AP70T03GJ [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP70T03GJ |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP70T03GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
30V
9mΩ
60A
▼ Low Gate Charge
▼ Fast Switching
G
▼ RoHS Compliant
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-252(H)
TO-251(J)
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP70T03GJ) are available for low-profile applications.
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
30
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
±20
V
Continuous Drain Current, VGS @ 10V
ID@TA=25℃
ID@TA=100℃
IDM
60
A
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
43
A
195
A
PD@TA=25℃
Total Power Dissipation
53
W
Linear Derating Factor
0.36
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 175
-55 to 175
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
2.8
Rthj-a
110
Data and specifications subject to change without notice
200823053-1/4
AP70T0G3H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
30
-
-
0.03
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
V/℃
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=33A
GS=4.5V, ID=20A
-
9
V
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
18
mΩ
V
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=33A
VDS=30V, VGS=0V
VDS=24V ,VGS=0V
VGS= ±20V
3
35
-
-
S
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=175oC)
Gate-Source Leakage
Total Gate Charge2
IDSS
uA
uA
nA
nC
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
1
-
250
IGSS
Qg
-
±100
ID=33A
17
5
27
-
Qgs
Qgd
Qoss
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Output Charge
VDS=20V
VGS=4.5V
10
13.5
8
-
VDD=15V,VGS=0V
VDS=15V
22
-
Turn-on Delay Time2
Rise Time
ID=33A
105
22
9
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=0.45Ω
-
-
Ciss
Coss
Crss
Input Capacitance
VGS=0V
1485 2400
Output Capacitance
Reverse Transfer Capacitance
VDS=25V
245
170
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Min. Typ. Max. Units
VSD
trr
IS=33A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.3
V
ns
nC
27
20
-
-
Qrr
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP70T03GH/J
120
90
60
30
0
200
150
100
50
T C =25 o C
T C =175 o C
10V
8.0V
6.0V
10V
8.0V
6.0V
V
G =4.0V
V G =4.0V
0
0.0
1.5
3.0
4.5
0.0
1.5
3.0
4.5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
60
40
20
0
2
I D =20A
I D =33A
T
C =25 ℃
V
G =10V
1.6
1.2
0.8
0.4
Ω
Ω
Ω
Ω
-50
25
100
175
0
4
8
12
16
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
1000
2
100
10
1
T j =175 o C
T j =25 o C
1.5
1
0.1
0.5
-50
25
100
175
0
0.5
1
1.5
T j , Junction Temperature ( o C )
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP70T03GH/J
f=1.0MHz
12
10000
I D =33A
9
V
V
V
DS =16V
DS =20V
DS =24V
C iss
6
3
0
1000
C oss
C rss
100
0
5
10
15
20
25
30
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
10
1
Duty factor = 0.5
10us
100us
1ms
0.2
0.1
0.1
0.05
0.02
PDM
t
0.01
T
Single Pulse
T C =25 o C
10ms
Duty Factor = t/T
100ms
Peak Tj = PDM x Rthjc + TC
Single Pulse
DC
1
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
VDS
VG
90%
QG
4.5V
QGD
QGS
10%
VGS
t
tr
td(on)
d(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
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