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AP70T03GI [A-POWER]

Fast Switching Performance, Single Drive Requirement; 快速开关性能，单驱动要求
AP70T03GI
型号： AP70T03GI
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

Fast Switching Performance, Single Drive Requirement
快速开关性能，单驱动要求

开关 驱动
文件： 总5页 (文件大小：127K)
中文：  中文翻译
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AP70T03GI  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Fast Switching Performance  
▼ Single Drive Requirement  
BVDSS  
RDS(ON)  
ID  
30V  
9mΩ  
60A  
D
S
▼ Full Isolation Package  
G
Description  
Advanced Power MOSFETs from APEC provide the designer with  
the best combination of fast switching, ruggedized device design,  
low on-resistance and cost-effectiveness.  
G
D
S
TO-220CFM(I)  
The TO-220CFM isolation package is widely preferred for  
commercial-industrial through hole applications.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±20  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TC=100℃  
IDM  
60  
A
43  
A
195  
A
PD@TC=25℃  
TSTG  
Total Power Dissipation  
37.5  
W
℃
℃
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 175  
-55 to 175  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
4.0  
65  
Rthj-a  
Data and specifications subject to change without notice  
1
200805051  
AP70T03GI  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=33A  
VGS=0V, ID=250uA  
30  
-
-
-
-
-
V
9
mΩ  
mΩ  
VGS=4.5V, ID=20A  
-
18  
VGS(th)  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=10V, ID=33A  
VDS=24V, VGS=0V  
VGS= ±20V  
ID=33A  
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
35  
-
3
V
gfs  
Forward Transconductance  
Drain-Source Leakage Current  
-
S
IDSS  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
10  
IGSS  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
-
±100  
Qg  
17  
5
27  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=20V  
VGS=4.5V  
10  
8
-
VDS=15V  
-
ID=33A  
105  
22  
9
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=0.45Ω  
VGS=0V  
-
-
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
1485 2400  
VDS=25V  
245  
170  
-
-
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
Reverse Recovery Time2  
IS=33A, VGS=0V  
IS=20A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.3  
V
27  
20  
-
-
ns  
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP70T03GI  
200  
160  
120  
80  
120  
100  
80  
60  
40  
20  
0
10V  
8.0V  
10V  
8.0V  
6.0V  
T C =25 o C  
T C =175 o C  
6.0V  
V G =4.0V  
V G =4.0V  
40  
0
0
1
2
3
4
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
25  
21  
17  
13  
9
2.0  
1.6  
1.2  
0.8  
0.4  
I D = 20 A  
I
D =33A  
T
C =25 o C  
V G =10V  
Ω
5
2
4
6
8
10  
-50  
0
50  
100  
150  
200  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
2.6  
2.2  
1.8  
1.4  
1
40  
30  
20  
10  
0
T j =175 o C  
T j =25 o C  
0.6  
-50  
0
50  
100  
150  
200  
0
0.4  
0.8  
1.2  
1.6  
T j ,Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP70T03GI  
f=1.0MHz  
12  
10000  
1000  
100  
I D = 33 A  
10  
V DS =16V  
DS =20V  
DS =24V  
V
8
6
4
2
0
V
C iss  
C oss  
C rss  
0
4
8
12  
16  
20  
24  
1
5
9
13  
17  
21  
25  
29  
Q G , Total Gate Charge (nC)  
V DS , Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1000  
100  
10  
1
Duty factor=0.5  
0.2  
0.1  
0.1  
0.05  
100us  
1ms  
0.02  
0.01  
PDM  
0.01  
t
Single Pulse  
T
10ms  
Duty factor = t/T  
100ms  
1s  
T C =25 o C  
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
DC  
0.001  
1
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
0.1  
1
10  
100  
t , Pulse Width (s)  
V DS , Drain-to-Source Voltage (V)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
4.5V  
QGD  
QGS  
10%  
VGS  
tr  
td(on)  
td(off) tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4
ADVANCED POWER ELECTRONICS CORP.  
Package Outline : TO-220CFM  
E
A
Millimeters  
SYMBOLS  
MIN NOM MAX  
4.50 4.70 4.90  
2.30 2.65 3.00  
0.50 0.70 0.90  
0.95 1.20 1.50  
0.45 0.65 0.80  
2.30 2.60 2.90  
9.70 10.00 10.40  
2.91 3.41 3.91  
14.70 15.40 16.10  
A
A1  
b
c2  
φ
b1  
c
c2  
E
L3  
L4  
φ
e
L4  
---- 3.20  
---- 2.54  
----  
----  
L3  
1.All Dimensions Are in Millimeters.  
A1  
b1  
2.Dimension Does Not Include Mold Protrusions.  
c
b
e
Part Marking Information & Packing : TO-220CFM  
Part Number  
meet Rohs requirement  
LOGO  
Package Code  
70T03GI  
YWWSSS  
Date Code (YWWSSS)  
Y：Last Digit Of The Year  
WW：Week  
SSS：Sequence  
5

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