APTGT400SK120 [ADPOW]
Buck chopper Fast Trench + Field Stop IGBT Power Module; 降压斩波快速沟道+场截止IGBT功率模块
| 型号： | APTGT400SK120 |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Buck chopper Fast Trench + Field Stop IGBT Power Module |
| 文件： | 总5页 (文件大小：272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT400SK120
Buck chopper
Fast Trench + Field Stop IGBT®
VCES = 1200V
IC = 400A @ Tc = 80°C
Application
•
•
AC and DC motor control
VBUS
Switched Mode Power Supplies
Q1
G1
Features
•
Fast Trench + Field Stop IGBT® Technology
-
-
-
-
-
-
-
-
Low voltage drop
E1
OUT
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
CR2
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
0/VBUS
•
•
Kelvin emitter for easy drive
Very low stray inductance
-
-
Symmetrical design
M5 power connectors
•
High level of integration
G1
VBUS
0/VBUS
OUT
Benefits
E1
•
•
•
•
•
•
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
560 *
400
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
800
±20
V
W
TC = 25°C
1785
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C 800A @ 1100V
* Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature
greater than 100°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 - 5
APT website – http://www.advancedpower.com
APTGT400SK120
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1200V
750
2.1
µA
Tj = 25°C
Tj = 125°C
1.4
5.0
1.7
2.0
5.8
VGE =15V
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES
V
IC = 400A
VGE = VCE , IC = 4 mA
6.5
800
V
nA
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
28
nF
Output Capacitance
1.6
1.2
260
30
420
80
Reverse Transfer Capacitance
Inductive Switching (25°C)
VGE = ±15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
ns
VBus = 600V
IC = 400A
RG = 1.2Ω
Inductive Switching (125°C)
VGE = ±15V
290
50
520
100
40
ns
VBus = 600V
IC = 300A
Tf
Fall Time
RG = 1.2Ω
Eon
Eoff
Turn on Energy
Turn off Energy
mJ
40
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
VR=1200V
750
IRM
Maximum Reverse Leakage Current
µA
Tj = 125°C
1000
IF(AV)
VF
Maximum Average Forward Current
Diode Forward Voltage
50% duty cycle
IF = 400A
Tc = 80°C
Tj = 25°C
Tj = 125°C
400
1.6
1.6
A
V
2.1
VGE = 0V
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
170
280
36
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 400A
VR = 600V
di/dt =3500A/µs
Qrr
µC
72
2 - 5
APT website – http://www.advancedpower.com
APTGT400SK120
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.07
0.13
RthJC
Junction to Case
°C/W
V
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
2500
-40
-40
-40
3
150
125
100
5
3.5
280
°C
Operating Case Temperature
To heatsink
For terminals
M6
M5
Torque Mounting torque
N.m
g
2
Wt
Package Weight
Package outline (dimensions in mm)
3 - 5
APT website – http://www.advancedpower.com
APTGT400SK120
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
800
700
600
500
400
300
200
100
0
800
700
600
500
400
300
200
100
0
VGE=17V
TJ = 125°C
TJ=25°C
VGE=13V
VGE=15V
TJ=125°C
VGE=9V
0
1
2
3
4
0
1
2
3
4
V
CE (V)
V
CE (V)
Energy losses vs Collector Current
Transfert Characteristics
100
80
60
40
20
0
800
700
600
500
400
300
200
100
0
VCE = 600V
VGE = 15V
RG = 1.2Ω
TJ = 125°C
Eon
Eoff
Er
TJ=25°C
TJ=125°C
Eon
TJ=125°C
0
100 200 300 400 500 600 700 800
5
6
7
8
9
10
11
12
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
100
90
80
70
900
800
700
600
500
400
300
200
100
0
VCE = 600V
VGE =15V
IC = 400A
TJ = 125°C
Eon
60
Eoff
50
40
Er
VGE=15V
TJ=125°C
RG=1.2 Ω
30
20
10
0
0
2
4
6
8
10
0
300
600
900
1200
1500
VCE (V)
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.08
0.06
0.04
0.02
0
0.9
0.7
IGBT
0.5
0.3
0.1
Single Pulse
0.01
0.05
0.00001
0.0001
0.001
0.1
1
10
rectangular Pulse Duration (Seconds)
4 - 5
APT website – http://www.advancedpower.com
APTGT400SK120
Operating Frequency vs Collector Current
Forward Characteristic of diode
60
50
40
30
20
10
0
800
700
600
500
400
300
200
100
0
VCE=600V
D=50%
TJ=25°C
RG=1.2Ω
TJ=125°C
Tc=75°C
ZCS
ZVS
TJ=125°C
Hard
switching
TJ=125°C
TJ=25°C
0
0.4
0.8
1.2
VF (V)
1.6
2
2.4
0
100
200
300
IC (A)
400
500
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.14
0.12
0.1
0.9
Diode
0.7
0.08
0.06
0.04
0.02
0
0.5
0.3
0.1
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products arecovered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
5 - 5
APT website – http://www.advancedpower.com
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