AO4612_10 [AOS]
60V Complementary Enhancement Mode Field Effect Transistor; 60V互补增强型场效应晶体管
| 型号： | AO4612_10 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 60V Complementary Enhancement Mode Field Effect Transistor |
| 文件： | 总9页 (文件大小：482K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4612
60V Complementary Enhancement Mode Field Effect Transistor
General Description
Features
n-channel
p-channel
-60V
-3.2A (VGS = -10V)
The AO4612 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate
charge. The complementary MOSFETs may be
used in H-bridge, Inverters and other applications.
V
DS (V) = 60V
ID = 4.5A (VGS=10V)
RDS(ON)
RDS(ON)
< 56mΩ (VGS=10V)
< 77mΩ (VGS=4.5V)
< 105mΩ (VGS = -10V)
< 135mΩ (VGS = -4.5V)
100% Rg tested
SOIC-8
D1
S1
D2
S2
Top View
Bottom View
1
2
3
4
8
7
6
5
S2
G2
S1
G1
D2
D2
D1
D1
G2
G1
SOIC-8
n-channel
p-channel
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Max p-channel
Units
VDS
Drain-Source Voltage
60
-60
±20
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±20
4.5
V
A
TA=25°C
TA=70°C
-3.2
ID
3.6
-2.6
Pulsed Drain Current B
IDM
20
-20
TA=25°C
TA=70°C
2
2
PD
W
Power Dissipation
1.28
-55 to 150
1.28
-55 to 150
TJ, TSTG
Junction and Storage Temperature Range
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
48
Max
62.5
90
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
RθJL
Steady-State
Steady-State
74
35
40
Alpha & Omega Semiconductor, Ltd.
AO4612
N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
60
V
VDS=48V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=4.5A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
3
nA
V
VGS(th)
ID(ON)
1
2.1
20
A
46
79
56
77
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=3A
64
mΩ
S
VDS=5V, ID=4.5A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
11
0.74
1
3
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
450
60
540
2
pF
pF
pF
Ω
VGS=0V, VDS=30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
25
VGS=0V, VDS=0V, f=1MHz
1.65
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
8.5
4.3
1.6
2.2
4.7
2.3
15.7
1.9
27.5
32
10.5
5.5
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=30V, ID=4.5A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
7
4.5
24
4
VGS=10V, VDS=30V, RL=6.7Ω,
RGEN=3Ω
ns
tD(off)
tf
ns
ns
trr
IF=4.5A, dI/dt=100A/µs
IF=4.5A, dI/dt=100A/µs
35
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in
any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
provides a single pulse rating. Rev3: Oct 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
20
15
10
5
15
10
5
10V
VDS=5V
5.0V
4.5V
4.0V
125°C
25°C
VGS=3.5V
0
0
0
1
2
3
4
5
2
2.5
3
3.5
VGS(Volts)
4
4.5
5
VDS (Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
100
90
80
70
60
50
40
30
20
2
VGS=10V
ID=4.5A
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=4.5V
ID=3.0A
VGS=10V
0.8
0
5
10
15
20
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
140
120
100
80
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=4.5A
125°C
25°C
125°C
25°C
60
40
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
VGS (Volts)
VSD (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10
8
800
600
400
200
0
VDS=30V
ID= 4.5A
Ciss
6
4
Coss
2
Crss
0
0
10
0
10
20
30
40
50
60
Qg (nC)
Figure 7: Gate-Charge Characteristics
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
30
20
10
0
1ms
10ms
0.1s
0.1
TJ(Max)=150°C
TA=25°C
DC
1s
10s
0.0
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=62.5°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.01
0.00001
0.0001
0.001
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
1
10
100
1000
Alpha & Omega Semiconductor, Ltd.
AO4612
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
AO4612
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-60
V
VDS=-48V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS=±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-3.2A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-3
nA
V
VGS(th)
ID(ON)
-1
-2.1
-20
A
84
145
106
9
105
135
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-2.8A
VDS=-5V, ID=-3.2A
IS=-1A,VGS=0V
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
-0.73
-1
-3
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
930
85
1120
9
pF
pF
pF
Ω
V
V
GS=0V, VDS=-30V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
35
7.2
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
16
8
20
10
nC
nC
nC
nC
ns
VGS=-10V, VDS=-30V, ID=-3.2A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
2.5
3.2
8
12
7.5
48
15
35
VGS=-10V, VDS=-30V, RL=9.4Ω,
RGEN=3Ω
3.8
31.5
7.5
27
ns
tD(off)
tf
ns
ns
trr
IF=-3.2A, dI/dt=100A/µs
IF=-3.2A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
32
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
valueinanyagivenapplicationdependsontheuser'sspecificboarddesign.Thecurrentratingisbasedonthet≤10sthermalresistance rating.
B:Repetitiverating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
30
25
20
15
10
5
20
15
10
5
VDS=-5V
-10V
-4.5V
-3.5V
-4.0V
125°C
VGS=-3.0V
25°C
0
0
0
1
2
3
4
5
1
1.5
2
2.5
-VGS(Volts)
3
3.5
4
-VDS (Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
130
2
1.8
1.6
1.4
1.2
1
ID=-3.2A
120
110
100
90
VGS=-4.5V
VGS=-10V
VGS=-4.5V
ID=-2.8A
VGS=-10V
80
0.8
70
0
25
50
75
100
125
150
175
0
2
4
6
8
10
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
200
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
180
160
140
120
100
80
ID=-3.2A
125°C
125°C
25°C
25°C
60
2
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
Alpha & Omega Semiconductor, Ltd.
AO4612
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
1400
1200
1000
800
600
400
200
0
10
8
VDS=-30V
ID=-3.2A
Ciss
6
4
Coss
Crss
2
0
0
4
8
12
16
20
0
10
20
30
40
50
60
-VDS (Volts)
Figure 8: Capacitance Characteristics
-Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
10.0
1.0
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
100µs
1ms
10ms
0.1s
0.1
10s
1s
TJ(Max)=150°C
TA=25°C
DC
0.0
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO4612
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDCC
Qgs
Qgd
+
Vds
VDCC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
BVDSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
trr
Vds -
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Ig
Alpha & Omega Semiconductor, Ltd.
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