AO4404L [AOS]
Transistor;
| 型号： | AO4404L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4404
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4404/L uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be used
to bypass the source inductance. AO4404 and
AO4404L are electrically identical.
VDS (V) = 30V
ID = 8.5A (VGS = 10V)
R
DS(ON) < 24mΩ (VGS = 10V)
RDS(ON) < 30mΩ (VGS = 4.5V)
DS(ON) < 48mΩ (VGS = 2.5V)
R
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
-RoHS Compliant
-AO4404L is Halogen Free
D
S
S
S
S
G
D
D
D
D
G
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current AF
±12
V
A
TA=25°C
TA=70°C
8.5
ID
7.1
Pulsed Drain Current B
IDM
60
TA=25°C
TA=70°C
3
2.1
PD
W
Power Dissipation
Avalanche Current B
IAR
15
A
Repetitive avalanche energy 0.3mH B
EAR
34
mJ
°C
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
31
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient AF
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
59
75
Steady-State
Steady-State
RθJL
16
24
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4404
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=30V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
V
V
V
DS=0V, VGS= ±12V
DS=VGS ID=250µA
GS=4.5V, VDS=5V
GS=10V, ID=8.5A
100
1.4
nA
V
VGS(th)
ID(ON)
0.7
40
1
A
20.5
30
24
36
30
48
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
VGS=4.5V, ID=8.5A
25
VGS=2.5V, ID=5A
VDS=5V, ID=5A
IS=1A,VGS=0V
40
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
10
16
S
V
A
0.71
1
Maximum Body-Diode Continuous Current
4.3
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
857
97
1050
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
71
100
2
VGS=0V, VDS=0V, f=1MHz
0.7
1.4
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
9.7
1.63
3.1
3.3
4.7
26
12
nC
nC
nC
ns
ns
ns
ns
V
GS=4.5V, VDS=15V, ID=8.5A
5
7
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=6Ω
tD(off)
tf
39
6.2
20
12
4.1
15
trr
IF=5A, dI/dt=100A/µs
IF=5A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
8.6
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T=25°C. The SOA
A
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Rev10:May 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
20
16
12
8
10V
3V
VDS=5V
4.5V
2.5V
125°C
25°C
2V
4
VGS=1.5V
0
0
0
1
2
3
4
5
0
0.5
1
1.5
GS(Volts)
2
2.5
3
V
DS (Volts)
V
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
60
50
40
30
20
10
1.8
1.6
1.4
1.2
1
VGS=2.5V
VGS=4.5V
VGS=10V
VGS=2.5V
VGS=4.5V
VGS=10V
0.8
0
5
10
D (A)
15
20
0
25
50
75
100
125
150
175
I
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
100
90
80
70
60
50
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
ID=5A
125°C
125°C
25°C
1.0E-04
40
G
30
25°C
1.0E-05
20
1.0E-06
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
5
4
3
2
1
0
VDS=15V
ID=8.5A
1200
1000
800
600
400
200
0
Ciss
Crss
Coss
0
2
4
6
8
10
12
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
50
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
100µs
40
30
20
10
0
1ms
10ms
0.1s
1s
10s
DC
10
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
P
D
0.1
G
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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