AO3404A [FREESCALE]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AO3404A |
| 厂家： | 
Freescale |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO3404A
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO3404A uses advanced trench technology to
device is suitable for use as a load switch or in PWM
allow a Kelvin connection to the source, which may
provide excellent RDS(ON) and low gate charge. This
applications. The source leads are separated to
be used to bypass the source inductance.
Features
VDS (V) = 30V
ID = 5.8A
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
RDS(ON) < 25mΩ
RDS(ON) < 35mΩ
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
30
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±20
TA=25°C
TA=70°C
5.8
Continuous Drain
Current A,F
Pulsed Drain Current B
ID
A
4.9
IDM
64
TA=25°C
TA=70°C
1.4
PD
W
°C
Power Dissipation
0.9
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
65
Max
90
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady-State
Steady-State
85
125
80
RθJL
63
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AO3404A
N-Channel Enhancement Mode Field
Effect Transistor
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
100
2.6
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1.5
64
2.1
VGS=4.5V, VDS=5V
A
VGS=10V, ID=5.8A
18.4
26.2
24.5
22
25
36
35
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=4.8A
VDS=5V, ID=5.8A
IS=1A,VGS=0V
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.75
1
V
Maximum Body-Diode Continuous Current
2.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
373
67
448
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
41
VGS=0V, VDS=0V, f=1MHz
1.8
2.8
11
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
7.1
3.3
1.4
1.7
4.5
2.4
14.8
2.5
10.5
4.5
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=15V, ID=5.8A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
6.5
ns
VGS=10V, VDS=15V, RL=2.6Ω,
RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF=5.8A, dI/dt=100A/µs
IF=5.8A, dI/dt=100A/µs
12.6
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F.The current rating is based on the t≤ 10s thermal resistance rating.
Rev4 May.2012
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2 / 4
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AO3404A
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
15
12
9
VDS=5V
10V
6V
4.5V
125°C
6
25°C
VGS=3.5V
3
0
0
1
2
3
4
5
1.5
2
2.5
3
3.5
4
4.5
VDS (Volts)
Fig 1: On-Region Characteristics
VGS(Volts)
Figure 2: Transfer Characteristics
45
38
31
24
17
10
1.8
1.6
1.4
1.2
1
VGS=10V
Id=5.8A
VGS=4.5V
VGS=4.5V
Id=4.8A
0.8
0.6
VGS=10V
0
5
10
15
20
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction Temperature
60
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=5.8A
50
40
30
20
125°C
125°C
25°C
25°C
10
2
4
6
8
10
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
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AO3404A
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
600
500
10
VDS=15V
ID=5.8A
8
6
4
2
0
Ciss
400
300
Coss
200
100
0
Crss
0
2
4
6
8
0
5
10
15
20
25
30
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
30
20
10
0
10µs
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
100µs
1ms
10ms
0.1s
10s
DC
0.1
TJ(Max)=150°C
TA=25°C
0.0
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=125°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
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