AO3404L [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AO3404L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO3404
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO3404 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device may be used as a load switch or in PWM
applications. Standard Product AO3404 is Pb-free
(meets ROHS & Sony 259 specifications). AO3404L
is a Green Product ordering option. AO3404 and
AO3404L are electrically identical.
VDS (V) = 30V
ID = 5.8A (VGS = 10V)
R
DS(ON) < 28mΩ (VGS = 10V)
DS(ON) < 43mΩ (VGS = 4.5V)
R
TO-236
(SOT-23)
Top View
D
S
G
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±20
V
A
TA=25°C
TA=70°C
5.8
ID
4.9
Pulsed Drain Current B
IDM
20
1.4
TA=25°C
TA=70°C
PD
W
Power Dissipation
1
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
65
Max
90
Units
°C/W
°C/W
°C/W
A
t ≤ 10s
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
RθJA
A
Steady-State
Steady-State
85
125
60
C
RθJL
43
Maximum Junction-to-Lead
Alpha & Omega Semiconductor, Ltd.
AO3404
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=24V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
100
3
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1
1.9
VGS=4.5V, VDS=5V
20
A
VGS=10V, ID=5.8A
22.5
31.3
34.5
14.5
0.76
28
38
43
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=5.0A
VDS=5V, ID=5.8A
IS=1A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
10
S
V
A
1
Maximum Body-Diode Continuous Current
2.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
680
102
77
820
3.6
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
3
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
13.88
6.78
1.8
17
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
8.1
VGS=10V, VDS=15V, ID=5.8A
3.12
4.6
6.5
5.7
30
3.8
ns
VGS=10V, VDS=15V, RL=2.7Ω,
RGEN=3Ω
tD(off)
tf
20.9
5
ns
7.5
ns
trr
IF=5.8A, dI/dt=100A/µs
IF=5.8A, dI/dt=100A/µs
16.1
7.4
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
21
10
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 5 : July 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO3404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
20
16
12
8
10V
6V
5V
4.5V
VDS=5V
4V
3.5V
125°C
4
VGS=3V
25°C
3.5
0
0
0
0.5
1
1.5
2
2.5
3
4
4.5
0
1
2
3
4
5
VGS (Volts)
VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
60
1.6
1.5
1.4
1.3
1.2
1.1
1
VGS=10V
ID=5A
50
40
30
20
10
VGS=4.5V
VGS=4.5V
VGS=10V
0.9
0.8
0
5
10
15
20
0
50
100
150
200
ID (Amps)
Temperature ( °C)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
70
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
60
50
40
30
20
10
ID=5A
125°C
125°C
25°C
0.6
25°C
0.0
0.2
0.4
0.8
1.0
2
4
6
8
10
V
SD (Volts)
VGS (Volts)
Figure 6: Body diode characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO3404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
8
f=1MHz
VGS=0V
VDS=15V
ID=5.8A
900
800
700
600
500
400
300
200
100
0
Ciss
6
4
2
Coss
Crss
0
0
2
4
6
8
10
12
14
0
5
10
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge characteristics
VDS (Volts)
Figure 8: Capacitance Characteristics
100
40
30
20
10
0
TJ(Max)=150°C
TJ(Max)=150°C
TA=25°C
TA=25°C
RDS(ON)
limited
1ms
100µs 10µs
10
1
10ms
0.1s
1s
10s
DC
10
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
T
0.1
PD
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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