AP70T03GH-HF_14 [A-POWER]
Simple Drive Requirement;
| 型号： | AP70T03GH-HF_14 |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | Simple Drive Requirement |
| 文件： | 总4页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP70T03GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
30V
9mΩ
60A
▼ Low Gate Charge
▼ Fast Switching
▼ RoHS Compliant
G
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-252(H)
TO-251(J)
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP70T03GJ)
are available for low-profile applications.
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
30
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
V
Continuous Drain Current, VGS @ 10V
ID@TC=25℃
ID@TC=100℃
IDM
60
A
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
43
A
195
A
PD@TC=25℃
Total Power Dissipation
53
W
Linear Derating Factor
0.36
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 175
-55 to 175
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Maximum Thermal Resistance, Junction-ambient
2.8
62.5
110
Rthj-a
Rthj-a
Data and specifications subject to change without notice
1
200810134
AP70T03GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
30
-
-
0.03
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
V/℃
mΩ
RDS(ON)
Static Drain-Source On-Resistance2 VGS=10V, ID=33A
-
9
V
GS=4.5V, ID=20A
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
18
mΩ
V
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=33A
VDS=30V, VGS=0V
3
35
-
-
S
IDSS
Drain-Source Leakage Current
uA
uA
nA
nC
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
1
Drain-Source Leakage Current (Tj=125oC) VDS=24V ,VGS=0V
-
250
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Output Charge
VGS= +20V, VDS=0V
ID=33A
-
+100
17
5
27
-
Qgs
Qgd
Qoss
td(on)
tr
VDS=20V
VGS=4.5V
10
13.5
8
-
VDD=15V,VGS=0V
VDS=15V
22
-
Turn-on Delay Time2
Rise Time
ID=33A
105
22
9
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=0.45Ω
VGS=0V
-
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1485 2400
VDS=25V
245
170
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=33A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.3
V
ns
nC
27
20
-
-
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP70T03GH/J-HF
120
90
60
30
0
200
150
100
50
T C =175 o C
T C =25 o C
10V
8.0V
10V
8.0V
6.0V
6.0V
V G =4.0V
V G =4.0V
0
0.0
1.5
3.0
4.5
0.0
1.5
3.0
4.5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
60
40
20
0
2
I D =20A
I D =33A
T
C =25 ℃
V G =10V
1.6
1.2
0.8
0.4
Ω
0
4
8
12
16
-50
25
100
175
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
1000
100
10
2
T j =175 o C
T j =25 o C
1.5
1
1
0.1
0.5
0
0.5
1
1.5
-50
25
100
175
T j , Junction Temperature ( o C )
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP70T03GH/J-HF
f=1.0MHz
12
10000
I D =33A
9
V DS =16V
V
DS =20V
DS =24V
C iss
V
6
3
0
1000
C oss
C rss
100
0
5
10
15
20
25
30
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
Duty factor = 0.5
10us
100us
1ms
0.2
100
10
1
0.1
0.1
0.05
0.02
PDM
t
0.01
T
Single Pulse
Duty Factor = t/T
10ms
T C =25 o C
Peak Tj = PDM x Rthjc + TC
100ms
Single Pulse
1s
0.01
DC
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
VDS
VG
90%
QG
4.5V
QGD
QGS
10%
VGS
t
tr
td(on)
d(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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