AO3420 [FREESCALE]
20V N-Channel MOSFET; 20V N沟道MOSFET
| 型号： | AO3420 |
| 厂家： | 
Freescale |
| 描述： | 20V N-Channel MOSFET |
| 文件： | 总5页 (文件大小：378K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO3420
20V N-Channel MOSFET
General Description
The AO3420 uses advanced trench technology to provide
excellent RDS(ON) , low gate charge and operation with gate
voltages as low as 1.8V while retaining a 12V VGS(MAX)
or bi-directional load switch.
rating. This device is suitable for use as a uni-directional
Features
VDS
20V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS =4.5V)
RDS(ON) (at VGS=2.5V)
6A
< 24mΩ
< 27mΩ
< 42mΩ
< 55mΩ
RDS(ON) (at VGS=1.8V)
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
20
±12
6
V
V
VGS
TA=25°C
TA=70°C
Continuous Drain
Current
ID
5
A
Pulsed Drain Current C
IDM
PD
30
1.4
TA=25°C
TA=70°C
W
°C
Power Dissipation B
0.9
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
70
Max
90
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t
≤ 10s
RθJA
Steady-State
Steady-State
100
63
125
80
RθJL
1 / 5
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AO3420
20V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
20
V
VDS=20V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
V
DS=0V, VGS= ±12V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
1.1
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=6A
0.4
30
0.75
A
16
23
18
23
31
25
0.7
24
35
27
42
55
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=5A
mΩ
mΩ
mΩ
S
VGS=2.5V, ID=4A
VGS=1.8V, ID=2A
VDS=5V, ID=6A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
1
2
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
420
65
525
95
630
125
105
2.6
pF
pF
pF
Ω
VGS=0V, VDS=10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
45
75
VGS=0V, VDS=0V, f=1MHz
0.8
1.7
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
12.5
6
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=10V, ID=6A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
1
2
3
VGS=10V, VDS=10V, RL=1.7Ω,
7.5
20
6
ns
RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF=6A, dI/dt=100A/µs
IF=6A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
14
6
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2 / 5
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AO3420
20V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
20
10
0
20
10V
3.5V
VDS=5V
15
10
5
2.5V
4.5V
1.8V
125°C
25°C
VGS=3.5V
0
0
0.5
1
1.5
2
2.5
0
1
2
3
4
5
VGS(Volts)
V
DS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
60
1.8
1.6
1.4
1.2
1
55
50
45
40
35
30
25
20
15
10
VGS=4.5V
ID=5A
VGS=2.5V
ID=4A
VGS=1.8V
VGS=2.5V
VGS=1.8V
ID=2A
=10V
VGS
VGS=4.5V
VGS=10V
ID=6A
0.8
0
5
10
15
20
25
30
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
45
40
35
30
25
20
15
1.0E+02
1.0E+01
ID=6A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
0.0
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.8
1.0
1.2
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3 / 5
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AO3420
20V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
VDS=10V
ID=6A
8
800
Ciss
6
4
2
0
600
400
Coss
200
Crss
0
0
5
10
15
0
5
10
DS (Volts)
15
20
Qg (nC)
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
10000
100.0
10.0
1.0
TA=25°C
RDS(ON)
limited
10µs
1000
100
10
100µs
1ms
10ms
10s
0.1
TJ(Max)=150°C
TA=25°C
DC
0.0
1
0.01
0.1
1
10
100
0.00001
0.001
0.1
10
1000
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
1
0.1
PD
0.01
0.001
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.01
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
1
10
100
1000
4 / 5
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AO3420
20V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
trr
Vds -
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Ig
5 / 5
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