28
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.45
0.5
3
V
Maximum Body-Diode + Schottky Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
575
115
50
730
165
82
865
215
120
1.7
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=8A
VGS=10V, VDS=15V, RL=1.8Ω,
0.5
1.1
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
12
6
15
7.5
2.5
3
18
9
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
5
3.5
19
3.5
8
ns
R
GEN=3Ω
tD(off)
tf
ns
ns
trr
IF=8A, dI/dt=500A/µs
IF=8A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
8
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 11: Mar. 2011
www.aosmd.com
Page 3 of 9
AO4914
Q1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
30
25
20
15
10
5
10V
VDS=5V
4V
5V
3.5V
3V
125°C
25°C
VGS=2.5V
4
0
0
0
1
2
3
5
1
1.5
2
2.5
VGS(Volts)
3
3.5
4
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
30
1.6
1.4
1.2
1
VGS=10V
ID=8A
25
20
15
10
VGS=4.5V
VGS=4.5V
ID=4A
VGS=10V
0.8
0
5
10
ID (A)
15
20
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
50
40
30
20
10
1.0E+01
ID=8A
125°C
1.0E+00
40
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
FET+Schottky
25°C
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
VGS (Volts)
VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
Rev 11: Mar. 2011
www.aosmd.com
Page 4 of 9
AO4914
Q1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1500
1200
900
600
300
0
VDS=15V
ID=8A
8
Ciss
6
4
Coss
2
Crss
0
0
5
10
15
20
25
30
0
3
6
9
12
15
VDS (Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100.0
1000
100
10
TA=25°C
10µs
RDS(ON)
limited
10.0
1.0
0.1
0.0
100µs
1ms
10ms
TJ(Max)=150°C
TA=25°C
10s
DC
1
0.00001
0.001
0.1
10
1000
0.01
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
RθJA=90°C/W
PD
0.01
0.001
Single Pulse
0.001
Ton
T
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 11: Mar. 2011
www.aosmd.com
Page 5 of 9
AO4914
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
V
DS=0V, VGS=±16V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
10
2.4
µA
V
VGS(th)
ID(ON)
V
V
V
DS=VGS ID=250µA
GS=10V, VDS=5V
GS=10V, ID=8A
1.2
40
1.8
A
17
23.5
20.5
30
20.5
29
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
V
V
GS=4.5V, ID=4A
DS=5V, ID=8A
28
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
IS=1A,VGS=0V
0.75
1
V
Maximum Body-Diode Continuous Current
2.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
600
77
740
110
82
888
145
115
1.7
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
50
VGS=0V, VDS=0V, f=1MHz
0.5
1.1
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
12
6
15
7.5
2.5
3
18
9
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=15V, ID=8A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
5
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
3.5
19
3.5
ns
tD(off)
tf
ns
ns
trr
IF=8A, dI/dt=500A/µs
IF=8A, dI/dt=500A/µs
6
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
8
10
22
ns
Qrr
14
nC
18
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 11: Mar. 2011
www.aosmd.com
Page 6 of 9
AO4914
Q2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
10V
VDS=5V
4V
25
20
15
10
5
3.5V
3V
25
20
15
10
5
5V
125°C
VGS=2.5V
25°C
0
0
1
1.5
2
2.5
VGS(Volts)
3
3.5
4
0
1
2
3
4
5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
30
25
20
15
10
1.6
1.4
1.2
1
VGS=10V
ID=8A
VGS=4.5V
VGS=4.5V
ID=4A
VGS=10V
0.8
0
5
10
ID (A)
15
20
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
40
1.0E+02
1.0E+01
ID=8A
35
30
25
20
15
10
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS (Volts)
-VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
Rev 11: Mar. 2011
www.aosmd.com
Page 7 of 9
AO4914
Q2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
1000
800
600
400
200
0
VDS=15V
ID=8A
8
Ciss
6
4
Coss
2
Crss
0
0
5
10
15
VDS (Volts)
20
25
30
0
3
6
9
12
15
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
1000
100
10
100.0
10.0
1.0
TA=25°C
10µs
RDS(ON)
100µs
1ms
10ms
DC
0.1
TJ(Max)=150°C
TA=25°C
10s
0.0
1
0.01
0.1
1
10
100
0.00001
0.001
0.1
10
1000
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
RθJA=90°C/W
0.1
0.01
PD
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 11: Mar. 2011
www.aosmd.com
Page 8 of 9
AO4914
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 11: Mar. 2011
www.aosmd.com
Page 9 of 9
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