MSA0686 [AGILENT]
Cascadable Silicon Bipolar MMIC Amplifier; 级联硅双极MMIC放大器
| 型号： | MSA0686 |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | Cascadable Silicon Bipolar MMIC Amplifier |
| 文件： | 总4页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-0686
Features
Description
86 Plastic Package
• Cascadable 50 Ω Gain Block
The MSA-0686 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for use as a
general purpose 50 Ω gain block.
Applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
• Low Operating Voltage:
3.5 V Typical Vd
• 3 dB Bandwidth:
DC to 0.8 GHz
• High Gain:
18.5 dBTypicalat0.5GHz
• Low Noise Figure:
3.0 dB Typical at 0.5 GHz
• Surface Mount Plastic
Package
The MSA-series is fabricated using
• Tape-and-Reel Packaging
Available[1]
HP’s10GHzf ,25 GHzf
,
T
MAX
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Note:
1. Refer to PACKAGING section “Tape-
and-Reel Packaging for Surface
Mount Semiconductors”.
Typical Biasing Configuration
R
bias
VCC > 5 V
RFC (Optional)
4
C
C
block
block
3
IN
MSA
OUT
1
V
= 3.5 V
d
2
5965-9588E
6-382
MSA-0686 Absolute Maximum Ratings
Parameter
AbsoluteMaximum[1]
Thermal Resistance[2,4]
:
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Notes:
50 mA
200mW
+13dBm
150°C
θjc =120°C/W
–65to150°C
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE =25°C.
3. Derate at 8.3 mW/°C for TC > 126°C.
4. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 16 mA, ZO = 50 Ω
Units Min. Typ. Max.
GP
PowerGain(|S21|2)
f=0.1GHz
dB
20.0
18.5
± 0.7
0.8
f=0.5GHz
16.5
∆GP
Gain Flatness
f=0.1to0.5GHz
dB
f3 dB
3 dB Bandwidth
GHz
Input VSWR
f=0.1to1.5GHz
f=0.1to1.5GHz
f=0.5GHz
1.7:1
1.7:1
3.0
VSWR
Output VSWR
NF
50 Ω Noise Figure
dB
dBm
dBm
psec
V
P1 dB
IP3
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
f=0.5GHz
2.0
f=0.5GHz
14.5
225
3.5
tD
f=0.5GHz
Vd
Device Voltage
2.8
4.2
dV/dT
Device Voltage Temperature Coefficient
mV/°C
–8.0
Notes:
1. The recommended operating current range for this device is 12 to 20 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number
No. of Devices
Container
MSA-0686-TR1
MSA-0686-BLK
1000
100
7" Reel
Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-383
MSA-0686 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 16 mA)
S11
S21
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.1
0.2
0.3
0.4
0.5
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
.06
.06
.07
.08
.08
.09
.12
.15
.25
.34
.43
.49
.56
.61
.70
–175
–169
–164
–158
–154
–152
–152
–154
–171
171
20.1
19.8
19.4
19.1
18.7
18.0
17.2
16.3
14.0
11.9
9.8
10.08 170
9.77 161
9.35 152
8.98 144
8.58 135
7.94 128
7.25 114
6.51 102
–23.3
–23.2
–22.5
–22.2
–21.6
–21.1
–20.3
–19.5
–17.6
–16.1
–15.9
–15.3
–15.1
–14.9
–14.7
.069
.069
.075
.078
.083
.088
.097
.106
.133
.157
.161
.171
.175
.180
.185
4
8
.04
.07
.10
.13
.15
.18
.21
.24
.27
.27
.27
.26
.25
.24
.24
–84
1.05
1.05
1.03
1.02
1.01
1.01
1.00
0.99
0.99
1.01
1.06
1.10
1.13
1.15
1.16
–103
–113
–123
–131
–140
–155
–168
165
13
16
18
21
25
25
22
19
16
11
6
5.01
3.94
3.09
2.51
2.09
1.78
76
56
42
28
15
3
147
155
134
140
8.0
124
128
6.4
118
118
5.0
3
–2
115
99
2.4
1.32 –18
118
Note:
1. A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
24
25
20
19
18
17
T
T
T
= +85°C
= +25°C
= –25°C
C
C
C
21
18
15
12
9
20
15
10
G
P
5
5
NF
P
4
3
4
3
I
I
I
= 12 mA
= 16 mA
= 25 mA
d
d
d
1 dB
6
2
1
2
1
5
0
3
0
Gain Flat to DC
0.1 0.3 0.5
0
0
1.0
3.0 6.0
0
1
2
3
4
5
–25
0
+25 +55
+85
FREQUENCY (GHz)
V
(V)
d
TEMPERATURE (°C)
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C.
Figure 2. Device Current vs. Voltage.
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
Id=16mA.
4.0
3.5
12
I
I
= 30 mA
d
d
8
= 20 mA
= 16 mA
3.0
2.5
4
0
I
d
I
I
I
= 12 mA
d
d
d
I
= 12 mA
= 16 mA, 30 mA
= 20 mA
d
–4
2.0
0.1
0.2 0.3 0.5
1.0
2.0
4.0
0.1
0.2 0.3 0.5
1.0
2.0
4.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 5. Noise Figure vs. Frequency.
6-384
86 Plastic Package Dimensions
0.51 ± 0.13
(0.020 ± 0.005)
4
GROUND
RF OUTPUT
AND DC BIAS
45°
RF INPUT
C
L
3
1
2.34 ± 0.38
(0.092 ± 0.015)
2
GROUND
2.67 ± 0.38
(0.105 ± 0.15)
1.52 ± 0.25
(0.060 ± 0.010)
0.203 ± 0.051
5° TYP.
(0.006 ± 0.002)
8° MAX
0° MIN
0.66 ± 0.013
(0.026 ± 0.005)
2.16 ± 0.13
(0.085 ± 0.005)
0.30 MIN
(0.012 MIN)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
6-385
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