5STP12N8200 [ABB]
Phase Control Thyristor; 相位控制晶闸管
| 型号： | 5STP12N8200 |
| 厂家： | 
THE ABB GROUP |
| 描述： | Phase Control Thyristor |
| 文件： | 总6页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDSM = 8500
IT(AV)M = 1200
IT(RMS) = 1880
V
A
A
A
V
Phase Control Thyristor
ITSM
V(T0)
rT
= 35×103
= 1.25
5STP 12N8500
= 0.48
mW
Doc. No. 5SYA1044-02 Nov. 04
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Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate
Blocking
Maximum rated values 1)
Symbol Conditions
5STP 12N8500 5STP 12N8200 5STP 12N7800
VDSM, VRSM f = 5 Hz, tp = 10 ms
VDRM, VRRM f = 50 Hz, tp = 10 ms
8500 V
8000 V
9000 V
8200 V
7700 V
7800 V
7300 V
8200 V
VRSM
tp = 5 ms, single pulse
8600 V
dV/dtcrit
Exp. to 5360 V, Tvj = 90°C
2000 V/µs
Characteristic values
Parameter
Symbol Conditions
IDSM VDSM, Tvj = 90°C
IRSM VRSM, Tvj = 90°C
min
typ
max
1000
400
Unit
Forward leakage current
Reverse leakage current
mA
mA
Mechanical data
Maximum rated values 1)
Parameter
Symbol Conditions
min
min
typ
90
max
Unit
Mounting force
Acceleration
FM
81
108
50
kN
a
a
Device unclamped
Device clamped
m/s2
m/s2
Acceleration
Characteristic values
Parameter
100
Symbol Conditions
typ
max
Unit
Weight
m
2.9
36
kg
Housing thickness
Surface creepage distance
Air strike distance
H
FM = 90 kN, Ta = 25 °C
35.3
mm
mm
mm
DS
Da
56
22
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5STP 12N8500
On-state
Maximum rated values 1)
Parameter
Symbol Conditions
min
typ
max
Unit
A
Average on-state current
RMS on-state current
IT(AV)M
IT(RMS)
ITSM
Half sine wave, Tc = 70°C
1200
1880
35×103
A
Peak non-repetitive surge
current
tp = 10 ms, Tvj = 90 °C,
VD = VR = 0 V
A
Limiting load integral
I2t
6.13×106 A2s
38×103
Peak non-repetitive surge
current
ITSM
tp = 8.3 ms, Tvj = 90 °C,
VD = VR = 0 V
A
Limiting load integral
Characteristic values
Parameter
I2t
5.99×106 A2s
Symbol Conditions
min
typ
max
Unit
V
On-state voltage
Threshold voltage
Slope resistance
Holding current
VT
V(T0)
rT
IT = 1500 A, Tvj = 90 °C
2
IT = 700 A - 2100 A, Tvj= 90 °C
1.25
0.48
150
125
600
800
V
mW
mA
mA
mA
mA
IH
Tvj = 25 °C
Tvj = 90 °C
Tvj = 25 °C
Tvj = 90 °C
Latching current
IL
Switching
Maximum rated values 1)
Parameter
Symbol Conditions
min
typ
max
Unit
Critical rate of rise of on-
state current
di/dtcrit
Tvj = 90 °C,
Cont.
250
A/µs
ITRM = 2000 A,
VD £ 5360 V,
f = 50 Hz
Cont.
