MSA0635 [ETC]
Cascadable Silicon Bipolar MMIC? Amplifiers; 级联硅双极MMIC ？放大器
| 型号： | MSA0635 |
| 厂家： | 
ETC |
| 描述： | Cascadable Silicon Bipolar MMIC? Amplifiers |
| 文件： | 总4页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Cascadable Silicon Bipolar
MMIC Amplifiers
Technical Data
MSA-0635, -0636
35 micro-X Package[1]
designed for use as a general
Features
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
• Cascadable 50 Ω Gain Block
• Low Operating Voltage:
3.5 V Typical Vd
• 3 dB Bandwidth:
DC to 0.9 GHz
The MSA-series is fabricated using
• High Gain:
HP’s10GHzf ,25 GHzf
,
T
MAX
19.0 dBTypicalat0.5GHz
Note:
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
• Low Noise Figure:
1. Short leaded 36 package available
upon request.
2.8 dB Typical at 0.5 GHz
• Cost Effective Ceramic
Microstrip Package
Description
The MSA-0635 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
Available in cut lead version
(MMIC) housed in a cost effective, (package36)asMSA-0636.
microstrip package. This MMIC is
Typical Biasing Configuration
R
bias
VCC > 5 V
RFC (Optional)
4
C
C
block
block
3
IN
MSA
OUT
1
V
= 3.5 V
d
2
5965-9585E
6-370
MSA-0635, -0636 Absolute Maximum Ratings
Parameter
AbsoluteMaximum[1]
Thermal Resistance[2,5]
:
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature[4]
Notes:
50 mA
200mW
+13dBm
200°C
θjc =155°C/W
–65to200°C
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE =25°C.
3. Derate at 6.5 mW/°C for TC > 169°C.
4. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.
5. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 16 mA, ZO = 50 Ω
Units Min. Typ. Max.
GP
PowerGain(|S21|2)
f=0.1GHz
dB
dB
19.0
20.5
± 0.7
0.9
22.0
∆GP
f3 dB
Gain Flatness
f=0.1to2.5GHz
± 1.0
3 dB Bandwidth
GHz
Input VSWR
f=0.1to1.5GHz
f=0.1to1.5GHz
f=0.5GHz
1.4:1
1.3:1
2.8
VSWR
Output VSWR
NF
50 Ω Noise Figure
dB
dBm
dBm
psec
V
4.0
3.9
P1 dB
IP3
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
f=0.5GHz
2.0
f=0.5GHz
14.5
200
3.5
tD
f=0.5GHz
Vd
Device Voltage
3.1
dV/dT
Device Voltage Temperature Coefficient
mV/°C
–8.0
Note:
1. The recommended operating current range for this device is 12 to 30 mA. Typical performance as a function of current
is on the following page.
6-371
MSA-0635, -0636 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 16 mA)
S11
S21
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.1
0.2
0.3
0.4
0.5
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
.03
.02
.02
.02
.02
.04
.07
.10
.17
.24
.31
.37
.42
.46
.48
.52
–178
–177
–164
–116
–100
–89
20.5
20.3
20.0
19.6
19.2
18.7
17.7
16.6
14.2
12.1
10.3
8.7
10.59 171
10.31 161
9.96 152
9.55 144
9.08 136
8.59 128
7.66 115
6.79 103
–23.4
–22.9
–22.4
–22.0
–21.8
–21.3
–20.2
–19.4
–17.2
–15.8
–15.1
–14.4
–13.9
–13.3
–12.8
–12.2
.068
.071
.076
.079
.081
.086
.098
.107
.138
.163
.175
.190
.203
.216
.229
.245
5
8
.04
.05
.06
.07
.09
.09
.10
.11
.12
.12
.12
.11
.10
.08
.08
.09
–44
–68
–87
1.05
1.04
1.04
1.03
1.04
1.04
1.03
1.02
1.03
1.04
1.08
1.10
1.11
1.11
1.11
1.09
14
19
21
24
29
31
30
26
27
24
19
16
12
8
–104
–114
–123
–140
–156
172
–96
–108
–134
–160
–178
166
5.13
4.01
3.26
2.72
2.33
2.04
1.81
79
60
48
34
21
9
148
140
135
151
7.4
144
139
6.2
167
126
5.1
–3
–173
–173
110
4.2
1.62 –15
Note:
1. A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
21
25
25
20
15
10
5
T
T
T
= +125°C
= +25°C
= –55°C
C
C
C
0.1 GHz
0.5 GHz
Gain Flat to DC
18
20
15
10
1.0 GHz
15
12
2.0 GHz
9
6
3
0
5
0
0
0.1
0.3 0.5
1.0
3.0 6.0
0
1
2
3
4
5
10
15
20
I
25
(mA)
30
FREQUENCY (GHz)
V
(V)
d
d
Figure 1. Typical Power Gain vs.
Frequency, Id = 16 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
4.0
12
8
21
20
19
I
I
= 30 mA
d
d
3.5
18
17
G
P
= 20 mA
= 16 mA
3.0
2.5
2.0
5
5
4
0
NF
P
4
3
4
3
I
d
d
1 dB
I
I
I
= 12 mA
2
2
1
d
d
d
= 16 mA, 30 mA
= 20 mA
1
0
I
= 12 mA
-4
0.1
0
0.2 0.3 0.5
1.0
2.0
4.0
0.1
0.2 0.3 0.5
1.0
2.0
4.0
–55 –25
+25
+85
+125
FREQUENCY (GHz)
FREQUENCY (GHz)
TEMPERATURE (°C)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 0.5 GHz,
Id=16mA.
6-372
35 micro-X Package Dimensions
4
GROUND
.085
2.15
.083
2.11
DIA.
RF OUTPUT
AND BIAS
RF INPUT
1
3
.020
.508
2
GROUND
Notes:
(unless otherwise specified)
in
mm
1. Dimensions are
2. Tolerances
.057 ± .010
1.45 ± .25
.100
2.54
in .xxx = ± 0.005
mm .xx = ± 0.13
.022
.56
.455 ± .030
11.54 ± .75
.006 ± .002
.15 ± .05
6-373
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