AO4613_10 [AOS]
30V Dual P N-Channel MOSFET; 双路30V P N沟道MOSFET
| 型号： | AO4613_10 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V Dual P N-Channel MOSFET |
| 文件： | 总7页 (文件大小：219K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4613
30V Dual P + N-Channel MOSFET
General Description
Product Summary
The AO4613 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low
gate charge. The complementary MOSFETs may
be used to form a level shifted high side switch,
and for a host of other applications.
N-Channel
P-Channel
-30V
-6.1A (VGS=10V)
VDS (V) = 30V
ID = 7.2A (VGS=10V)
RDS(ON)
RDS(ON)
< 24mΩ (VGS=10V)
< 40mΩ (VGS=4.5V)
< 37mΩ (VGS = -10V)
< 60mΩ (VGS = -4.5V)
ESD Protected
100% UIS Tested
100% Rg Tested
SOIC-8
D2
D1
Top View
Bottom View
Top View
S2
D2
D2
D1
D1
G2
S1
G1
G2
G1
S2
S1
n-channel
Pin1
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Max p-channel
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
30
±20
7.2
-30
±20
V
V
VGS
TA=25°C
TA=70°C
-6.1
-5.1
-30
Continuous Drain
Current A
Pulsed Drain Current B
ID
A
6.1
IDM
30
TA=25°C
TA=70°C
2
2
PD
W
Power Dissipation
1.44
15
1.44
20
Avalanche Current B
IAR
A
mJ
°C
Repetitive avalanche energy 0.1mH B
EAR
11
20
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
-55 to 150
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Typ
n-ch
n-ch
n-ch
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
55
62.5
110
50
RθJA
RθJL
RθJA
RθJL
Maximum Junction-to-Ambient A
Steady-State
92
37
Maximum Junction-to-Lead C
Steady-State
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
p-ch
p-ch
p-ch
48
84
37
62.5
110
50
°C/W
°C/W
°C/W
Steady-State
Maximum Junction-to-Lead C
Steady-State
Alpha & Omega Semiconductor, Ltd.
AO4613
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
V
DS=24V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS=±12V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=7.2A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
10
3
µA
V
VGS(th)
ID(ON)
1
2
20
A
20
29
24
35
40
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=4A
VDS=5V, ID=7.2A
IS=1A
30
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
10
18
0.77
1
3
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
522
110
75
630
3
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=7.2A
VGS=10V, VDS=15V, RL=2.1Ω,
2.1
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
11
5.3
1.9
4
15
7
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
4.7
4.9
16.2
3.5
15.7
7.9
7
10
22
7
ns
RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF=7.2A, dI/dt=100A/µs
IF=7.2A, dI/dt=100A/µs
20
10
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. RθJL and RθJC are equivalent terms referring to
thermal resistance from junction to drain lead.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4613
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
VDS=-24V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS=±12V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-6.1A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
10
-3
µA
V
VGS(th)
ID(ON)
-1
-1.7
30
A
28
39
37
48
60
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
V
GS=-4.5V, ID=-4A
45
mΩ
S
VDS=-5V, ID=-6.1A
IS=-1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
12.5
-0.77
-1
3
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1040
179
134
5
1250
10
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
16.8
8.7
3.4
5
22
12
nC
nC
nC
nC
ns
V
GS=-10V, VDS=-15V, ID=-6.1A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
9
12
11
30
20
27
18
VGS=-10V, VDS=-15V, RL=2.5Ω,
GEN=3Ω
5.7
22.7
10.2
21.7
13.6
ns
R
tD(off)
tf
ns
ns
trr
IF=-6.1A, dI/dt=100A/µs
IF=-6.1A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R is the sum of the thermal impedence from junction to lead R
and lead to ambient. R
and RθJC are equivalent terms referring to
θJL
θJA θJL
thermal resistance from junction to drain lead.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4613
N-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
20
16
12
8
5V
10V
4.5V
4V
VDS=5V
3.5V
125°C
4
VGS=3V
25°C
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
1
2
3
4
5
VGS (Volts)
V
DS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
40
35
30
25
20
15
10
1.6
1.5
1.4
1.3
1.2
1.1
1
VGS=10V
ID=7.2A
VGS=4.5V
VGS=4.5V
ID=4A
VGS=10V
0.9
0.8
0
25
50
75
100 125 150 175
0
5
10
15
20
Temperature ( °C)
ID (Amps)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
70
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=7.2A
60
50
40
30
20
10
125°C
125°C
25°C
25°C
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body diode characteristics
0.6
0.8
1.0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4613
N-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
f=1MHz
VGS=0V
900
800
700
600
500
400
300
200
100
0
VDS=15V
ID=7.2A
8
6
4
2
0
Ciss
Coss
Crss
0
5
10
15
20
25
30
0
2
4
6
8
10
12
Qg (nC)
V
DS (Volts)
Figure 7: Gate-Charge characteristics
Figure 8: Capacitance Characteristics
100
10
1
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
100µs
1ms
10µs
10ms
0.1s
1s
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
1
0.1
PD
Ton
10
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO4613
P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
30
25
20
15
10
5
-10V
VDS=-5V
-4.5V
-6V
-5V
-4V
-3.5V
VGS=-3V
125°C
2
25°C
-2.5V
0
0
0
1
2
3
4
5
0
1
3
4
5
6
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
90
1.6
1.4
1.2
1
80
70
60
50
40
30
20
VGS=-10V
ID=-6.1A
VGS=-4.5V
ID=-4
VGS=-4.5V
VGS=-10V
0.8
0
25
50
75
100
125
150
175
0
5
10
15
20
25
Temperature (°C)
-ID (A)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
90
80
70
60
50
40
30
20
10
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
ID=-6.1A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4613
P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
1250
1000
750
500
250
0
10
8
VDS=-15V
ID=-6.1A
Ciss
6
4
Coss
Crss
2
0
0
4
8
12
-Qg (nC)
16
20
0
5
10
15
-VDS (Volts)
20
25
30
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
30
20
10
0
TJ(Max)=150°C, T A=25°C
TJ(Max)=150°C
TA=25°C
10µs
100µs
RDS(ON)
limited
0.1s
1ms
10ms
1s
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
1
0.1
PD
Ton
10
Single Pulse
0.01
T
0.01
0.00001
0.0001
0.001
0.1
1
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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