AO4613 [FREESCALE]
30V Dual P N-Channel MOSFET; 双路30V P N沟道MOSFET
| 型号： | AO4613 |
| 厂家： | 
Freescale |
| 描述： | 30V Dual P N-Channel MOSFET |
| 文件： | 总7页 (文件大小：566K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4613
30V Dual P + N-Channel MOSFET
General Description
The AO4613 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low
be used to form a level shifted high side switch,
gate charge. The complementary MOSFETs may
and for a host of other applications.
Features
N-Channel
P-Channel
-30V
-6.1A (VGS=10V)
VDS (V) = 30V
ID = 7.2A (VGS=10V)
RDS(ON)
RDS(ON)
< 24mΩ (VGS=10V)
< 40mΩ (VGS=4.5V)
< 37mΩ (VGS = -10V)
< 60mΩ (VGS = -4.5V)
SOIC-8
D2
D1
Top View
S2
D2
D2
D1
D1
G2
S1
G1
G2
G1
S2
S1
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Max p-channel
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
30
±20
7.2
-30
V
V
VGS
±20
-6.1
TA=25°C
TA=70°C
Continuous Drain
Current A
Pulsed Drain Current B
ID
A
6.1
-5.1
IDM
30
-30
TA=25°C
TA=70°C
2
2
PD
W
Power Dissipation
1.44
15
1.44
20
Avalanche Current B
IAR
A
mJ
°C
Repetitive avalanche energy 0.1mH B
EAR
11
20
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
-55 to 150
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Typ
n-ch
n-ch
n-ch
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
55
92
37
62.5
RθJA
RθJL
RθJA
RθJL
Maximum Junction-to-Ambient A
Steady-State
110
50
Maximum Junction-to-Lead C
Steady-State
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
p-ch
p-ch
p-ch
48
84
37
62.5
110
50
°C/W
°C/W
°C/W
Steady-State
Maximum Junction-to-Lead C
Steady-State
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AO4613
30V Dual P + N-Channel MOSFET
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
V
DS=24V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS=±12V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=7.2A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
10
3
µA
V
VGS(th)
ID(ON)
1
2
20
A
20
29
24
35
40
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=4A
VDS=5V, ID=7.2A
IS=1A
30
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
10
18
0.77
1
3
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
522
110
75
630
3
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=7.2A
VGS=10V, VDS=15V, RL=2.1Ω,
2.1
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
11
5.3
1.9
4
15
7
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
4.7
4.9
16.2
3.5
15.7
7.9
7
10
22
7
ns
RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF=7.2A, dI/dt=100A/µs
IF=7.2A, dI/dt=100A/µs
20
10
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. RθJL and RθJC are equivalent terms referring to
thermal resistance from junction to drain lead.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
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AO4613
30V Dual P + N-Channel MOSFET
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
VDS=-24V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS=±12V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-6.1A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
10
-3
µA
V
VGS(th)
ID(ON)
-1
-1.7
30
A
28
39
37
48
60
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
V
GS=-4.5V, ID=-4A
45
mΩ
S
VDS=-5V, ID=-6.1A
IS=-1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
12.5
-0.77
-1
3
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1040
179
134
5
1250
10
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
16.8
8.7
3.4
5
22
12
nC
nC
nC
nC
ns
V
GS=-10V, VDS=-15V, ID=-6.1A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
9
12
11
30
20
27
18
VGS=-10V, VDS=-15V, RL=2.5Ω,
GEN=3Ω
5.7
22.7
10.2
21.7
13.6
ns
R
tD(off)
tf
ns
ns
trr
IF=-6.1A, dI/dt=100A/µs
IF=-6.1A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R is the sum of the thermal impedence from junction to lead R
and lead to ambient. R
and RθJC are equivalent terms referring to
θJL
θJA θJL
thermal resistance from junction to drain lead.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
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AO4613
30V Dual P + N-Channel MOSFET
N-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
20
16
12
8
5V
10V
4.5V
4V
VDS=5V
3.5V
125°C
4
VGS=3V
25°C
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
1
2
3
4
5
VGS (Volts)
V
DS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
40
35
30
25
20
15
10
1.6
1.5
1.4
1.3
1.2
1.1
1
VGS=10V
ID=7.2A
VGS=4.5V
VGS=4.5V
ID=4A
VGS=10V
0.9
0.8
0
25
50
75
100 125 150 175
0
5
10
15
20
Temperature ( °C)
ID (Amps)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
70
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=7.2A
60
50
40
30
20
10
125°C
125°C
25°C
25°C
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body diode characteristics
0.6
0.8
1.0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
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AO4613
30V Dual P + N-Channel MOSFET
N-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
900
800
700
600
500
400
300
200
100
0
10
8
f=1MHz
VGS=0V
VDS=15V
ID=7.2A
Ciss
6
4
2
Coss
Crss
0
0
5
10
15
20
25
30
0
2
4
6
8
10
12
Qg (nC)
V
DS (Volts)
Figure 7: Gate-Charge characteristics
Figure 8: Capacitance Characteristics
100
10
1
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
100µs
1ms
10µs
10ms
0.1s
1s
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
1
0.1
PD
Ton
10
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
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AO4613
30V Dual P + N-Channel MOSFET
P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
30
25
20
15
10
5
-10V
VDS=-5V
-4.5V
-6V
-5V
-4V
-3.5V
VGS=-3V
125°C
2
25°C
-2.5V
0
0
0
1
2
3
4
5
0
1
3
4
5
6
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
90
1.6
1.4
1.2
1
80
70
60
50
40
30
20
VGS=-10V
ID=-6.1A
VGS=-4.5V
ID=-4
VGS=-4.5V
VGS=-10V
0.8
0
25
50
75
100
125
150
175
0
5
10
15
20
25
Temperature (°C)
-ID (A)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
90
80
70
60
50
40
30
20
10
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
ID=-6.1A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
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AO4613
30V Dual P + N-Channel MOSFET
P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
1250
1000
750
500
250
0
10
8
VDS=-15V
ID=-6.1A
Ciss
6
4
Coss
Crss
2
0
0
4
8
12
-Qg (nC)
16
20
0
5
10
15
-VDS (Volts)
20
25
30
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
30
20
10
0
TJ(Max)=150°C, T A=25°C
TJ(Max)=150°C
TA=25°C
10µs
100µs
RDS(ON)
limited
0.1s
1ms
10ms
1s
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
1
0.1
PD
Ton
10
Single Pulse
0.01
T
0.01
0.00001
0.0001
0.001
0.1
1
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
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