5STP12F4200 [ABB]
Phase Control Thyristor; 相位控制晶闸管
| 型号： | 5STP12F4200 |
| 厂家： | 
THE ABB GROUP |
| 描述： | Phase Control Thyristor |
| 文件： | 总6页 (文件大小：274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSM
ITAVM
ITRMS
ITSM
T0
=
=
=
Phase Control Thyristor
= 15000
5STP 12F4200
=
=
0.575
T
mΩ
Doc. No. 5SYA1021-03 Jan. 02
• Patented free-floating silicon technology
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
Blocking
Maximum rated values 1)
Symbol
Conditions
5STP 12F4200 5STP 12F4000 5STP 12F3600
VDRM, VRRM f = 50 Hz, tp = 10 ms
4200 V
4000 V
3600 V
VRSM
tp = 5 ms, single pulse
4600 V
4400 V
4000 V
dV/dtcrit
Exp. to 0.67 x VDRM, Tvj = 125°C
1000 V/µs
Characteristic values
Parameter
Forward leakage current
Reverse leakage current
Symbol Conditions
IDRM VDRM, Tvj = 125°C
IRRM VRRM, Tvj = 125°C
min
typ
max
200
200
Unit
mA
mA
Mechanical data
Maximum rated values 1)
Parameter
Symbol Conditions
FM
min
min
typ
max
Unit
Mounting force
Acceleration
Acceleration
Characteristic values
Parameter
14
22
24
50
100
kN
a
a
Device unclamped
Device clamped
m/s2
m/s2
Symbol Conditions
m
typ
0.6
max
Unit
Weight
kg
Surface creepage distance
Air strike distance
DS
Da
25
14
mm
mm
1) Maximum ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5STP 12F4200
On-state
Maximum rated values 1)
Parameter
Average on-state current
RMS on-state current
Peak non-repetitive surge
current
Symbol Conditions
min
typ
max
1150
1800
15000
Unit
ITAVM
ITRMS
ITSM
Half sine wave, Tc = 70°C
A
A
A
tp = 10 ms, Tvj = 125°C,
VD = VR = 0 V
Limiting load integral
I2t
1125
16000
kA2s
A
Peak non-repetitive surge
ITSM
tp = 8.3 ms, Tvj = 125°C,
VD = VR=0 V
current
Limiting load integral
Characteristic values
Parameter
On-state voltage
Threshold voltage
Slope resistance
Holding current
I2t
1062
kA2s
Symbol Conditions
min
typ
max
2.1
0.95
0.575
80
60
500
200
Unit
VT
VT0
rT
IT = 2000 A, Tvj= 125°C
IT = 600 A - 1800 A, Tvj= 125°C
V
V
mΩ
mA
mA
mA
mA
IH
Tvj = 25°C
Tvj = 125°C
Tvj = 25°C
Tvj = 125°C
Latching current
IL
Switching
Maximum rated values 1)
Parameter
Symbol Conditions
min
typ
typ
max
100
Unit
Critical rate of rise of on-
di/dtcrit
Cont.
f = 50 Hz
Cont.
A/µs
A/µs
µs
state current
Tvj = 125°C, ITRM = 2000 A,
VD ≤ 0.67⋅VDRM
,
Critical rate of rise of on-
state current
di/dtcrit
1000
IFG = 2 A, tr = 0.5 µs
f = 1Hz
Circuit-commutated turn-off tq
time
Tvj = 125°C, ITRM = 2000 A,
VR = 200 V, diT/dt = -5 A/µs,
600
VD ≤ 0.67⋅VDRM, dvD/dt = 20 V/µs,
Characteristic values
Parameter
Recovery charge
Symbol Conditions
min
2500
max
4000
Unit
µAs
Qrr
Tvj = 125°C, ITRM = 2000 A,
VR = 200 V, diT/dt = -5 A/µs
Delay time
td
2
µs
VD = 0.4⋅VDRM, IFG = 2 A, tr = 0.5 µs
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1021-03 Jan. 02
page 2 of 6
5STP 12F4200
Triggering
Maximum rated values 1)
Parameter
Peak forward gate voltage VFGM
Peak forward gate current IFGM
Peak reverse gate voltage VRGM
Symbol Conditions
min
min
typ
max
Unit
12
10
10
3
V
A
V
Gate power loss
PG
For DC gate current
W
Average gate power loss
Characteristic values
Parameter
PGAV
see Fig. 9
Symbol Conditions
typ
max
Unit
Gate trigger voltage
VGT
Tvj = 25°C
2.6
V
Gate trigger current
Gate non-trigger voltage
Gate non-trigger current
IGT
VGD
IGD
Tvj = 25°C
VD = 0.4 x VDRM, Tvjmax = 125°C
VD = 0.4 x VDRM, Tvjmax = 125°C
400
mA
V
mA
0.3
10
Thermal
Maximum rated values 1)
Parameter
Symbol Conditions
Tvj
min
typ
typ
max
125
Unit
°C
Operating junction
temperature range
Storage temperature range Tstg
-40
140
°C
Characteristic values
Parameter
Symbol Conditions
min
max
Unit
Thermal resistance junction Rth(j-c)
Double-side cooled
17
K/kW
to case
Rth(j-c)A Anode-side cooled
Rth(j-c)C Cathode-side cooled
33
35
4
K/kW
K/kW
K/kW
Thermal resistance case to Rth(c-h)
Double-side cooled
heatsink
Rth(c-h)
Single-side cooled
8
K/kW
Analytical function for transient thermal
impedance:
n
(t) = åR
Z
thJC
i
(1-e-t/τ i )
i=1
i
1
2
3
4
Ri(K/kW)
10.35
0.3723
3.76
0.0525
2.29
0.0057
0.67
0.0023
τi(s)
Fig. 1 Transient thermal impedance junction-to case.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1021-03 Jan. 02
page 3 of 6
5STP 12F4200
Fig. 2 On-state characteristics.
Fig. 3 On-state characteristics.
Tj=125°C, 10ms half sine
Fig. 4 On-state power dissipation vs. mean on-state
Fig. 5 Max. permissible case temperature vs. mean
current. Turn - on losses excluded.
on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1021-03 Jan. 02
page 4 of 6
5STP 12F4200
Fig. 6 Surge on-state current vs. pulse length. Half-
Fig. 7 Surge on-state current vs. number of pulses.
sine wave.
Half-sine wave, 10 ms, 50Hz.
IG (t)
IGM
≈ 2..5 A
≥ 1.5 IGT
IGon
100 %
90 %
IGM
diG/dt ≥ 2 A/µs
tr
≤ 1 µs
tp(IGM
)
≈ 5...20 µs
diG/dt
IGon
10 %
tr
t
tp (IGM
)
tp (IGon
)
Fig. 8 Recommended gate current waveform.
Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-state
Fig. 11 Peak reverse recovery current vs. decay rate
current.
of on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1021-03 Jan. 02
page 5 of 6
5STP 12F4200
Fig. 12 Device Outline Drawing.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Doc. No. 5SYA1021-03 Jan. 02
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abbsem.com
Email
Internet
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