5STP12K6500 [ABB]
Phase Control Thyristor; 相位控制晶闸管
| 型号： | 5STP12K6500 |
| 厂家： | 
THE ABB GROUP |
| 描述： | Phase Control Thyristor |
| 文件： | 总6页 (文件大小：669K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDSM = 6500
IT(AV)M = 1370
IT(RMS) = 2160
V
A
A
A
V
Phase Control Thyristor
ITSM
V(T0)
rT
= 21.9×103
5STP 12K6500
= 1.18
= 0.632
mW
Doc. No. 5SYA1069-01 May 04
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Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate
Blocking
Maximum rated values 1)
Symbol Conditions
5STP 12K6500 5STP 12K6200 5STP 12K5800
VDSM, VRSM f = 5 Hz, tp = 10 ms
VDRM, VRRM f = 50 Hz, tp = 10 ms
6500 V
5600 V
6200 V
5300 V
5800 V
4900 V
dV/dtcrit
Exp. to 3750 V, Tvj = 125°C
2000 V/µs
Characteristic values
Parameter
Symbol Conditions
IDSM VDSM, Tvj = 125°C
IRSM VRSM, Tvj = 125°C
min
typ
max
600
600
Unit
Forward leakage current
Reverse leakage current
mA
mA
VDRM/ VRRM are equal to VDSM/ VRSM values up to Tvj = 110°C
Mechanical data
Maximum rated values 1)
Parameter
Symbol Conditions
min
min
typ
50
max
Unit
Mounting force
Acceleration
FM
45
60
50
kN
a
a
Device unclamped
Device clamped
m/s2
m/s2
Acceleration
Characteristic values
Parameter
100
Symbol Conditions
typ
max
1.15
Unit
Weight
m
kg
Housing thickness
Surface creepage distance
Air strike distance
H
FM = 50 kN, Ta = 25 °C
mm
mm
mm
DS
Da
45
24
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5STP 12K6500
On-state
Maximum rated values 1)
Parameter
Symbol Conditions
min
typ
max
Unit
A
Average on-state current
RMS on-state current
IT(AV)M
IT(RMS)
ITSM
Half sine wave, Tc = 70°C
1370
2160
21.9×103
A
Peak non-repetitive surge
current
tp = 10 ms, Tvj = 125 °C,
VD = VR = 0 V
A
Limiting load integral
I2t
2.4×106
23.35×103
A2s
A
Peak non-repetitive surge
current
ITSM
tp = 8.3 ms, Tvj = 125 °C,
VD = VR = 0 V
Limiting load integral
Characteristic values
Parameter
I2t
2.26×106 A2s
Symbol Conditions
min
typ
max
2.12
Unit
V
On-state voltage
Threshold voltage
Slope resistance
Holding current
VT
V(T0)
rT
IT = 1500 A, Tvj = 125 °C
IT = 800 A - 2000 A, Tvj= 125 °C
1.18
0.632
125
75
V
mW
mA
mA
mA
mA
IH
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
Latching current
IL
600
200
Switching
Maximum rated values 1)
Parameter
Symbol Conditions
min
typ
max
Unit
Critical rate of rise of on-
state current
di/dtcrit
Tvj = 125 °C,
Cont.
250
A/µs
ITRM = 1300 A,
VD £ 3750 V,
f = 50 Hz
Cont.
