AM2305E3R [AITSEMI]
P-CHANNEL ENHANCEMENT MODE POWER MOSFET;
| 型号： | AM2305E3R |
| 厂家： | 
AiT Semiconductor |
| 描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总9页 (文件大小：558K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM2305
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
FEATURES
The AM2305 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in
PWM applications.
VDS = -20V,ID = -4.1A
R
R
DS(ON) <75mΩ@ VGS=-2.5V
DS(ON) < 52mΩ@ VGS=-4.5V
High Power and current handing capability
Surface Mount Package
Available in SOT-23 Package
The AM2305 is available in SOT-23 package.
APPLICATION
ORDERING INFORMATION
PWM applications
Load switch
Package Type
SOT-23
Part Number
AM2305E3R
AM2305E3VR
Power management
P CHANNEL MOSFET
E3
V: Halogen free Package
R: Tape & Reel
Note
AiT provides all RoHS products
Suffix “ V “ means Halogen free Package
Schematic diagram
REV2.0
- NOV 2010 RELEASED, JUN 2016 UPDATED -
- 1 -
AM2305
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PIN DESCRIPTION
Top View
Pin #
Symbol
Function
Gate
1
2
3
G
S
D
Source
Drain
REV2.0
- NOV 2010 RELEASED, JUN 2016 UPDATED -
- 2 -
AM2305
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
VDS, Drain-Source Voltage
-20V
±8V
VGS, Gate-Source Voltage
ID, Drain Current-Continuous
-4.1A
IDM, Drain Current-PulsedNOTE1
-15A
PD, Maximum Power Dissipation
TJ, TSTG, Operating Junction and Storage Temperature Range
1.7W
-55°C ~150°C
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
NOTE1: Repetitive Rating: Pulse width limited by maximum junction temperature.
THERMAL CHARACTERISTICS
Parameter
Symbol
RθJA
Limit
74
Units
°C/W
Thermal Resistance,Junction-to-AmbientNOTE2
NOTE2: Surface Mounted on FR4 Board, t ≤ 10 sec.
REV2.0
- NOV 2010 RELEASED, JUN 2016 UPDATED -
- 3 -
AM2305
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ELECTRICAL CHARACTERISTICS
TA=25℃, unless otherwise noted
Parameter
Symbol
Conditions
Min
Typ.
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics NOTE 3
BVDSS
IDSS
VGS=0V,ID=-250μA
VDS=-20V,VGS=0V
VGS=±8V,VDS=0V
-20
-
-
-
-
V
-
-
-1
μA
nA
IGSS
±100
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-0.45
-0.7
-1.0
V
VGS=-4.5V,ID=-4.1A
VGS=-2.5V,ID=-3.0A
VDS=-5V,ID=-3.5A
-
-
-
45
60
52
75
-
Drain-Source On-State
Resistance
RDS(ON)
gFS
mΩ
Forward Transconductance
Dynamic Characteristics NOTE 4
Input Capacitance
8.5
S
Clss
Coss
Crss
-
-
-
740
290
190
-
-
-
VDS=-4V,VGS=0V,
F=1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Switching Characteristics NOTE 4
Turn-on Delay Time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
12
35
-
-
-
-
-
-
-
VDD=-4V, ID=-3.3A
RL=1.2Ω, VGEN=-4.5V
RG=1Ω
Turn-on Rise Time
ns
Turn-Off Delay Time
30
Turn-Off Fall Time
10
Total Gate Charge
Qg
Qgs
Qgd
7.8
1.2
1.6
VDS=-4V,ID=-4.1A,
VGS=-4.5V
Gate-Source Charge
nC
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage NOTE3
Diode Forward Current NOTE2
VSD
IS
VGS=0V, IS=-1.6A
-
-
-
-
-1.2
1.6
V
A
NOTE2: Surface Mounted on FR4 Board, t ≤ 10 sec.
NOTE3: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
NOTE4: Guaranteed by design, not subject to production
REV2.0
- NOV 2010 RELEASED, JUN 2016 UPDATED -
- 4 -
AM2305
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
TYPICAL PERFORMANCE CHARACTERISTICS
1.
3.
5.
Power Dissipation
2.
4.
6.
Drain Current
Output CHARACTERISTICS
Drain-Source On-Resistance
Transfer Characteristics
Drain-Source On-Resistance
REV2.0
- NOV 2010 RELEASED, JUN 2016 UPDATED -
- 5 -
AM2305
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
7.
Rdson vs. Vgs
8.
Capacitance vs. Vds
9.
Gate Charge
10. Source- Drain Diode Forward
11. Safe Operation Area
REV2.0
- NOV 2010 RELEASED, JUN 2016 UPDATED -
- 6 -
AM2305
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
12. Normalized Maximum Transient Thermal Impedance
DETAILED INFORMATION
1. Switching Test Circuit
2. Switching Waveforms
REV2.0
- NOV 2010 RELEASED, JUN 2016 UPDATED -
- 7 -
AM2305
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PACKAGE INFORMATION
Dimension in SOT-23 Package (Unit: mm)
SYMBOL
MIN.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
MAX.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
A
A1
A2
b
c
D
E
E1
e
0.950TYP
e1
L
1.800
2.000
0.550REF
L1
θ
0.300
0°
0.500
8°
REV2.0
- NOV 2010 RELEASED, JUN 2016 UPDATED -
- 8 -
AM2305
MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer. As used herein may involve
potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize
risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV2.0
- NOV 2010 RELEASED, JUN 2016 UPDATED -
- 9 -
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