AO3418 [AOS]
30V N-Channel MOSFET; 30V N沟道MOSFET
| 型号： | AO3418 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总5页 (文件大小：454K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO3418
30V N-Channel MOSFET
General Description
Product Summary
VDS
30V
The AO3418 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as
a load switch or in PWM applications.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS =4.5V)
RDS(ON) (at VGS =2.5V)
3.8A
< 55mΩ
< 65mΩ
< 85mΩ
SOT23
D
Top View
Bottom View
D
D
G
G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
30
±12
V
V
VGS
TA=25°C
TA=70°C
3.8
Continuous Drain
Current
ID
A
3.1
Pulsed Drain Current C
IDM
PD
15
TA=25°C
TA=70°C
1.4
W
°C
Power Dissipation B
0.9
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
70
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t
≤ 10s
90
125
80
RθJA
Steady-State
Steady-State
100
63
RθJL
Rev 8: Jan. 2011
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Page 1 of 5
AO3418
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS=±12V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=3.8A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
1.5
nA
V
VGS(th)
ID(ON)
0.5
15
1
A
43
70
55
84
65
85
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=3.5A
47
mΩ
mΩ
S
VGS=2.5V, ID=1A
59
VDS=5V, ID=3.8A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
14
0.75
1
V
Maximum Body-Diode Continuous Current
1.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
185
25
235
35
285
45
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
10
18
25
VGS=0V, VDS=0V, f=1MHz
2.1
4.3
6.5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
10
4.7
12
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=15V, ID=3.8A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
0.95
1.6
3.5
VGS=10V, VDS=15V, RL=3.95Ω,
RGEN=3Ω
1.5
ns
tD(off)
tf
17.5
2.5
ns
ns
trr
IF=3.8A, dI/dt=100A/µs
IF=3.8A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
8.5
2.6
11
ns
Qrr
nC
3.5
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 8: Jan. 2011
www.aosmd.com
Page 2 of 5
AO3418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10
8
10V
VDS=5V
3V
4.5V
2.5V
6
125°C
4
6
VGS=2.0V
25°C
2
3
0
0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
80
70
60
50
40
30
1.8
VGS=2.5V
1.6
1.4
1.2
1
VGS=4.5V
ID=3.5A
VGS=10V
VGS=4.5V
ID=3.8A
VGS=2.5V
ID=1A
VGS=10V
0.8
0
25
50
75
100
125
150
175
0
2
4
6
8
10
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
120
100
80
1.0E+02
1.0E+01
ID=3.8A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
60
25°C
40
25°C
20
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 8: Jan. 2011
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Page 3 of 5
AO3418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
400
VDS=15V
ID=3.8A
350
300
250
200
150
100
50
8
6
Ciss
4
Coss
2
Crss
0
0
0
2
4
6
8
10
12
0
5
10
15
20
25
30
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
10000
1000
100
10
100.0
10.0
1.0
TA=25°C
RDS(ON)
limited
10µs
100µs
1ms
10ms
0.1
TJ(Max)=150°C
TA=25°C
10s
DC
1
0.0
0.00001
0.001
0.1
10
1000
0.01
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=125°C/W
0.1
0.01
PD
Single Pulse
0.001
Ton
T
0.001
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 8: Jan. 2011
www.aosmd.com
Page 4 of 5
AO3418
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Q
Qgd
Vds
VDC
-
-
DUT
Vgs
Igg
C
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
trr
Vds -
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Ig
Rev 8: Jan. 2011
www.aosmd.com
Page 5 of 5
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