AO3405 [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AO3405 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO3405
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO3405 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO3405 is Pb-free
(meets ROHS & Sony 259 specifications). AO3405L
is a Green Product ordering option. AO3405 and
AO3405L are electrically identical.
VDS (V) = -30V
ID = -2.6 A (VGS = -10V)
R
DS(ON) < 130mΩ (VGS = -10V)
DS(ON) < 180mΩ (VGS = -4.5V)
R
D
S
TO-236
(SOT-23)
Top View
G
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±12
-2.6
V
A
TA=25°C
TA=70°C
ID
-2.2
Pulsed Drain Current B
IDM
-30
TA=25°C
TA=70°C
1.4
PD
W
Power Dissipation A
1
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
65
Max
90
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
85
125
60
RθJL
43
Alpha & Omega Semiconductor, Ltd.
AO3405
Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
V
DS=-24V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±12V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
±100
-2.3
nA
V
VGS(th)
ID(ON)
-1.3
-10
-1.8
102
137
A
V
GS=-10V, ID=-2.6A
130
180
mΩ
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
V
GS=-4.5V, ID=-2A
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-2.5A
IS=-1A,VGS=0V
7
11
-0.83
-1
V
Maximum Body-Diode Continuous Current
-2.2
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
481
54
pF
pF
pF
Ω
V
V
GS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
34
GS=0V, VDS=0V, f=1MHz
12
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
1.25
1.75
4.35
8.9
nC
nC
nC
ns
ns
ns
ns
VGS=-4.5V, VDS=-15V, ID=-2.5A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
V
GS=-10V, VDS=-15V, RL=6Ω,
8.8
RGEN=6Ω
tD(off)
tf
Turn-Off DelayTime
23
Turn-Off Fall Time
6.9
trr
IF=-2.5A, dI/dt=100A/µs
IF=-2.5A, dI/dt=100A/µs
26
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
15.6
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev3: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO3405
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
20
15
10
5
VDS=-5V
-10V
-4.5V
6
-4V
-3.5V
VGS=-3V
4
125°C
2
25°C
3.5
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
4
4.5
5
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
200
180
160
140
120
100
80
1.6
1.4
1.2
1
VGS=-10V
VGS=-4.5V
ID=-2A
VGS=-4.5V
VGS=-10V
60
40
0.8
0
1
2
3
4
5
6
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
400
350
300
250
200
150
100
50
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
125°C
ID=-2A
125°C
25°C
25°C
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
-VSD (Volts)
-VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO3405
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
600
400
200
0
5
4
3
2
1
0
VDS=-15V
ID=-2.5A
Ciss
Coss
Crss
0
1
2
3
4
5
0
5
10
15
-VDS (Volts)
20
25
30
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
TJ(Max)=150°C
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
TA=25°C
10µs
RDS(ON)
100µs
limited
1ms
0.1s
10ms
1s
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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