MSA0886 [AGILENT]
Cascadable Silicon Bipolar MMIC Amplifier; 级联硅双极MMIC放大器
| 型号： | MSA0886 |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | Cascadable Silicon Bipolar MMIC Amplifier |
| 文件： | 总4页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-0886
Features
Description
86 Plastic Package
• Usable Gain to 5.5 GHz
The MSA-0886 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for use as a
general purpose 50 Ω gain block
above 0.5 GHz and can be used as
a high gain transistor below this
frequency. Typical applications
include narrow and moderate band
IF and RF amplifiers in commer-
cial and industrial applications.
• High Gain:
32.5dBTypicalat0.1 GHz
22.5dBTypicalat1.0 GHz
• Low Noise Figure:
3.3 dBTypicalat1.0 GHz
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available[1]
ion implantation, and gold metalli-
zation to achieve excellent perfor-
mance, uniformity and reliability.
The use of an external bias resistor
for temperature and current
Note:
1. Refer to PACKAGING section “Tape-
and-Reel Packaging for Semiconduc-
tor Devices.”
The MSA-series is fabricated using
HP’s10GHzf ,25 GHzf
,
T
MAX
silicon bipolar MMIC process
which uses nitride self-alignment,
stability also allows bias flexibility.
Typical Biasing Configuration
R
bias
VCC
> 10 V
RFC (Optional)
4
C
C
block
block
3
IN
MSA
OUT
1
V
= 7.8 V
d
2
5965-9547E
6-426
MSA-0886 Absolute Maximum Ratings
Parameter
AbsoluteMaximum[1]
Thermal Resistance[2,4]
:
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Notes:
65 mA
500mW
+13dBm
150°C
θjc =140°C/W
–65°C to 150°C
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE=25°C.
3. Derate at 7.1 mW/°C for TC > 80°C.
4. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 36 mA, ZO = 50 Ω
Units Min. Typ. Max.
GP
PowerGain(|S21|2)
f=0.1GHz
f=1.0GHz
dB
32.5
22.5
20.5
Input VSWR
f=0.1to3.0GHz
f=0.1to3.0GHz
f=1.0GHz
2.1:1
1.9:1
3.3
VSWR
Output VSWR
NF
50 Ω Noise Figure
dB
dBm
dBm
psec
V
P1 dB
IP3
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
f=1.0GHz
12.5
27.0
140
f=1.0GHz
tD
f=1.0GHz
Vd
Device Voltage
6.2
7.8
9.4
dV/dT
Device Voltage Temperature Coefficient
mV/°C
–17.0
Note:
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number
No. of Devices
Container
MSA-0886-TR1
MSA-0886-BLK
1000
100
7" Reel
Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-427
MSA-0886 Typical Scattering Parameters[1] (ZO = 50 Ω, TA = 25°C, Id = 36 mA)
S11
S21
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
.63
.56
.43
.35
.30
.27
.27
.31
.35
.40
.45
.51
.61
.68
–22
–41
32.5
31.3
28.6
26.4
24.2
22.4
19.2
16.7
14.8
12.9
11.4
9.9
42.12 160
36.68 143
26.94 119
20.89 104
–36.7
–33.9
–29.1
–27.0
–25.3
–24.2
–21.6
–19.5
–17.9
–17.4
–16.8
–16.1
–15.7
–15.2
.015
.020
.035
.045
.054
.062
.083
.105
.128
.135
.145
.157
.164
.173
54
50
52
49
50
49
46
41
36
30
25
19
10
4
.62
.55
.43
.34
.29
.26
.23
.22
.21
.20
.19
.18
.17
.23
–24
–46
–79
0.68
0.64
0.69
0.77
0.83
0.87
0.93
0.96
0.96
1.01
1.02
1.01
1.00
0.95
–69
–88
–103
–124
–139
–172
163
–104
–116
–144
–166
178
16.21
13.20
9.15
6.84
5.50
4.41
3.72
3.14
93
83
65
49
38
25
13
1
149
162
132
149
124
137
121
116
7.3
2.31 –22
1.69 –42
130
100
4.6
143
Note:
1. A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
35
40
30
20
23
22
21
T
T
T
= +85°C
= +25°C
= –25°C
C
C
C
30
G
P
P
25
20
I
= 36 mA
d
13
12
11
1 dB
15
I
= 20 mA
d
10
5
4
3
2
10
0
NF
Gain Flat to DC
0
0.1
0.3 0.5
1.0
3.0 6.0
–25
0
+25 +55
+85
0
2
4
6
8
10
FREQUENCY (GHz)
V
(V)
TEMPERATURE (°C)
d
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
Id=36mA.
Figure 1. Typical Power Gain vs.
Frequency, Id = 36 mA.
Figure 2. Device Current vs. Voltage.
4.5
4.0
16
I
I
I
= 20 mA
= 36 mA
= 40 mA
d
d
d
I
I
= 40 mA
= 36 mA
d
d
14
12
3.5
3.0
2.5
10
8
6
4
I
= 20 mA
d
0.1
0.2 0.3 0.5
1.0
2.0
4.0
0.1
0.2 0.3 0.5
1.0
2.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 5. Noise Figure vs. Frequency.
6-428
86 Plastic Package Dimensions
0.51 ± 0.13
(0.020 ± 0.005)
4
GROUND
RF OUTPUT
AND DC BIAS
45°
RF INPUT
C
L
3
1
2.34 ± 0.38
(0.092 ± 0.015)
2
GROUND
2.67 ± 0.38
(0.105 ± 0.15)
1.52 ± 0.25
(0.060 ± 0.010)
0.203 ± 0.051
5° TYP.
(0.006 ± 0.002)
8° MAX
0° MIN
0.66 ± 0.013
(0.026 ± 0.005)
2.16 ± 0.13
(0.085 ± 0.005)
0.30 MIN
(0.012 MIN)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
6-429
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