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5STP12F3600

更新时间：2024-09-18 05:33:26
品牌：ABB
描述：Phase Control Thyristor

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5STP12F3600 概述

Phase Control Thyristor 相位控制晶闸管 可控硅整流器

5STP12F3600 规格参数

生命周期：Active包装说明：DISK BUTTON, O-CEDB-X4
Reach Compliance Code：compliantHTS代码：8541.30.00.80
风险等级：5.68Is Samacsys：N
配置：SINGLE最大直流栅极触发电流：400 mA
JESD-30 代码：O-CEDB-X4通态非重复峰值电流：15000 A
元件数量：1端子数量：4
最大通态电流：1230000 A最高工作温度：125 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：ROUND
封装形式：DISK BUTTON认证状态：Not Qualified
最大均方根通态电流：1800 A断态重复峰值电压：3600 V
重复峰值反向电压：3600 V子类别：Silicon Controlled Rectifiers
表面贴装：YES端子形式：UNSPECIFIED
端子位置：END触发设备类型：SCR
Base Number Matches：1

5STP12F3600 数据手册

通过下载5STP12F3600数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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V
DSM  
ITAVM  
ITRMS  
ITSM  
V
T0  
=
=
=
4200 V  
1150 A  
1800 A  
Phase Control Thyristor  
= 15000 
A  
5STP 12F4200  
=
=
0.95 V  
0.575  
r
T  
mΩ  
Doc. No. 5SYA1021-03 Jan. 02  
• Patented free-floating silicon technology  
• Low on-state and switching losses  
• Designed for traction, energy and industrial applications  
• Optimum power handling capability  
Blocking  
Maximum rated values 1)  
Symbol  
Conditions  
5STP 12F4200 5STP 12F4000 5STP 12F3600  
VDRM, VRRM f = 50 Hz, tp = 10 ms  
4200 V  
4000 V  
3600 V  
VRSM  
tp = 5 ms, single pulse  
4600 V  
4400 V  
4000 V  
dV/dtcrit  
Exp. to 0.67 x VDRM, Tvj = 125°C  
1000 V/µs  
Characteristic values  
Parameter  
Forward leakage current  
Reverse leakage current  
Symbol Conditions  
IDRM VDRM, Tvj = 125°C  
IRRM VRRM, Tvj = 125°C  
min  
typ  
max  
200  
200  
Unit  
mA  
mA  
Mechanical data  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
FM  
min  
min  
typ  
max  
Unit  
Mounting force  
Acceleration  
Acceleration  
Characteristic values  
Parameter  
14  
22  
24  
50  
100  
kN  
a
a
Device unclamped  
Device clamped  
m/s2  
m/s2  
Symbol Conditions  
m
typ  
0.6  
max  
Unit  
Weight  
kg  
Surface creepage distance  
Air strike distance  
DS  
Da  
25  
14  
mm  
mm  
1) Maximum ratings are those values beyond which damage to the device may occur  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5STP 12F4200  
On-state  
Maximum rated values 1)  
Parameter  
Average on-state current  
RMS on-state current  
Peak non-repetitive surge  
current  
Symbol Conditions  
min  
typ  
max  
1150  
1800  
15000  
Unit  
ITAVM  
ITRMS  
ITSM  
Half sine wave, Tc = 70°C  
A
A
A
tp = 10 ms, Tvj = 125°C,  
VD = VR = 0 V  
Limiting load integral  
I2t  
1125  
16000  
kA2s  
A
Peak non-repetitive surge  
ITSM  
tp = 8.3 ms, Tvj = 125°C,  
VD = VR=0 V  
current  
Limiting load integral  
Characteristic values  
Parameter  
On-state voltage  
Threshold voltage  
Slope resistance  
Holding current  
I2t  
1062  
kA2s  
Symbol Conditions  
min  
typ  
max  
2.1  
0.95  
0.575  
80  
60  
500  
200  
Unit  
VT  
VT0  
rT  
IT = 2000 A, Tvj= 125°C  
IT = 600 A - 1800 A, Tvj= 125°C  
V
V
mΩ  
mA  
mA  
mA  
mA  
IH  
Tvj = 25°C  
Tvj = 125°C  
Tvj = 25°C  
Tvj = 125°C  
Latching current  
IL  
Switching  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
typ  
max  
100  
Unit  
Critical rate of rise of on-  
di/dtcrit  
Cont.  
f = 50 Hz  
Cont.  
A/µs  
A/µs  
µs  
state current  
Tvj = 125°C, ITRM = 2000 A,  
VD ≤ 0.67⋅VDRM  
,
