MSA-0611-TR1 [AGILENT]
Cascadable Silicon Bipolar MMIC Amplifier; 级联硅双极MMIC放大器
| 型号： | MSA-0611-TR1 |
| 厂家： | 
AGILENT TECHNOLOGIES, LTD. |
| 描述： | Cascadable Silicon Bipolar MMIC Amplifier |
| 文件： | 总4页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-0611
Features
Description
SOT-143 Package
• Cascadable 50 Ω Gain Block
The MSA-0611 is a low cost silicon
bipolar Monolithic Microwave
Integrated Circuit (MMIC) housed
in the surface mount plastic
SOT-143 package. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
• 3 dB Bandwidth:
DC to 0.7 GHz
• High Gain:
18.0dBTypicalat0.5 GHz
• Low Noise Figure:
3.0dBTypicalat0.5 GHz
• Low Cost Surface Mount
Plastic Package
• Tape-and-Reel Packaging
Option Available[1]
The MSA-series is fabricated using
HP’s10GHzf ,25 GHzf
silicon bipolar MMIC process
which uses nitride self-alignment,
,
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
T
MAX
Note:
1. Refer to PACKAGING section “Tape-
and-Reel Packaging for Semiconduc-
tor Devices”.
ion implantation, and gold metalli- current stability also allows bias
zation to achieve excellent
flexibility.
Typical Biasing Configuration
R
bias
VCC > 5 V
RFC (Optional)
C
C
block
block
IN
MSA
OUT
V
= 3.3 V
d
5965-9584E
6-366
MSA-0611 Absolute Maximum Ratings
Thermal Resistance[2,4]
:
Parameter
AbsoluteMaximum[1]
θjc =505°C/W
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
40 mA
125mW
+13dBm
150°C
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE =25°C.
–65to150°C
3. Derate at 2.0 mW/°C for TC > 87°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 16 mA, ZO = 50 Ω
Units Min. Typ. Max.
GP
PowerGain(|S21|2)
f=0.1GHz
f=0.5GHz
dB
19.5
18.0
16.0
∆GP
Gain Flatness
f=0.1to0.5GHz
dB
± 0.8
0.7
f3 dB
3 dB Bandwidth
GHz
Input VSWR
f=0.1to1.5GHz
f=0.1to1.5GHz
f=0.5GHz
1.6:1
1.5:1
3.0
VSWR
Output VSWR
NF
50 Ω Noise Figure
dB
dBm
dBm
psec
V
P1 dB
IP3
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
f=0.5GHz
2.0
f=0.5GHz
14.0
225
3.3
tD
f=0.5GHz
Vd
Device Voltage
TC =25°C
2.6
4.0
dV/dT
Device Voltage Temperature Coefficient
mV/°C
–8.0
Notes:
1. The recommended operating current range for this device is 12 to 20 mA. Typical gain performance as a function of
current is on the following page.
Part Number Ordering Information
Part Number
No. of Devices
Container
MSA-0611-TR1
MSA-0611-BLK
3000
100
7" Reel
Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-367
MSA-0611 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 16 mA)
S11
S21
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.1
0.2
0.3
0.4
0.5
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
.04
.03
.03
.04
.05
.07
.10
.13
.22
.31
.39
.45
.50
.52
–176
–163
–149
–132
–127
–123
–129
–139
–164
171
19.6
19.3
18.9
18.5
18.0
17.3
16.2
15.0
12.5
10.1
8.1
9.53 170
9.25 160
8.79 150
8.38 141
7.96 133
7.33 125
6.46 111
–23.0
–22.7
–22.8
–21.9
–21.6
–21.2
–19.7
–19.0
–17.1
–16.1
–15.4
–15.0
–14.6
–14.1
.071
.073
.072
.080
.083
.087
.103
.112
.139
.157
.169
.178
.185
.197
6
10
14
17
21
23
25
28
25
21
22
18
15
11
.04
.07
.09
.11
.13
.15
.17
.18
.19
.19
.20
.19
.16
.14
–57
–82
1.07
1.07
1.10
1.07
1.07
1.07
1.04
1.06
1.07
1.13
1.19
1.26
1.33
1.37
–97
–111
–122
–131
–147
–160
175
5.64
4.22
3.20
2.55
2.07
1.72
1.48
98
73
53
42
28
16
4
160
158
153
144
6.3
150
132
4.7
3.4
152
121
166
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
4
3
21
25
20
15
10
5
18
0.1 GHz
0.5 GHz
Gain Flat to DC
15
12
1.0 GHz
2
1
2.0 GHz
9
6
3
0
0
0
0.1
0.3 0.5
1.0
3.0 6.0
10
15
20
I
25
(mA)
30
0.1
0.2 0.3
0.5
1.0
2.0
FREQUENCY (GHz)
FREQUENCY (GHz)
d
Figure 1. Power Gain vs. Frequency,
A = 25°C, Id = 16 mA.
Figure 2. Power Gain vs. Current.
Figure 3. Output Power @ 1 dB Gain
Compression vs. Frequency,
T
I
d = 16 mA.
4.0
3.5
3.0
2.5
0.1
0.2 0.3
0.5
1.0
2.0
FREQUENCY (GHz)
Figure 4. Noise Figure vs. Frequency,
d = 16 mA.
I
6-368
SOT-143 Package Dimensions
0.92 (0.036)
0.78 (0.031)
PACKAGE
MARKING
CODE
RF OUTPUT AND BIAS
GROUND
1.40 (0.055)
1.20 (0.047)
2.65 (0.104)
2.10 (0.083)
A06
RF INPUT
GROUND
0.60 (0.024)
0.45 (0.018)
0.54 (0.021)
0.37 (0.015)
2.04 (0.080)
1.78 (0.070)
0.15 (0.006)
0.09 (0.003)
3.06 (0.120)
2.80 (0.110)
1.02 (0.041)
0.85 (0.033)
0.10 (0.004)
0.013 (0.0005)
0.69 (0.027)
0.45 (0.018)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
6-369
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