AO3423 [AOS]

P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管


型号：	AO3423
厂家：	ALPHA & OMEGA SEMICONDUCTORS
描述：	P-Channel Enhancement Mode Field Effect Transistor P沟道增强型场效应晶体管晶体晶体管场效应晶体管
文件：	总4页 (文件大小：126K)
中文：	中文翻译
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AO3423

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO3423 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a load switch or in PWM

applications. It is ESD protected. Standard Product

AO3423 is Pb-free (meets ROHS & Sony 259

specifications). AO3423L is a Green Product

ordering option. AO3423 and AO3423L are

electrically identical.

V_DS(V) = -20V

I_D= -2 A

(V_GS= -10V)

_DS(ON)< 92mΩ (V_GS= -10V)

_DS(ON)< 118mΩ (V_GS= -4.5V)

_DS(ON)< 166mΩ (V_GS= -2.5V)

ESD Rating: 2000V HBM

TO-236

(SOT-23)

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^A

-20

V_GS

±12

T_A=25°C^F

T_A=70°C^F

-2

I_D

-2

-8

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

1.4

P_D

Power Dissipation ^A

0.9

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

125

Units

°C/W

t ≤ 10s

Steady-State

R_θJA

R_θJL

Alpha & Omega Semiconductor, Ltd.

AO3423

Electrical Characteristics (T_J=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

STATIC PARAMETERS

BV_DSS

Drain-Source Breakdown Voltage

I_D=-250µA, V_GS=0V

-20

_DS=-16V, V_GS=0V

-0.5

-2.5

±1

I_DSS

Zero Gate Voltage Drain Current

µΑ

T_J=55°C

µA

V_DS=0V, V_GS=±10V

V_DS=0V, V_GS=±12V

V_DS=V_GSI_D=-250µA

V_GS=-4.5V, V_DS=-5V

I_GSS

Gate-Body leakage current

±10

-1.4

V_GS(th)

I_D(ON)

Gate Threshold Voltage

On state drain current

-0.7

-8

-0.9

V_GS=-10V, I_D=-2A

mΩ

T_J=125°C

108

118

166

R_DS(ON)

Static Drain-Source On-Resistance

mΩ

_GS=-4.5V, I_D=-2A

V_GS=-2.5V, I_D=-1A

_DS=-5V, I_D=-2A

I_S=-1A,V_GS=0V

128

6.8

g_FS

V_SD

I_S

Forward Transconductance

Diode Forward Voltage

-1

-0.78

Maximum Body-Diode Continuous Current

-1.8

620

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

512

Ω

V_GS=0V, V_DS=-10V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

V_GS=0V, V_DS=0V, f=1MHz

9.2

SWITCHING PARAMETERS

Q_g

Q_gs

Q_gd

t_D(on)

t_r

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

5.5

0.8

1.9

6.6

V_GS=-4.5V, V_DS=-10V, I_D=-2A

V_GS=-10V, V_DS=-10V, R_L=5Ω,

R_GEN=3Ω

6.7

t_D(off)

t_f

13.5

9.8

2.7

t_rr

I_F=-2A, dI/dt=100A/µs

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q_rr

A: The value of R _θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The value

in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R _θJAis the sum of the thermal impedence from junction to lead R_θJLand lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in ²FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The SOA curve

provides a single pulse rating.

F. The maximum current rating is limited by bond-wires.

Rev 0 : Mar 2006

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AO3423

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

-10.0V

-4.0V

V_DS=-5V

-8.0V

-6.0V

-3.5V

-3.0V

-2.5V

125°C

-2.0V

25°C

V_GS=-1.5V

0.5

1.5

2.5

3.5

-V_GS(Volts)

-V_DS(Volts)

Fig 1: On-Region Characteristics

Figure 2: Transfer Characteristics

180

160

140

120

100

1.6

1.4

1.2

1.0

0.8

I_D=-2A, V_GS=-4.5V

I_D=-2A, V_GS=-10V

V_GS=-2.5V

V_GS=-4.5V

I_D=-1A, V_GS=-2.5V

V_GS=-10V

100

125

150

175

-I_D(A)

Temperature (°C)

Figure 4: On-Resistance vs. Junction

Temperature

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

200

1E+01

1E+00

1E-01

1E-02

1E-03

1E-04

1E-05

1E-06

I_D=-2A

180

160

140

120

100

125°C

25°C

0.0

0.2

0.4

0.6

0.8

1.0

1.2

-V_SD(Volts)

-V_GS(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AO3423

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

800

600

400

200

I_D=-2A

C_iss

C_oss

C_rss

-Q_g(nC)

-V_DS(Volts)

Figure 7: Gate-Charge Characteristics

Figure 8: Capacitance Characteristics

10.0

1.0

T_J(Max)=150°C

T_A=25°C

10µs

R_DS(ON)

limited

100µs

1ms

10ms

0.1s

T_J(Max)=150°C

T_A=25°C

10s

0.1

0.001

0.01

0.1

100

1000

0.1

100

Pulse Width (s)

-V_DS(Volts)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note E)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

D=T_on/T

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

T_J,PK=T_A+P_DM.Z_θJA.R_θJA

R_θJA=90°C/W

0.1

P_D

T_on

Single Pulse

0.001

0.01

0.00001

0.0001

0.01

0.1

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

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