MSA0485 [AGILENT]
Cascadable Silicon Bipolar MMIC Amplifier; 级联硅双极MMIC放大器
| 型号： | MSA0485 |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | Cascadable Silicon Bipolar MMIC Amplifier |
| 文件： | 总4页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-0485
plastic package. This MMIC is
Features
85 Plastic Package
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 3.6 GHz
• 8.0 dB Typical Gain at
1.0 GHz
• 12.5 dBm Typical P1 dB at
1.0 GHz
The MSA-series is fabricated using
HP’s10GHzf ,25 GHzf
,
T
MAX
• Unconditionally Stable
(k>1)
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
• Low Cost Plastic Package
Description
The MSA-0485 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
Typical Biasing Configuration
R
bias
VCC > 7 V
RFC (Optional)
4
C
C
block
block
3
IN
MSA
OUT
1
V
= 5.25 V
d
2
5965-9577E
6-338
MSA-0485 Absolute Maximum Ratings
Thermal Resistance[2,4]
:
Parameter
AbsoluteMaximum[1]
θjc =90°C/W
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
85 mA
500mW
+13dBm
150°C
–65to150°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE =25°C.
3. Derate at 11.1 mW/°C for TC > 105°C.
4. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 50 mA, ZO = 50 Ω
Units Min. Typ. Max.
GP
PowerGain(|S21|2)
f=0.1GHz
f=1.0GHz
dB
8.3
8.0
7.0
∆GP
Gain Flatness
f=0.1to2.5GHz
dB
± 0.7
3.6
f3 dB
3 dB Bandwidth
GHz
Input VSWR
f=0.1to2.5GHz
f=0.1to2.5GHz
f=1.0GHz
1.6:1
2.0:1
7.0
VSWR
Output VSWR
NF
50 Ω Noise Figure
dB
dBm
dBm
psec
V
P1 dB
IP3
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
f=1.0GHz
12.5
25.5
125
f=1.0GHz
tD
f=1.0GHz
Vd
Device Voltage
4.2
5.25
–8.0
6.3
dV/dT
Device Voltage Temperature Coefficient
mV/°C
Note:
1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current
is on the following page.
6-339
MSA-0485 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 50 mA)
S11
S21
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
.21
.20
.20
.19
.19
.18
.16
.18
.21
.27
.33
.38
.42
.44
177
176
172
171
168
166
167
168
173
169
161
154
145
131
8.4
8.3
8.2
8.1
8.1
8.0
7.8
7.4
6.9
6.3
5.7
4.8
4.1
3.3
2.63
2.60
2.57
2.55
2.54
2.52
2.46
2.34
2.21
2.07
1.92
1.74
1.59
1.46
175
171
163
155
146
138
117
97
–16.1
–16.2
–16.1
–16.2
–16.0
–15.7
–15.3
–14.6
–13.8
–13.4
–12.6
–12.3
–12.1
–11.7
.156
.155
.156
.155
.158
.164
.171
.187
.204
.213
.234
.242
.249
.259
2
2
.08
.08
.10
.13
.16
.18
.25
.29
.34
.38
.39
.37
.36
.34
–16
–30
3
–54
5
–71
6
–83
9
–93
11
12
16
13
9
–116
–136
–150
–161
–172
–179
–174
–165
83
65
48
33
6
3
–3
18
4
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
12
10
8
80
9
8
7
6
5
T
T
T
= +85°C
= +25°C
= –25°C
C
C
C
60
Gain Flat to DC
6
40
4
20
0
0.1 GHz
1.0 GHz
2.0 GHz
2
0
4
0.1
0.3 0.5
1.0
3.0 6.0
20
30
40
50
(mA)
60
70
1
2
3
4
5
6
7
I
V
(V)
FREQUENCY (GHz)
d
d
Figure 3. Power Gain vs. Current.
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 50 mA.
Figure 2. Device Current vs. Voltage.
21
18
7.5
7.0
13
12
11
P
1 dB
I
= 70 mA
d
15
12
9
9
8
7
6.5
6.0
I
I
= 50 mA
= 30 mA
d
d
G
P
8
I
I
I
= 30 mA
= 50 mA
= 70 mA
d
d
d
NF
6
7
6
3
5.5
0.1
0.2 0.3 0.5
1.0
2.0
4.0
0.1
0.2 0.3 0.5
1.0
2.0
–25
0
+25 +55
TEMPERATURE (°C)
+85
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
Id=50mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-340
85 Plastic Package Dimensions
.020
.51
GROUND
4
0.143 ± 0.015
3.63 ± 0.38
45°
3
1
RF INPUT
RF OUTPUT
AND BIAS
Notes:
(unless otherwise specified)
in
mm
1. Dimensions are
2. Tolerances
2
GROUND
in .xxx = ± 0.005
mm .xx = ± 0.13
.085
2.15
.060 ± .010
1.52 ± .25
.006 ± .002
.15 ± .05
5° TYP.
.286 ± .030
7.36 ± .76
.07
0.43
6-341
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