AO3419 [AOS]
20V P-Channel MOSFET; 20V P沟道MOSFET
| 型号： | AO3419 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 20V P-Channel MOSFET |
| 文件： | 总5页 (文件大小：317K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO3419
20V P-Channel MOSFET
General Description
Product Summary
VDS
-20V
The AO3419 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as
a load switch applications.
ID (at VGS=-10V)
RDS(ON) (at VGS= -10V)
RDS(ON) (at VGS= -4.5V)
RDS(ON) (at VGS= -2.5V)
-3.5A
< 85mΩ
< 102mΩ
< 140mΩ
Typical ESD protection
HBM Class 2
SOT23
Top View
Bottom View
D
D
D
G
G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±12
-3.5
V
A
TA=25°C
TA=70°C
Continuous Drain
Current
ID
-2.8
Pulsed Drain Current C
IDM
PD
-17
TA=25°C
TA=70°C
1.4
W
°C
Power Dissipation B
0.9
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
65
Max
90
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t
≤ 10s
RθJA
Steady-State
Steady-State
85
125
60
RθJL
43
Rev 5: Nov 2011
www.aosmd.com
Page 1 of 5
AO3419
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-20
V
VDS=-20V, VGS=0V
-1
µA
-5
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
VDS=0V, VGS= ±12V
VDS=VGS, ID=-250µΑ
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-3.5A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±10
-1.2
µA
V
VGS(th)
ID(ON)
-0.5
-17
-0.85
A
71
99
85
119
102
140
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-3A
85
mΩ
mΩ
mΩ
S
VGS=-2.5V, ID=-1A
112
168
8.6
VGS=-1.8V, ID=-0.5A
VDS=-5V, ID=-3.5A
IS=-1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
-0.76
-1
V
Maximum Body-Diode Continuous Current
-1.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
250
40
325
63
400
85
pF
pF
pF
Ω
VGS=0V, VDS=-10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
22
37
52
VGS=0V, VDS=0V, f=1MHz
11.2
17
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
4.4
nC
nC
nC
ns
ns
ns
ns
3.1
0.6
1.1
11
5.5
22
8
VGS=-4.5V, VDS=-10V, ID=-3.5A
VGS=-10V, VDS=-10V, RL=2.8Ω,
RGEN=3Ω
tD(off)
tf
trr
IF=-3.5A, dI/dt=100A/µs
IF=-3.5A, dI/dt=100A/µs
11
4.3
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 5: Nov 2011
www.aosmd.com
Page 2 of 5
AO3419
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
12
-10V
VDS=-5V
25
20
15
10
5
-4.5V
-3.5V
9
6
3
0
-2.5V
VGS=-2.0V
125°C
25°C
0
0
1
2
3
4
5
0
1
2
3
4
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
170
140
110
80
1.60
1.40
1.20
1.00
0.80
ID=-3.5A, VGS=-10V
ID=-3A, VGS=-4.5V
VGS=-2.5V
VGS=-4.5V
VGS=-10V
ID=-1A, VGS=-2.5V
50
20
0
25
50
75
100
125
150
175
0
2
4
6
8
Temperature (°C)
-ID (A)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
180
150
120
90
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=-3.5A
125°C
25°C
125°C
60
25°C
30
0.0
2.0
4.0
6.0
8.0
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 5: Nov 2011
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Page 3 of 5
AO3419
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
600
450
300
150
0
5
4
3
2
1
0
VDS=-10V
ID=-3.5A
Ciss
Coss
Crss
0
5
10
15
20
0
1
2
3
4
5
-VDS (Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100.0
10.0
1.0
1000
100
10
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
100ms
10s
DC
0.1
TJ(Max)=150°C
TA=25°C
1
0.0
0.00001
0.001
0.1
10
1000
0.01
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=125°C/W
1
0.1
PD
Single Pulse
0.001
Ton
T
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 5: Nov 2011
www.aosmd.com
Page 4 of 5
AO3419
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Rev 5: Nov 2011
www.aosmd.com
Page 5 of 5
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