5STP10D1401 [ABB]
Phase Control Thyristor; 相位控制晶闸管
| 型号： | 5STP10D1401 |
| 厂家： | 
THE ABB GROUP |
| 描述： | Phase Control Thyristor |
| 文件： | 总6页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDRM = 1600
IT(AV)M = 969
IT(RMS) = 1521
ITSM
V(T0)
rT
V
A
A
A
V
Phase Control Thyristor
= 15×103
= 0.933
= 0.302
5STP 10D1601
mW
Doc. No. 5SYA1057-01 March 05
·
·
·
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Blocking
Maximum rated values 1)
Symbol Conditions
VDRM, VRRM f = 50 Hz, tp = 10 ms
5STP 10D1601 5STP 10D1401 5STP 10D1201
1600 V
1400 V
1200 V
dV/dtcrit
Exp. to 1070 V, Tvj = 125°C
1000 V/µs
Characteristic values
Parameter
Symbol Conditions
IDRM VDRM, Tvj = 125°C
IRRM VRRM, Tvj = 125°C
min
typ
max
70
70
Unit
Forward leakage current
Reverse leakage current
mA
mA
Mechanical data
Maximum rated values 1)
Parameter
Symbol Conditions
min
typ
max
Unit
Mounting force
Acceleration
FM
8
10
12
50
kN
a
a
Device unclamped
Device clamped
m/s2
m/s2
Acceleration
100
Characteristic values
Parameter
Symbol Conditions
min
typ
max
0.26
Unit
Weight
m
kg
Surface creepage distance
Air strike distance
DS
Da
25
14
mm
mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5STP 10D1601
On-state
Maximum rated values 1)
Parameter
Symbol Conditions
min
typ
max
Unit
A
Average on-state current
RMS on-state current
IT(AV)M
IT(RMS)
ITSM
Half sine wave, Tc = 70°C
969
1521
15×103
A
Peak non-repetitive surge
current
tp = 10 ms, Tvj = 125 °C,
VD = VR = 0 V
A
Limiting load integral
I2t
1.13×106 A2s
16×103
Peak non-repetitive surge
current
ITSM
tp = 8.3 ms, Tvj = 125 °C,
VD = VR = 0 V
A
Limiting load integral
Characteristic values
Parameter
I2t
1.06×106 A2s
Symbol Conditions
min
typ
max
1.4
Unit
V
On-state voltage
Threshold voltage
Slope resistance
Holding current
VT
V(T0)
rT
IT = 1500 A, Tvj = 125 °C
IT = 1000 A - 3600 A, Tvj= 125 °C
0.933
0.302
V
mW
mA
mA
mA
mA
IH
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
170
90
Latching current
IL
450
350
Switching
Maximum rated values 1)
Parameter
Symbol Conditions
min
typ
max
Unit
Critical rate of rise of on-
state current
di/dtcrit
Tvj = 125 °C,
IT = IT(AV)
Cont.
200
A/µs
,
f = 50 Hz
Cont.