Critical rate of rise of on-  
state current  
di/dtcrit  
1000  
IFG = 2 A, tr = 0.5 µs  
f = 1Hz  
Circuit-commutated turn-off tq  
time  
Tvj = 125°C, ITRM = 2000 A,  
VR = 200 V, diT/dt = -5 A/µs,  
600  
VD ≤ 0.67⋅VDRM, dvD/dt = 20 V/µs,  
Characteristic values  
Parameter  
Recovery charge  
Symbol Conditions  
min  
2500  
max  
4000  
Unit  
µAs  
Qrr  
Tvj = 125°C, ITRM = 2000 A,  
VR = 200 V, diT/dt = -5 A/µs  
Delay time  
td  
2
µs  
VD = 0.4⋅VDRM, IFG = 2 A, tr = 0.5 µs  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1021-03 Jan. 02  
page 2 of 6  
5STP 12F4200  
Triggering  
Maximum rated values 1)  
Parameter  
Peak forward gate voltage VFGM  
Peak forward gate current IFGM  
Peak reverse gate voltage VRGM  
Symbol Conditions  
min  
min  
typ  
max  
Unit  
12  
10  
10  
3
V
A
V
Gate power loss  
PG  
For DC gate current  
W
Average gate power loss  
Characteristic values  
Parameter  
PGAV  
see Fig. 9  
Symbol Conditions  
typ  
max  
Unit  
Gate trigger voltage  
VGT  
Tvj = 25°C  
2.6  
V
Gate trigger current  
Gate non-trigger voltage  
Gate non-trigger current  
IGT  
VGD  
IGD  
Tvj = 25°C  
VD = 0.4 x VDRM, Tvjmax = 125°C  
VD = 0.4 x VDRM, Tvjmax = 125°C  
400  
mA  
V
mA  
0.3  
10  
Thermal  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
Tvj  
min  
typ  
typ  
max  
125  
Unit  
°C  
Operating junction  
temperature range  
Storage temperature range Tstg  
-40  
140  
°C  
Characteristic values  
Parameter  
Symbol Conditions  
min  
max  
Unit  
Thermal resistance junction Rth(j-c)  
Double-side cooled  
17  
K/kW  
to case  
Rth(j-c)A Anode-side cooled  
Rth(j-c)C Cathode-side cooled  
33  
35  
4
K/kW  
K/kW  
K/kW  
Thermal resistance case to Rth(c-h)  
Double-side cooled  
heatsink  
Rth(c-h)  
Single-side cooled  
8
K/kW  
Analytical function for transient thermal  
impedance:  
n
(t) = åR  
Z
thJC  
i
(1-e-t/τ i )  
i=1  
i
1
2
3
4
Ri(K/kW)  
10.35  
0.3723  
3.76  
0.0525  
2.29  
0.0057  
0.67  
0.0023  
τi(s)  
Fig. 1 Transient thermal impedance junction-to case.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1021-03 Jan. 02  
page 3 of 6  
5STP 12F4200  
Fig. 2 On-state characteristics.  
Fig. 3 On-state characteristics.  
Tj=125°C, 10ms half sine  
Fig. 4 On-state power dissipation vs. mean on-state  
Fig. 5 Max. permissible case temperature vs. mean  
current. Turn - on losses excluded.  
on-state current.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1021-03 Jan. 02  
page 4 of 6  
5STP 12F4200  
Fig. 6 Surge on-state current vs. pulse length. Half-  
Fig. 7 Surge on-state current vs. number of pulses.  
sine wave.  
Half-sine wave, 10 ms, 50Hz.  
IG (t)  
IGM  
≈ 2..5 A  
≥ 1.5 IGT  
IGon  
100 %  
90 %  
IGM  
diG/dt ≥ 2 A/µs  
tr  
≤ 1 µs  
tp(IGM  
)
≈ 5...20 µs  
diG/dt  
IGon  
10 %  
tr  
t
tp (IGM  
)
tp (IGon  
)
Fig. 8 Recommended gate current waveform.  
Fig. 9 Max. peak gate power loss.  
Fig. 10 Recovery charge vs. decay rate of on-state  
Fig. 11 Peak reverse recovery current vs. decay rate  
current.  
of on-state current.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1021-03 Jan. 02  
page 5 of 6  
5STP 12F4200  
Fig. 12 Device Outline Drawing.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA1021-03 Jan. 02  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
abbsem@ch.abb.com  
www.abbsem.com  
Email  
Internet  

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