AO3422 [FREESCALE]
N-Channel Enhancement Mode Field N-Channel Enhancement Mode Field; N沟道增强型场N沟道增强型场
| 型号： | AO3422 |
| 厂家： | 
Freescale |
| 描述： | N-Channel Enhancement Mode Field N-Channel Enhancement Mode Field |
| 文件： | 总5页 (文件大小：469K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO3422
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO3422 uses advanced trench technology toprovide excellent R
DS(ON) and low gate charge. It offers
operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load switch.
Features
VDS (V) = 55V
ID = 2.1A (VGS = 4.5V)
RDS(ON) < 160mΩ (VGS = 4.5V)
R
DS(ON) < 200mΩ (VGS = 2.5V)
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
55
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±12
2.1
V
A
TA=25°C
TA=70°C
ID
1.7
Pulsed Drain Current B
IDM
10
TA=25°C
TA=70°C
1.25
0.8
PD
W
Power Dissipation
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
75
Max
100
150
60
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
115
48
RθJL
1 / 5
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AO3422
N-Channel Enhancement Mode Field
Effect Transistor
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=10mA, VGS=0V
VDS=44V, VGS=0V
55
V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Source leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±12V
±100
2
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
0.6
10
1.3
VGS=4.5V, VDS=5V
A
VGS=4.5V, ID=2.1A
125
175
157
11
160
210
200
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=2.5V, ID=1.5A
VDS=5V, ID=2.1A
IS=1A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
0.78
1
1
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
214
31
300
pF
pF
pF
Ω
VGS=0V, VDS=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
12.6
1.3
VGS=0V, VDS=0V, f=1MHz
3
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
2.6
0.6
0.8
2.3
2.4
16.5
2
3.3
nC
nC
nC
ns
ns
ns
ns
V
GS=4.5V, VDS=27.5V, ID=2.1A
VGS=10V, VDS=27.5V, RL=12Ω,
RGEN=3Ω
tD(off)
tf
trr
IF=2.1A, dI/dt=100A/µs
IF=2.1A, dI/dt=100A/µs
20
30
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
17
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev2: Sep 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2 / 5
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AO3422
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
8
10
8
10V
3.5V
VDS=5V
6
4
2
0
5V
6
2.5V
4
125°C
VGS=2V
2
25°C
2.25
0
0
1
2
3
4
5
1
1.25
1.5
1.75
2
2.5
VDS (Volts)
VGS(Volts)
Fig 1: On-Region characteristics
Figure 2: Transfer Characteristics
200
180
160
140
120
100
2
1.8
1.6
1.4
1.2
1
VGS=2.5V
VGS=4.5
VGS=2.5V
VGS=4.5V
0.8
0
1
2
3
4
5
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
360
310
260
210
160
110
60
125°C
ID=2.3A
125°C
25°C
25°C
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
VSD (Volts)
V
GS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
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AO3422
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
400
5
4
3
2
1
0
360
320
280
240
200
160
120
80
VDS=27.5V
ID=2.1A
Ciss
Coss
Crss
40
0
0
5
10
15
DS (Volts)
Figure 8: Capacitance Characteristics
20
25
30
0
1
2
3
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
100.0
10.0
1.0
15
TJ(Max)=150°C
TJ(Max)=150°C
TA=25°C
TA=25°C
RDS(ON)
limited
10
5
100µs
0.1s
10ms
1ms
1s
10s
DC
0
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=100°C/W
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
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AO3422
N-Channel Enhancement Mode Field
Effect Transistor
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTest Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
5 / 5
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