AO3420 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AO3420 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO3420
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO3420 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. This device is
suitable for use as a uni-directional or bi-directional
load switch. Standard Product AO3420 is Pb-free
(meets ROHS & Sony 259 specifications). AO3420L
is a Green Product ordering option. AO3420 and
AO3420L are electrically identical.
VDS (V) = 20V
ID = 6 A (VGS = 10V)
RDS(ON) < 24mΩ (VGS = 10V)
RDS(ON) < 27mΩ (VGS = 4.5V)
RDS(ON) < 42mΩ (VGS = 2.5V)
RDS(ON) < 55mΩ (VGS = 1.8V)
TO-236
(SOT-23)
Top View
D
S
G
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±12
V
A
TA=25°C
TA=70°C
6
ID
5
25
Pulsed Drain Current B
IDM
TA=25°C
TA=70°C
1.4
PD
W
Power Dissipation A
0.9
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
70
Max
90
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
100
63
125
80
RθJL
Alpha & Omega Semiconductor, Ltd.
AO3420
Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
20
V
V
DS=16V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±12V
VDS=VGS ID=250uA
100
1
nA
V
VGS(th)
ID(ON)
0.5
25
0.7
V
GS=4.5V, VDS=5V
A
VGS=10V, ID=6A
19
29
24
35
27
42
55
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=5A
VGS=2.5V, ID=4A
VGS=1.8V, ID=2A
VDS=5V, ID=3.8A
IS=1A,VGS=0V
22
mΩ
35
45
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
24
S
V
A
0.75
1
2
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
630
164
137
1.5
pF
pF
pF
Ω
V
V
GS=0V, VDS=10V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
8.8
1
nC
nC
nC
ns
ns
ns
ns
VGS=4.5V, VDS=10V, ID=6A
3.7
5.5
14
VGS=5V, VDS=10V, RL=1.7Ω,
RGEN=6Ω
tD(off)
tf
29
10.2
trr
IF=6A, dI/dt=100A/µs
IF=6A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
15.2
6.3
ns
nC
Qrr
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev0 : July 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO3420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
30
20
10
0
10V
VGS=5V
3V
4V
VGS =2V
15
10
5
VGS =1.5V
125°C
1.0
25°C
0
0
1
2
3
4
5
0.0
0.5
1.5
VGS(Volts)
2.0
2.5
V
DS(Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Regions Characteristics
50
40
30
20
10
1.6
1.4
1.2
1.0
0.8
VGS=1.8V
VGS=2.5V
ID=4A
VGS=2.5V
VGS=4.5V
VGS=4.5V
VGS=10V
ID=6A
ID=5A
VGS=1.8V
ID=2A
VGS=10V
0
2
4
6
8
10
ID (A)
0
25
50
75
100
125
150
175
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
80
70
60
50
40
30
20
10
ID=6A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
V
SD(Volts)
V
GS(Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO3420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
1400
1200
1000
800
600
400
200
0
VDS=10V
ID=6A
Ciss
Coss
Crss
0
5
10
VDS(Volts)
15
20
0
2
4
6
8
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100
10
1
20
15
10
5
TJ(Max)=150°C, TA=25°C
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
10µs
100µs
1ms
DC
10ms
100m
1s
100
0
0.1
0.001
0.01
0.1
1
10
1000
0.1
1
10
100
Pulse Width (s)
V
DS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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