Critical rate of rise of on-
state current
di/dtcrit
1000
A/µs
µs
f = 1Hz
IFG = A, tr = 0.5 µs
Circuit-commutated turn-off tq
time
Tvj = 90°C, ITRM = 2000 A,
VR = 200 V, diT/dt = -1 A/µs,
600
VD £ 0.67×VDRM, dvD/dt = 20V/µs
Characteristic values
Parameter
Symbol Conditions
min
2800
typ
max
Unit
Recovery charge
Qrr
Tvj = 90°C, ITRM = A,
VR = 200 V,
3400
µAs
diT/dt = -1 A/µs
Gate turn-on delay time
tgd
3
µs
VD = 0.4×VRM, IFG = 2 A,
tr = 0.5 µs, Tvj = 25 °C
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1044-02 Nov. 04
page 2 of 6
5STP 12N8500
Triggering
Maximum rated values 1)
Parameter
Symbol Conditions
min
min
typ
max
Unit
Peak forward gate voltage VFGM
Peak forward gate current IFGM
Peak reverse gate voltage VRGM
12
10
10
V
A
V
Average gate power loss
Characteristic values
Parameter
PG(AV)
see Fig. 9
Symbol Conditions
typ
max
Unit
Gate-trigger voltage
VGT
IGT
Tvj = 25 °C
2.6
V
Gate-trigger current
Tvj = 25 °C
400
mA
V
Gate non-trigger voltage
Gate non-trigger current
VGD
IGD
VD = 0.4 x VDRM, Tvjmax = 90 °C
VD = 0.4 x VDRM, Tvjmax = 90°C
0.3
10
mA
Thermal
Maximum rated values 1)
Parameter
Symbol Conditions
min
typ
typ
max
Unit
Operating junction
temperature range
Tvj
90
°C
Storage temperature range Tstg
Characteristic values
Parameter
-40
140
°C
Symbol Conditions
min
max
Unit
Thermal resistance junction Rth(j-c)
to case
Double-side cooled
Fm = 81...108 kN
5.7
K/kW
Rth(j-c)A Anode-side cooled
Fm = 81...108 kN
11.4
11.4
1
K/kW
K/kW
K/kW
K/kW
Rth(j-c)C Cathode-side cooled
Fm = 81...108 kN
Thermal resistance case to Rth(c-h)
heatsink
Double-side cooled
Fm = 81...108 kN
Rth(c-h)
Single-side cooled
Fm = 81...108 kN
2
Analytical function for transient thermal
impedance:
n
-t/ti
Z
(t) = R (1-e )
å
th(j-c)
th i
i=1
i
1
2
3
4
Rth i(K/kW)
3.400
0.8685
1.260
0.1572
0.680
0.0219
0.350
0.0078
ti(s)
Fig. 1 Transient thermal impedance junction-to case.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1044-02 Nov. 04
page 3 of 6
5STP 12N8500
On-state characteristic model:
VT = A+ B×iT +C×ln(iT +1)+ D× IT
Valid for iT = 200 – 4000 A
A
B
C
D
1.9700e+0 -1.8000e-4 -3.0000e-1 6.2000e-2
Fig. 2 On-state characteristics.
Fig. 3 Max. on-state voltage characteristics
Tj=125°C, 10ms half sine
Tcase (°C)
90
Double-sided cooling
DC
180° rectangular
180° sine
85
80
75
70
120° rectangular
0
200 400 600 800 1000 1200 1400 1600 1800
ITAV (A)
Fig. 4 On-state power dissipation vs. mean on-state
Fig. 5 Max. permissible case temperature vs. mean
current. Turn-on losses excluded.
on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1044-02 Nov. 04
page 4 of 6
5STP 12N8500
Fig. 6 Surge on-state current vs. pulse length. Half-
Fig. 7 Surge on-state current vs. number of pulses.
sine wave.
Half-sine wave, 10 ms, 50Hz.
IG (t)
IGM
IGon
» 2..5 A
³ 1.5 IGT
100 %
90 %
IGM
diG/dt ³ 2 A/ms
tr
£ 1 ms
tp(IGM
)
» 5...20 ms
diG/dt
IGon
10 %
tr
t
tp (IGM
)
tp (IGon
)
Fig. 8 Recommended gate current waveform.
Fig. 9 Max. peak gate power loss.
I
RM(A)
400
300
ITRM = 2000 A
Tj = Tjmax
max
min
200
102
90
80
70
60
50
40
30
30
1
2
3
4
5
6
7 8 910
20
-diT/dt (A/µs)
Fig. 10 Recovery charge vs. decay rate of on-state
Fig. 11 Peak reverse recovery current vs. decay rate
current.
of on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1044-02 Nov. 04
page 5 of 6
5STP 12N8500
Fig. 12 Device Outline Drawing.
Related application notes:
Doc. Nr
Titel
5SYA2020
5SYA2034
5SYA 2036
Design of RC-Snubber for Phase Control Applications
Gate-drive Recommendations for PCT's
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
Please refer to http://www.abb.com/semiconductors for actual versions.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Doc. No. 5SYA1044-02 Nov. 04
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax
+41 (0)58 586 1306
Email
Internet
abbsem@ch.abb.com
www.abb.com/semiconductors
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