AOB403L [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AOB403L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOB403
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOB403 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance
of the D2-PAK package, this device is well suited for
high current load applications. Standard product
AOB403 is Pb-free (meets ROHS & Sony 259
specifications). AOB403L is a Green Product ordering
option. AOB403 and AOB403L are electrically
identical.
VDS (V) = -60V
ID = -30A (VGS=-10V)
RDS(ON) < 44mΩ (VGS = -10V ) @ 30A
RDS(ON) < 55mΩ (VGS = -4.5V ) @ 20A
TO-263
D2-PAK
D
Top View
Drain Connected to
Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
-60
V
VGS
Gate-Source Voltage
±20
-30
V
A
TC=25°C
Continuous Drain
Current
TC=100°C
ID
-20
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDM
IAR
EAR
-60
-26
A
134
mJ
TC=25°C
Power Dissipation B
TC=100°C
83
PD
W
42
TA=25°C
2.2
PDSM
W
Power Dissipation A
TA=70°C
1.45
-55 to 175
TJ, TSTG
Junction and Storage Temperature Range
°C
Thermal Characteristics
Parameter
Symbol
Typ
10
Max
12
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
45
55
Steady-State
Steady-State
RθJC
1.35
1.8
Alpha & Omega Semiconductor, Ltd.
AOB403
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-60
V
VDS=-48V, VGS=0V
-0.003
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±20V
±100
-3
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=-250µA
-1
-1.9
VGS=-10V, VDS=-5V
-60
A
V
GS=-10V, ID=-30A
36
51
44
62
55
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-20A
43
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-30A
IS=-1A,VGS=0V
50
S
V
A
-0.73
-1
Maximum Body-Diode Continuous Current
-30
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2977 3600
pF
pF
pF
Ω
V
GS=0V, VDS=-30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
241
153
VGS=0V, VDS=0V, f=1MHz
2
2.4
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
44.6
20.8
9.9
10
54
25
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
VGS=-10V, VDS=-30V, ID=-30A
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
13.7
8.3
37
ns
VGS=-10V, VDS=-30V, RL=1Ω,
RGEN=3Ω
tD(off)
tf
ns
9.7
40
ns
trr
IF=-30A, dI/dt=100A/µs
IF=-30A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
48
ns
Qrr
56
nC
A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev1:May2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOB403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
30
25
20
15
10
5
-4.5V
-10V
-4V
VDS=-5V
-6V
-5V
125°C
-3.5V
25°C
VGS=-3V
4
0
0
0
1
2
3
4
5
0
1
2
3
5
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
60
2
VGS=-10V
ID=-30A
50
40
30
20
10
0
VGS=-4.5V
1.8
1.6
1.4
1.2
1
VGS=-4.5V
ID=-20A
VGS=-10V
0.8
0
5
10
15
-ID (A)
20
25
30
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
80
60
40
20
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
ID=-30A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
0.6
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOB403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
4000
3600
3200
2800
2400
2000
1600
1200
800
VDS=-30V
ID=-30A
Ciss
8
6
4
Coss
Crss
2
400
0
0
0
5
10
15
-VDS (Volts)
20
25
30
0
5
10
15
20
25
30
35
40
45
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
1000
800
600
400
200
0
10µs
100µs
TJ(Max)=175°C
TA=25°C
RDS(ON)
limited
1ms
10ms
DC
TJ(Max)=175°C, TA=25°C
0.1
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.8°C/W
1
0.1
PD
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOB403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
100
90
80
70
60
50
40
30
20
10
0
L⋅ ID
tA =
BV −VDD
TA=25°C
10
0
25
50
75
100
125
150
175
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
40
35
30
25
20
15
10
5
90
80
70
60
50
40
30
20
10
0
TA=25°C
0
0
25
50
75
100
125
150
175
0.001
0.01
0.1
1
10
100
1000
TCASE (°C)
Pulse Width (s)
Figure 14: Current De-rating (Note B)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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