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AP70U02GH [A-POWER]

Simple Drive Requirement, Low On-resistance; 简单的驱动要求，低导通电阻
AP70U02GH
型号： AP70U02GH
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

Simple Drive Requirement, Low On-resistance
简单的驱动要求，低导通电阻

晶体 晶体管 功率场效应晶体管 开关 脉冲 驱动
文件： 总5页 (文件大小：131K)
中文：  中文翻译
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AP70U02GH  
Preliminary  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
▼ Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
25V  
9mΩ  
60A  
▼ Low On-resistance  
▼ Fast Switching Characteristic  
▼ RoHS Compliant  
G
Description  
G
D
S
The Advanced Power MOSFETs from APEC provide the designer with  
the best combination of fast switching, ruggedized device design, low  
on-resistance and cost-effectiveness.  
TO-252(H)  
The TO-252 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
25  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
± 20  
V
Continuous Drain Current, VGS @ 10V  
ID@TC=25℃  
ID@TC=100℃  
IDM  
60  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
41  
A
220  
A
PD@TC=25℃  
Total Power Dissipation  
47  
W
Linear Derating Factor  
0.31  
W/℃  
℃
℃
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 175  
-55 to 175  
Thermal Data  
Symbol  
.
Value  
Units  
℃/W  
℃/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
3.2  
Rthj-a  
110  
Data and specifications subject to change without notice  
200831071pre-1/4  
AP70U02GH  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=40A  
VGS=0V, ID=250uA  
25  
-
-
-
-
-
V
9
mΩ  
mΩ  
V
GS=4.5V, ID=30A  
-
15  
VGS(th)  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=10V, ID=40A  
VDS=25V, VGS=0V  
VGS= ±20V  
ID=40A  
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
39  
3
V
gfs  
Forward Transconductance  
-
S
IDSS  
IGSS  
Drain-Source Leakage Current  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
-
1
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
-
±100  
Qg  
18.5  
3.7  
12.1  
8.3  
102  
24  
30  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=20V  
VGS=4.5V  
-
VDS=15V  
-
ID=40A  
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=0.375Ω  
VGS=0V  
-
12  
-
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
1360 2180  
VDS=25V  
202  
198  
-
-
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
Reverse Recovery Time2  
IS=30A, VGS=0V  
IS=20A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.2  
V
ns  
nC  
30  
25  
-
-
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by max. junction temperature.  
2.Pulse test  
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.  
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT  
DEVICE OR SYSTEM ARE NOT AUTHORIZED.  
2/4  
AP70U02GH  
100  
80  
60  
40  
20  
0
150  
120  
90  
60  
30  
0
T C =175 o  
C
T C =25 o  
C
10V  
10V  
7.0V  
5.0V  
4.5V  
7.0V  
5.0V  
4.5V  
V G =3.0V  
V G =3.0V  
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
15  
13  
11  
9
1.8  
1.4  
1
I D = 30 A  
T
C =25 ℃  
I D =40A  
V
G =10V  
Ω
7
5
0.6  
2
4
6
8
10  
-50  
0
50  
100  
150  
200  
T j , Junction Temperature ( o C)  
VGS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
1.8  
1.2  
0.6  
0.0  
40  
30  
20  
10  
0
T j =175 o  
C
T j =25 o  
C
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
-50  
0
50  
100  
150  
200  
V SD , Source-to-Drain Voltage (V)  
T j , Junction Temperature ( o C )  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3/4  
AP70U02GH  
f=1.0MHz  
12  
10000  
1000  
100  
I D = 40 A  
9
V DS = 12 V  
V
DS = 15 V  
V
DS = 20 V  
C iss  
6
3
0
C oss  
C rss  
0
10  
20  
30  
40  
1
5
9
13  
17  
21  
25  
29  
Q G , Total Gate Charge (nC)  
V DS , Drain-to-Source Voltage (V)  
Fig7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1000  
100  
10  
1
Duty factor=0.5  
0.2  
0.1  
100us  
0.1  
0.05  
1ms  
10ms  
100ms  
PDM  
0.02  
t
T
0.01  
1
T c =25 o  
C
1s  
DC  
Duty factor = t/T  
Single Pulse  
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
0
0.01  
0.00001  
0.1  
1
10  
100  
0.0001  
0.001  
0.01  
0.1  
1
10  
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
4.5V  
QGD  
QGS  
10%  
VGS  
t
td(on) tr  
d(off) tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4/4  
ADVANCED POWER ELECTRONICS CORP.  
Package Outline : TO-252  
Millimeters  
D
SYMBOLS  
MIN  
NOM MAX  
D1  
A2  
A3  
B1  
D
1.80  
0.40  
0.40  
6.00  
4.80  
3.50  
2.20  
0.5  
2.30  
0.50  
0.70  
6.50  
5.35  
4.00  
2.63  
0.85  
5.70  
1.10  
2.30  
0.50  
2.80  
0.60  
1.00  
7.00  
5.90  
4.50  
3.05  
1.20  
6.30  
1.80  
--  
E2  
D1  
E3  
F
E3  
F1  
E1  
E2  
e
E1  
5.10  
0.50  
--  
C
0.35  
0.65  
B1  
F1  
F
1.All Dimensions Are in Millimeters.  
e
e
2.Dimension Does Not Include Mold Protrusions.  
R : 0.127~0.381  
A2  
(0.1mm  
C
A3  
Part Marking Information & Packing : TO-252  
Part Number  
Package Code  
meet Rohs requirement  
70U02GH  
LOGO  
Date Code (YWWSSS)  
YWWSSS  
Y：Last Digit Of The Year  
WW：Week  
SSS：Sequence  

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