AO3424L [AOS]
Transistor;
| 型号： | AO3424L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO3424
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO3424/L uses advanced trench technology to
provide excellent RDS(ON), very low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. AO3424 and AO3424L are electrically
identical.
VDS (V) = 30V
ID = 2 A
(VGS = 10V)
R
R
R
DS(ON) < 80mΩ (VGS = 10V)
DS(ON) < 95mΩ (VGS = 4.5V)
DS(ON) < 157mΩ (VGS = 2.5V)
-RoHS Compliant
-AO3424L is Halogen Free
TO-236
(SOT-23)
Top View
D
S
G
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current A
30
V
V
VGS
±12
TA=25°CF
TA=70°CF
2
ID
2
A
Pulsed Drain Current B
IDM
8
1.4
TA=25°C
TA=70°C
PD
W
Power Dissipation A
0.9
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
70
100
63
Max
90
125
80
Units
°C/W
°C/W
°C/W
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
Alpha & Omega Semiconductor, Ltd.
AO3424
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
V
DS=24V, VGS=0V
0.001
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=2A
100
1.8
nA
V
VGS(th)
ID(ON)
1
8
1.45
A
67
97
80
116
95
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
VGS=4.5V, ID=2A
76
V
V
GS=2.5V, ID=1A
DS=5V, ID=2A
121
11.7
0.8
157
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
IS=1A,VGS=0V
1
Maximum Body-Diode Continuous Current
1.8
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
226
39
270
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
29
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=2A
1.4
4
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
2.6
1.3
3.2
nC
nC
nC
ns
ns
ns
ns
0.5
2.6
4
5
VGS=10V, VDS=15V, RL=7.5Ω,
R
3.2
GEN=6Ω
tD(off)
tf
14.5
2.1
22
3
trr
IF=2A, dI/dt=100A/µs
IF=2A, dI/dt=100A/µs
10.2
3.8
13
5
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The maximum current rating is limited by bond-wires.
Rev 2 : May 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO3424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
15
12
9
10V
3.5V
4V
VDS=5V
8
3V
6V
6
6
4
VGS=2.5V
125°C
3
2
25°C
0
0
0
1
2
V
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
DS (Volts)
V
GS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
200
175
150
125
100
75
1.8
1.6
1.4
1.2
1
VGS=4.5V
ID=2A
VGS=2.5V
VGS=10V
ID=2A
VGS=4.5V
VGS=2.5
ID=1A
50
VGS=10V
25
0
0.8
0
2
4
6
8
10
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
150
140
130
120
110
100
90
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=2A
125°C
125°C
25°C
80
70
25°C
60
50
0
2
4
6
8
10
0.0
0.2
0.4
0.6
SD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
V
Alpha & Omega Semiconductor, Ltd.
AO3424
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
400
350
300
250
200
150
100
50
5
4
3
2
1
0
VDS=15V
ID=2A
Ciss
Crss
Coss
0
0
1
2
3
0
5
10
15
VDS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
10.0
20
10µs
TJ(Max)=150°C
RDS(ON)
limited
TA=25°C
100µs
15
10
5
1s
1.0
10s
1ms
10ms
DC
TJ(Max)=150°C
TA=25°C
0.1s
0
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
V
DS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
1
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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