AO3403L [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AO3403L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO3403
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO3403 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO3403 is Pb-free
(meets ROHS & Sony 259 specifications). AO3403L
is a Green Product ordering option. AO3403 and
AO3403L are electrically identical.
VDS (V) = -30V
ID = -2.6 A (VGS = -10V)
RDS(ON) < 130mΩ (VGS = -10V)
RDS(ON) < 180mΩ (VGS = -4.5V)
RDS(ON) < 260mΩ (VGS = -2.5V)
D
S
TO-236
(SOT-23)
Top View
G
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
-30
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current A
VGS
±12
TA=25°C
TA=70°C
-2.6
ID
-2.2
A
Pulsed Drain Current B
IDM
-20
TA=25°C
TA=70°C
1.4
PD
W
Power Dissipation A
1
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
70
100
63
Max
90
125
80
Units
°C/W
°C/W
°C/W
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
Alpha & Omega Semiconductor, Ltd.
AO3403
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
VDS=-24V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±12V
±100
-1.4
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=-250µA
-0.6
-10
-1
V
GS=-4.5V, VDS=-5V
GS=-10V, ID=-2.6A
A
V
102
154
128
187
4.5
130
200
180
260
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
VGS=-4.5V, ID=-2A
GS=-2.5V, ID=-1A
V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-2.5A
IS=-1A,VGS=0V
3
S
V
A
-0.85
-1
-2
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
409
55
500
pF
pF
pF
Ω
V
GS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
42
VGS=0V, VDS=0V, f=1MHz
12
16
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
4.4
0.8
1.32
5.3
4.4
31.5
8
5.3
nC
nC
nC
ns
ns
ns
ns
VGS=-4.5V, VDS=-15V, ID=-2.5A
8
9
VGS=-10V, VDS=-15V, RL=6Ω,
RGEN=3Ω
tD(off)
tf
45
16
19
12
trr
IF=-2.5A, dI/dt=100A/µs
IF=-2.5A, dI/dt=100A/µs
15.8
8
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev 5: June 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO3403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
20
15
10
5
-5V
25°C
VDS=-5V
-10V
-4.5V
-4V
VGS=-3.5V
6
125°C
-3V
4
-2.5V
2
-2.0V
4
0
0
0
1
2
3
5
0
0.5
1
1.5
2
2.5
3
3.5
4
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
250
200
150
100
50
1.6
1.4
1.2
1
VGS=-10V
VGS=-4.5V
VGS=-2.5V
VGS=-2.5V
ID=-2A
VGS=-4.5V
VGS=-10V
0.8
0
1
2
3
4
5
6
0
25
50
75
100 125 150 175
-ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
300
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
250
200
150
100
50
125°C
ID=-2A
125°C
25°C
25°C
0
0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO3403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
600
500
400
300
200
100
0
5
4
3
2
1
0
VDS=-15V
ID=-2.5A
Ciss
Coss
Crss
0
1
2
3
4
5
0
5
10
15
-VDS (Volts)
20
25
30
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
TJ(Max)=150°C
TA=25°C
20
15
10
5
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
100µs
1ms
10µs
0.1s
10ms
1s
10s
1
DC
0
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
1
0.1
PD
Ton
T
0.01
Single Pulse
0.00001
0.001
0.01
0.1
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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