AO4915 [AOS]
Plastic Encapsulated Device; 塑料封装的器件
| 型号： | AO4915 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Plastic Encapsulated Device |
| 文件： | 总5页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOS Semiconductor
Product Reliability Report
AO4915/AO4915L, rev A
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
495 Mercury Drive
Sunnyvale, CA 94085
U.S.
Tel: (408) 830-9742
www.aosmd.com
Sep 12, 2005
This AOS product reliability report summarizes the qualification result for AO4915.
Accelerated environmental tests are performed on a specific sample size, and then followed
by electrical test at end point. Review of final electrical test result confirms that AO4915
passes AOS quality and reliability requirements. The released product will be categorized by
the process family and be monitored on a quarterly basis for continuously improving the
product quality.
Table of Contents:
I.
Product Description
II.
Package information
III.
IV.
V.
Environmental Stress Test Summary and Result
Reliability Evaluation
Quality Assurance Information
I. Product Description:
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Units
Max Q1
Max Q2
Drain-Source Voltage
VDS
V
Gate-Source Voltage
VGS
ID
V
TA=25°C
Continuous
Drain Current A
TA=70°C
A
Pulsed Drain Current B
IDM
PD
TA=25°C
TA=70°C
Power
W
Dissipation A
Junction and Storage
Temperature Range
TJ, TSTG
°C
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Units
Max Schottky
Drain-Source Voltage
VDS
V
TA=25°C
Continuous
ID
Drain Current A
TA=70°C
A
Pulsed Drain Current B
IDM
PD
TA=25°C
TA=70°C
Power
W
Dissipation A
Junction and Storage
Temperature Range
TJ, TSTG
°C
Thermal Characteristics : n-channel , p-channel and schottky
Parameter
Symbol Device
Typ
48
Max
62.5
110
40
Units
Maximum Junction-
to-Ambient
Maximum Junction- Steady-
to-Ambient State
Maximum Junction- Steady-
to-Lead
Maximum Junction-
to-Ambient
Maximum Junction- Steady-
to-Ambient State
Maximum Junction- Steady-
to-Lead
Maximum Junction-
to-Ambient
t ≤ 10s
n-ch
RθJA
°C/W
n-ch
74
n-ch
p-ch
35
RθJL
RθJA
State
t ≤ 10s
48
62.5
110
40
°C/W
°C/W
p-ch
74
p-ch
35
RθJL
RθJA
State
t ≤ 10s
schottky
schottky
schottky
47.5
71
62.5
110
40
Maximum Junction- Steady-
to-Ambient State
Maximum Junction- Steady-
to-Lead State
32
RθJL
II. Package Information:
AO4915
Standard sub-micron
AO4915 (Green Compound)
Standard sub-micron
Process
low voltage P channel process low voltage P channel process
Package Type
Lead Frame
Die Attach
8 lead SOIC
Copper with Solder Plate
Silver epoxy
8 lead SOIC
Copper with Solder Plate
Silver epoxy
Bond wire
Mold Material
Filler % (Spherical/Flake) 90/10
2 mils Au wire
Epoxy resin with silica filler
2 mils Au wire
Epoxy resin with silica filler
100/0
Flammability Rating
UL-94 V-0
UL-94 V-0
Backside Metallization Ti / Ni / Ag
Ti / Ni / Ag
Moisture Level
Up to Level 1 *
Up to Level 1*
Note * based on info provided by assembler and mold compound supplier
III. Result of Reliability Stress for AO4915 (Standard) & AO4915L (Green)
Test Item
Test Condition
Time Point
Lot Attribution
Total Sample
size
Number of
Failures
Solder Reflow
Precondition
Normal: 1hr PCT+3
cycle IR reflow@240℃
(260℃ for Green)
0hr
Normal: 81 lots
Green: 23 lots
14410 pcs
0
(Note B**)
HTGB
Temp = 150 C,
Vgs=100% of Vgsmax
168 / 500
hrs
246 pcs
0
1000 hrs
(Note A*)
77+5 pcs / lot
HTRB
Temp = 150 C, Vds=80%
of Vdsmax
168 / 500
hrs
246 pcs
0
0
0
0
(Note A*)
77+5 pcs / lot
3740 pcs
1000 hrs
100 hrs
HAST
130 +/- 2 C, 85%, 33.3
psi, Vgs = 80% of Vgs
max
Normal: 52 lots
Green: 16 lots
50+5 pcs / lot
4950 pcs
(Note B**)
Normal: 70 lots
Green: 20 lots
Pressure Pot
121 C, 15+/-1 PSIG,
RH=100%
96 hrs
50+5 pcs / lot
5720 pcs
(Note B**)
Normal: 81 lots
Green: 23 lots
Temperature
Cycle
-65 to 150 deg C, air to
air, 0.5hr per cycle
250 / 500
cycles
50+5 pcs / lot
(Note B**)
DPA
Internal Vision
Cross-section
X-ray
NA
NA
5
5
5
5
5
5
0
CSAM
5
5
0
0
Bond Integrity
Room Temp
150C bake
150C bake
0hr
250hr
500hr
40
40
40
40 wires
40 wires
40 wires
Solderability
230C
5 sec
15
15 leads
0
Note A: The HTGB and HTRB reliability data presents total of available AO4915 and
AO4915L burn-in data up to the published date.
Note B: The pressure pot, temperature cycle and HAST reliability data for AO4915L comes
from the AOS generic green compound package qualification data.
IV. Reliability Evaluation
FIT rate (per billion):
MTTF = years
500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years of lifetime at
55 deg C operating conditions (by applying the Arrhenius equation with an activation energy
of 0.7eV and 60% of upper confidence level on the failure rate calculation). AOS reliability
group also routinely monitors the product reliability up to 1000 hr at and performs the
necessary failure analysis on the units failed for reliability test(s).
The presentation of FIT rate for the individual product reliability is restricted by the actual
burn-in sample size of the selected product (AO4915). Failure Rate Determination is based
on JEDEC Standard JESD 85. FIT means one failure per billion hours.
Failure Rate = Chi2 x 109
/ / [2 (164) (168) (258)] =
[2 (N) (H) (Af)] = 1.83 x 109
MTBF = 109 / FIT = x 107hrs = years
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55C)
Acceleration Factor [Af] = Exp [Ea / k ( 1/Tj u – 1/Tj s )]
Acceleration Factor ratio list:
55 deg C
70 deg C
85 deg C
32
100 deg C
13
115 deg C
5.64
130 deg C
2.59
150 deg C
1
Af
258
87
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u = The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltznan’s constant, 8.617164 X 10E-5V / K
V. Quality Assurance Information
Acceptable Quality Level for outgoing inspection: 0.1% for electrical and visual.
Guaranteed Outgoing Defect Rate: < 25 ppm
Quality Sample Plan: conform to Mil-Std-105D
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