AM2304E3VR [AITSEMI]
N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | AM2304E3VR |
| 厂家： | 
AiT Semiconductor |
| 描述： | N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总9页 (文件大小：461K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM2304
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION
FEATURES
AM2304 is available in a SOT-23 package.
30V/5.1A
R
R
DS(ON)= 25mΩ(max.) @ VGS= 10V
DS(ON)= 35mΩ(max.) @ VGS= 4.5V
Reliable and Rugged
Available in a SOT-23 package.
ORDERING INFORMATION
APPLICATION
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Package Type
SOT-23
Part Number
AM2304E3R
AM2304E3VR
Systems.
E3
Load Switch
V: Halogen free Package
R: Tape & Reel
PIN DESCRIPTION
Note
AiT provides all RoHS products
Suffix “ V “ means Halogen free Package
N-Channel MOSFET
REV2.0
- DEC 2013 RELEASED, NOV 2014 UPDATED -
- 1 -
AM2304
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
PIN DESCRIPTION
Top View
Pin #
Symbol
Function
Gate
1
2
3
G
S
D
Source
Drain
REV2.0
- DEC 2013 RELEASED, NOV 2014 UPDATED -
- 2 -
AM2304
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25℃, unless otherwise noted
V
DSS, Drain-Source Voltage
30V
±20V
VGSS, Gate-Source Voltage
TA=25℃
TA=70℃
VGS=10V
5.1A
ID, Continuous Drain Current
4.1A
IDM, 300μs Pulsed Drain Current
IS, Diode Continuous Forward Current
TJ, Maximum Junction Temperature
TSTG, Storage Temperature Range
20A
1.5A
150℃
-55℃~150℃
1W
TA=25℃
PD, Maximum Power Dissipation
TA=70℃
0.64W
90°C/W
125°C/W
t ≤ 10sec.
RθJANOTE1, Thermal Resistance-Junction to Ambient
Steady state
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
NOTE1: Surface Mounted on 1in2 pad area, t ≤ 10sec.
REV2.0
- DEC 2013 RELEASED, NOV 2014 UPDATED -
- 3 -
AM2304
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
ELECTRICAL CHARACTERISTICS
TA = 25℃, unless otherwise noted
Parameter
Symbol
Conditions
Min
Typ.
Max
Units
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
IDSS
VGS=0V,IDS=250μA
30
-
-
-
-
1
V
VDS=24V,VGS=0V
Zero Gate Voltage Drain Current
μA
TJ=85°C
30
Gate Threshold Voltage
Gate Leakage Current
VGS(th)
IGSS
VDS=VGS,IDS=250μA
VGS=±20V, VDS=0V
VGS=10V,IDS=8A
VGS=4.5V,ID=5A
1.3
1.8
-
2.5
±100
25
V
-
-
-
nA
21
27
RDS(ON)
NOTE2
Drain-Source On-state Resistance
mΩ
35
Diode Characteristics
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Dynamic Characteristics NOTE3
Gate Resistance
NOTE2
VSD
ISD=1A,VGS=0V
-
-
-
0.75
12.8
3.8
1.1
V
trr
-
-
ns
nC
ISD=8A, dlSD/dt=100A/μs
Qrr
RG
CISS
COSS
CRSS
tD(ON)
tR
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
-
-
-
-
-
-
-
-
1.5
410
70
41
6
-
-
W
Input Capacitance
Output Capacitance
VDS=15V,
-
pF
Frequency=1.0MHz
Reverse Transfer Capacitance
Turn-on Delay Time
-
10
13
20
5
VDD=15V, RL=15Ω
IDS=1A, VGEN=10V,
RG=6Ω
Turn-on Rise Time
9
ns
Turn-off Delay Time
tD(OFF)
tF
14
3.2
Turn-off Fall Time
Gate Charge Characteristics NOTE3
VGS=4.5V
VGS=10V
-
-
-
-
-
4
8
-
-
-
-
-
VDS=30V,
VGS=8V,
Total Gate Charge
QG
Gate-Source Charge
Gate-Drain Charge
QGS
QGD
QGth
1.5
1.5
0.75
nC
VDS=30V, VGS=10V,
IDS=8A
Threshold Gate Charge
NOTE2: Pulse test; pulse width≤300μs, duty cycle≤2%.
NOTE3: Guaranteed by design, not subject to production testing.
REV2.0
- DEC 2013 RELEASED, NOV 2014 UPDATED -
- 4 -
AM2304
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
TYPICAL CHARACTERISTICS
1. Power Dissipation
2. Drain Current
3. Safe Operation Area
4. Thermal Transient Impedance
5. Output Characteristics
6. Drain-Source On Resistance
REV2.0
- DEC 2013 RELEASED, NOV 2014 UPDATED -
- 5 -
AM2304
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
7. Gate-Source On Resistance
8. Gate Threshold Voltage
9. Drain-Source On Resistance
10. Source-Drain Diode Forward
11. Capacitance
12. Gate Charge
REV2.0
- DEC 2013 RELEASED, NOV 2014 UPDATED -
- 6 -
AM2304
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
DETAILED INFORMATION
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
REV2.0
- DEC 2013 RELEASED, NOV 2014 UPDATED -
- 7 -
AM2304
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
PACKAGE INFORMATION
Dimension in SOT-23 Package (Unit: mm)
SYMBOL
MIN
-
MAX
1.200
0.800
1.120
0.500
0.220
3.100
3.000
1.800
A
A1
A2
b
0.000
0.900
0.300
0.080
2.700
2.600
1.400
c
D
E
E1
e
0.950(BSC)
1.900(BSC)
e1
L
0.300
0°
0.600
8°
θ
NOTE: Dimension D and E1 do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed
10 mil per side.
REV2.0
- DEC 2013 RELEASED, NOV 2014 UPDATED -
- 8 -
AM2304
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE MOSFET
IMPORTANT NOTICE
AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to
discontinue any integrated circuit product or service without notice, and advises its customers to obtain the
latest version of relevant information to verify, before placing orders, that the information being relied on is
current.
AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to
be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT
products in such applications is understood to be fully at the risk of the customer. As used herein may involve
potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize
risks associated with the customer's applications, the customer should provide adequate design and
operating safeguards.
AiT Semiconductor Inc. assumes to no liability to customer product design or application support. AiT
warrants the performance of its products of the specifications applicable at the time of sale.
REV2.0
- DEC 2013 RELEASED, NOV 2014 UPDATED -
- 9 -
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