AP70T03GH-HF [A-POWER]

Simple Drive Requirement;


型号：	AP70T03GH-HF
厂家：	ADVANCED POWER ELECTRONICS CORP.
描述：	Simple Drive Requirement
文件：	总5页 (文件大小：106K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AP70T03GH/J-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

30V

9mΩ

60A

▼ Low Gate Charge

▼ Fast Switching

▼ RoHS Compliant

Description

AP70T03 series are from Advanced Power innovated design and silicon

process technology to achieve the lowest possible on-resistance and fast

switching performance. It provides the designer with an extreme efficient

device for use in a wide range of power applications.

The TO-252 package is widely preferred for all commercial-industrial

surface mount applications using infrared reflow technique and suited for

high current application due to the low connection resistance. The

through-hole version (AP70T03GJ) are available for low-profile

applications.

TO-252(H)

TO-251(J)

Absolute Maximum Ratings@T =25^oC(unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Rating

Units

V_DS

V_GS

Gate-Source Voltage

+20

Continuous Drain Current, V_GS@ 10V

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

195

P_D@T_C=25℃

Total Power Dissipation

Linear Derating Factor

0.36

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 175

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

Maximum Thermal Resistance, Junction-ambient

2.8

62.5

110

Rthj-a

Data and specifications subject to change without notice

201408266

AP70T03GH/J-HF

Electrical Characteristics@T_j=25^oC(unless otherwise specified)

Symbol

BV_DSS

R_DS(ON)

Parameter

Test Conditions

Min. Typ. Max. Units

Drain-Source Breakdown Voltage

Static Drain-Source On-Resistance²V_GS=10V, I_D=33A

V_GS=0V, I_D=250uA

mΩ

_GS=4.5V, I_D=20A

V_GS(th)

Gate Threshold Voltage

V_DS=V_GS, I_D=250uA

V_DS=10V, I_D=33A

V_DS=24V, V_GS=0V

g_fs

Forward Transconductance

Drain-Source Leakage Current

Drain-Source Leakage Current (T_j=125^oC) V_DS=24V ,V_GS=0V

I_DSS

250

I_GSS

Q_g

Gate-Source Leakage

Total Gate Charge

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

V_GS= +20V, V_DS=0V

I_D=33A

+100

Q_gs

Q_gd

t_d(on)

t_r

V_DS=20V

V_GS=4.5V

V_DS=15V

I_D=33A

105

t_d(off)

t_f

Turn-off Delay Time

Fall Time

R_G=3.3Ω

V_GS=10V

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

=0V

1485 2400

V_DS=25V

245

170

f=1.0MHz

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min. Typ. Max. Units

V_SD

t_rr

Forward On Voltage²

I_S=33A, V_GS=0V

I_S=20A, V_GS=0V,

dI/dt=100A/µs

1.3

Reverse Recovery Time

Reverse Recovery Charge

Q_rr

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test

3.Surface mounted on 1 in²copper pad of FR4 board

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

AP70T03GH/J-HF

120

200

150

100

T _C=175 ^oC

T _C=25 ^oC

10V

8.0V

10V

8.0V

6.0V

V _G=4.0V

0.0

1.5

3.0

4.5

0.0

1.5

3.0

4.5

V _DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

I _D=20A

I _D=33A

_C=25 ℃

V _G=10V

1.6

1.2

0.8

0.4

-50

100

175

T _j, Junction Temperature ( ^oC)

V _GS, Gate-to-Source Voltage (V)

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

2.5

1000

100

T _j=175 ^oC

T _j=25 ^oC

1.5

0.1

0.5

1.5

-50

100

175

T _j, Junction Temperature ( ^oC )

V _SD, Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature

AP70T03GH/J-HF

f=1.0MHz

10000

I _D=33A

V _DS=16V

_DS=20V

_DS=24V

C _iss

1000

C _oss

C _rss

100

V _DS, Drain-to-Source Voltage (V)

Q _G, Total Gate Charge (nC)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

1000

Duty factor = 0.5

10us

100us

1ms

0.2

100

0.1

0.05

0.02

0.01

P_DM

Single Pulse

Duty Factor = t/T

10ms

T _C=25 ^oC

Peak T_j= P_DMx R_thjc+ T_C

100ms

Single Pulse

0.01

0.1

100

0.00001

0.0001

0.001

0.01

0.1

V _DS, Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area

Fig10. Effective Transient Thermal Impedance

V_DS

V_G

90%

Q_G

4.5V

Q_GD

Q_GS

10%

V_GS

t_r

t_d(on)

^d(off)t_f

Charge

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

AP70T03GH/J-HF

MARKING INFORMATION

TO-251

Part Number

meet Rohs requirement

for low voltage MOSFET only

70T03GJ

Package Code

YWWSSS

Date Code (YWWSSS)

Y：Last Digit Of The Year

WW：Week

SSS：Sequence

TO-252

Part Number

meet Rohs requirement

for low voltage MOSFET only

70T03GH

YWWSSS

Package Code

Date Code (YWWSSS)

Y：Last Digit Of The Year

WW：Week

SSS：Sequence

AP70T03GH-HF [A-POWER]

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