Critical rate of rise of on-
state current
di/dtcrit
1000
A/µs
µs
f = 1Hz
IFG = 2 A, tr = 0.5 µs
Circuit-commutated turn-off tq
time
Tvj = 125°C, ITRM = 800 A,
VR = 200 V, diT/dt = -1 A/µs,
800
VD £ 0.67×VDRM, dvD/dt = 20V/µs
Characteristic values
Parameter
Symbol Conditions
min
1600
typ
max
Unit
Recovery charge
Qrr
Tvj = 125°C, ITRM = 2000 A,
VR = 200 V,
2600
µAs
diT/dt = -1 A/µs
Gate turn-on delay time
tgd
3
µs
VD = 0.4×VRM, IFG = 2 A,
tr = 0.5 µs, Tvj = 25 °C
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1069-01 May 04
page 2 of 6
5STP 12K6500
Triggering
Maximum rated values 1)
Parameter
Symbol Conditions
min
min
typ
max
Unit
Peak forward gate voltage VFGM
Peak forward gate current IFGM
Peak reverse gate voltage VRGM
12
10
10
V
A
V
Average gate power loss
Characteristic values
Parameter
PG(AV)
see Fig. 9
Symbol Conditions
typ
max
Unit
Gate-trigger voltage
VGT
IGT
Tvj = 25 °C
2.6
V
Gate-trigger current
Tvj = 25 °C
400
mA
V
Gate non-trigger voltage
Gate non-trigger current
VGD
IGD
VD = 0.4 x VDRM, Tvjmax = 125 °C
VD = 0.4 x VDRM, Tvjmax = 125°C
0.3
10
mA
Thermal
Maximum rated values 1)
Parameter
Symbol Conditions
min
typ
typ
max
Unit
Operating junction
temperature range
Tvj
125
°C
Storage temperature range Tstg
Characteristic values
Parameter
-40
140
°C
Symbol Conditions
min
max
Unit
Thermal resistance junction Rth(j-c)
to case
Double-side cooled
Fm = 45...60 kN
11
K/kW
Rth(j-c)A Anode-side cooled
Fm = 45...60 kN
22
22
2
K/kW
K/kW
K/kW
K/kW
Rth(j-c)C Cathode-side cooled
Fm = 45...60 kN
Thermal resistance case to Rth(c-h)
heatsink
Double-side cooled
Fm = 45...60 kN
Rth(c-h)
Single-side cooled
Fm = 45...60 kN
4
Analytical function for transient thermal
impedance:
n
-t/ti
Z
(t) = R (1-e )
å
th(j-c)
th i
i=1
i
1
2
3
4
Rth i(K/kW)
7.347
0.9879
2.414
0.0995
0.797
0.0157
0.447
0.0040
ti(s)
Fig. 1 Transient thermal impedance junction-to case.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1069-01 May 04
page 3 of 6
5STP 12K6500
Max. on-state characteristic model:
Max. on-state characteristic model:
VT125
VT25
= A +B ×IT +CTvj ×ln(IT +1)+D × IT
= A + BTvj ×IT +CTvj ×ln(IT +1)+ D × IT
Tvj Tvj
Tvj
Tvj
Tvj
Valid for IT = 200 – 14000 A
Valid for IT = 200 – 14000 A
A25
B25
C25
D25
A125
B125
C125
D125
12.00×10-6 300.10×10-6 237.6×10-3 -5.56×10-3
197.70×10-6 295.90×10-6 131.10×10-3 18.70×10-3
Fig. 2 Max. on-state voltage characteristics
Fig. 3 Max. on-state voltage characteristics
Fig. 4 On-state power dissipation vs. mean on-state
Fig. 5 Max. permissible case temperature vs. mean
current. Turn-on losses excluded.
on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1069-01 May 04
page 4 of 6
5STP 12K6500
Fig. 6 Surge on-state current vs. pulse length. Half-
Fig. 7 Surge on-state current vs. number of pulses.
sine wave.
Half-sine wave, 10 ms, 50Hz.
IG (t)
IGM
IGon
» 2..5 A
³ 1.5 IGT
100 %
90 %
IGM
diG/dt ³ 2 A/ms
tr
£ 1 ms
tp(IGM
)
» 5...20 ms
diG/dt
IGon
10 %
tr
t
tp (IGM
)
tp (IGon
)
Fig. 8 Recommended gate current waveform.
Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-state
Fig. 11 Peak reverse recovery current vs. decay rate
current.
of on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1069-01 May 04
page 5 of 6
5STP 12K6500
g
g
Fig. 12 Device Outline Drawing.
Related application notes:
Doc. Nr
Titel
5SYA2020
5SYA2034
5SYA 2036
Design of RC-Snubber for Phase Control Applications
Gate-drive Recommendations for PCT's
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
Please refer to http://www.abb.com/semiconductors for actual versions.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Doc. No. 5SYA1069-01 May 04
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax
+41 (0)58 586 1306
Email
Internet
abbsem@ch.abb.com
www.abb.com/semiconductors
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