AO3421E [FREESCALE]
30V P-Channel MOSFET; 30V P沟道MOSFET
| 型号： | AO3421E |
| 厂家： | 
Freescale |
| 描述： | 30V P-Channel MOSFET |
| 文件： | 总5页 (文件大小：274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO3421E
30V P-Channel MOSFET
General Description
technology with a low resistance package to provide
and battery protection applications.
The AO3421E combines advanced trench MOSFET
extremely low R
DS(ON). This device is ideal for load switch
Features
VDS
-30V
-3A
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
< 95mΩ
RDS(ON) (at VGS=-4.5V)
< 160mΩ
Typical ESD protection
HBM Class 2
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
-3
V
A
TA=25°C
TA=70°C
Continuous Drain
Current
ID
-2
Pulsed Drain Current C
IDM
PD
-18
TA=25°C
TA=70°C
1.4
W
°C
Power Dissipation B
0.9
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
70
Max
90
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t
≤ 10s
RθJA
Steady-State
Steady-State
100
63
125
80
RθJL
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AO3421E
30V P-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
VDS=-30V, VGS=0V
-1
µA
-5
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
VDS=0V, VGS=±16V
VDS=VGS，ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-3A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±10
-2.5
µA
V
VGS(th)
ID(ON)
-1.4
-18
-2
A
78
112
120
6
95
135
160
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-2A
mΩ
S
VDS=-5V, ID=-3A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
IS=-1A,VGS=0V
-0.8
-1
V
Maximum Body-Diode Continuous Current
-1.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
215
46.5
27.5
9.5
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-3A
VGS=-10V, VDS=-15V, RL=5Ω,
19
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
4.6
2.2
0.85
1.2
8
8
4
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
4
ns
RGEN=3Ω
tD(off)
tf
13.5
4
ns
ns
trr
IF=-3A, dI/dt=500A/µs
IF=-3A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
9
ns
Qrr
nC
16
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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AO3421E
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
15
10
5
10
-10V
VDS=-5V
-6V
-5V
-7V
8
6
-4.5V
-4V
4
2
0
125°C
-3.5V
25°C
VGS=-3.0V
0
0
1
2
3
4
5
6
0
1
2
-VDS (Volts)
3
4
5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
150
140
130
120
110
100
90
1.8
VGS=-4.5V
1.6
1.4
1.2
1
VGS=-10V
ID=-3A
VGS=-4.5V
VGS=-10V
ID=-2A
80
0.8
70
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
250
230
210
190
170
150
130
110
90
1.0E+01
ID=-3A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
125°C
25°C
25°C
70
50
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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AO3421E
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
300
VDS=-15V
ID=-3A
250
8
6
4
Ciss
200
150
100
Coss
2
0
50
0
Crss
0
1
2
3
4
5
0
5
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
10000
1000
100
10
100.0
10.0
1.0
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
0.1
TJ(Max)=150°C
TA=25°C
10s
DC
1
0.0
0.00001
0.001
0.1
10
1000
0.01
0.1
1
10
100
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
RθJA=125°C/W
0.1
0.01
PD
Single Pulse
0.001
Ton
T
0.001
0.00001
0.0001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
1000
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AO3421E
30V P-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
BVDSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
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