Critical rate of rise of on-
state current
di/dtcrit
1000
A/µs
µs
VD £ 1070 V,
f = 1 Hz
IFG = 2 A, tr = 0.3 µs
Circuit-commutated turn-off tq
time
Tvj = 125°C, ITRM = 1500 A,
VR = 200 V, diT/dt = -12.5 A/µs,
150
VD £ 0.67×VDRM, dvD/dt = 50V/µs
Characteristic values
Parameter
Symbol Conditions
min
typ
1400
max
Unit
Recovery charge
Qrr
Tvj = 125°C, ITRM = 1500 A,
VR = 200 V,
µAs
diT/dt = -12.5 A/µs
Gate turn-on delay time
tgd
2
µs
VD = 0.4×VRM, IFG = 2 A,
tr = 0.3 µs, Tvj = 25 °C
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1057-01 March 05
page 2 of 6
5STP 10D1601
Triggering
Maximum rated values 1)
Parameter
Symbol Conditions
min
min
typ
typ
max
Unit
Peak forward gate voltage VFGM
Peak forward gate current IFGM
Peak reverse gate voltage VRGM
12
10
10
3
V
A
V
Mean forward gate power
Characteristic values
Parameter
PG(AV)
W
Symbol Conditions
max
Unit
Gate-trigger voltage
VGT
Tvj = -40 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = -40 °C
Tvj = 25 °C
Tvj = 125 °C
4
3
V
0.25
2
Gate-trigger current
IGT
500
250
150
mA
10
Thermal
Maximum rated values 1)
Parameter
Symbol Conditions
min
typ
max
Unit
Operating junction
temperature range
Tvj
-40
125
°C
Storage temperature range Tstg
-40
125
°C
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Thermal resistance junction Rth(j-c)
to case
Double-side cooled
Fm = 8...12 kN
32
K/kW
Rth(j-c)A Anode-side cooled
Fm = 8...12 kN
52
83
7.5
15
K/kW
K/kW
K/kW
K/kW
Rth(j-c)C Cathode-side cooled
Fm = 8...12 kN
Thermal resistance case to Rth(c-h)
heatsink
Double-side cooled
Fm = 8...12 kN
Rth(c-h)
Single-side cooled
Fm = 8...12 kN
Analytical function for transient thermal
impedance:
n
-t/ti
Z
(t) = R (1-e )
å
th(j-c)
th i
i=1
i
1
2
3
4
Rth i(K/kW) 13.070
0.4857
8.030
0.2162
8.200
0.0762
2.700
0.0043
ti(s)
Fig. 1 Transient thermal impedance junction-to case.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1057-01 March 05
page 3 of 6
5STP 10D1601
25°C
125°C
7000
6000
5000
4000
3000
2000
1000
0
26
24
22
20
18
16
14
12
10
8
1,6
i2dt
ò
1,5
1,4
1,3
1,2
1,1
1
I TSM
0,9
0,8
0,7
0
1
2
3
V T ( V )
4
1
10
100
t ( ms )
Fig. 2 Max. on-state voltage characteristics
Fig. 3 Surge forward current vs. pulse length. Half
sine wave, single pulse, VR = 0 V
14
7
VFGM
12
6
5
4
3
2
1
0
DC = P GAVm
500µs
1ms
10
8
-40 °C
+25 °C
6
+125 °C
4
10ms
DC = P GAVm
2
VGTmin
0
0
2
4
6
8
10
I G ( A )
12
0
0,5
1
I
G ( A )
Fig. 4 Gate trigger characteristics
Fig. 5 Gate trigger characteristics
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1057-01 March 05
page 4 of 6
5STP 10D1601
= 30° 60° 90° 120180°
1800
1600
1400
1200
1000
800
y
1800
1600
1400
1200
1000
800
600
400
200
0
= 30° 60° 90° 120° 180°
y
270°
DC
DC
600
400
200
0
0
200
400
600
800
1000 1200
0
200
400
600
800
1000 1200
ITAV ( A )
ITAV ( A )
Fig. 6 Forward power loss vs. average forward
Fig. 7 Forward power loss vs. average forward
current, sine waveform, f = 50 Hz, T = 1/f
current, square waveform, f = 50 Hz, T = 1/f
130
120
110
100
90
130
120
110
100
90
80
80
DC
DC
70
60
70
270°
60
= 30° 60° 90° 120°180°
= 30° 60° 90°120° 180°
y
400
y
400
0
200
600
800
1000
1200
0
200
600
800
1000
1200
ITAV ( A )
ITAV ( A )
Fig. 8 Max. case temperature vs.average forward
Fig. 9 Max. case temperature vs.average forward
current, sine waveform, f = 50Hz, T = 1/f
current, square waveform, f = 50Hz, T = 1/f
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1057-01 March 05
page 5 of 6
5STP 10D1601
RED
WHITE
Fig. 10 Device Outline Drawing.
Related application notes:
Doc. Nr
Titel
5SYA2020
5SYA2034
5SYA 2036
Design of RC-Snubber for Phase Control Applications
Gate-drive Recommendations for PCT's
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
Please refer to http://www.abb.com/semiconductors for actual versions.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Doc. No. 5SYA1057-01 March 05
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax
+41 (0)58 586 1306
Email
Internet
abbsem@ch.abb.com
www.abb.com/semiconductors
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