AP4810GSM [A-POWER]
Simple Drive Requirement, Good Recovery Time; 简单的驱动要求,良好的恢复时间型号: | AP4810GSM |
厂家: | ADVANCED POWER ELECTRONICS CORP. |
描述: | Simple Drive Requirement, Good Recovery Time |
文件: | 总4页 (文件大小:110K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AP4810GSM
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL MOSFET WITH SCHOTTKY
DIODE
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
30V
13.5mΩ
11A
D
D
D
▼ Good Recovery Time
D
▼ Fast Switching Performance
G
S
S
SO-8
S
D
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
Schottky Diode
G
ruggedized device design, low on-resistance and cost-effectiveness.
S
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
30
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
11
V
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
A
9.3
50
A
A
VKA
Schottky Reverse Voltage
Continous Forward Current
30
V
IF@TA=25℃
IFM
1
A
Pulsed Diode Forward Current
Max Power Dissipation (MOSFET)
Max Power Dissipation (Schottky)
Storage Temperature Range
25
A
W
W
℃
℃
PD@TA=25℃
2.5
2.0
TSTG
TJ
-55 to 150
-55 to 150
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Value
50
Unit
℃/W
℃/W
Maximum Thermal Resistance, Junction-ambient3(MOSFET)
Maximum Thermal Resistance, Junction-ambient3(Schottky)
Rthj-a
Rthj-a
60
Data and specifications subject to change without notice
1
200910296
AP4810GSM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=10A
VGS=0V, ID=1mA
30
-
-
-
-
-
V
13.5 mΩ
VGS=4.5V, ID=5A
-
20
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=11A
VDS=30V, VGS=0V
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
18
-
3
V
S
gfs
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (T=70oC) V =24V, V =0V
-
IDSS
uA
mA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
100
-
1
j
DS
GS
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS=+20V, VDS=0V
ID=10A
-
+100
14
3.2
8.4
9
22.5
Qgs
Qgd
td(on)
tr
VDS=15V
-
-
-
-
-
-
VGS=4.5V
VDS=15V
ID=1A
6
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=15Ω
27
8
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
1010 1200
VDS=25V
200
170
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
IS
Diode+Schottky Forward On Voltage2 IS=1.0A, VGS=0V
-
0.48
0.5
V
Max Body-Diode+Schottky Continous Current
5
-
A
trr
Body Diode+Schottky Reverse Recovery Time IS=10A, VGS=0V,
-
-
21
13
ns
nC
Qrr
Body Diode+Schottky Reverse Recovery Charge dI/dt=100A/µs
-
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10 sec.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4810GSM
50
40
30
20
10
0
50
40
30
20
10
0
T A = 150 o
C
T A =25 o C
10V
7.0V
5.0V
4.5V
10V
7 .0V
5.0V
4.5V
V G =3.0V
V G =3.0V
0
1
2
3
4
5
6
0
1
2
3
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
1.6
1.4
1.2
1.0
0.8
0.6
I D = 5 A
I D = 10 A
T
A =25 ℃
V
G =10V
18
16
14
12
10
8
Ω
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.50
1.25
1.00
0.75
0.50
T j =125 o C
T j =25 o C
1
0.1
0.01
MOSFET+Schottky
0.001
0
0.2
0.4
0.6
0.8
-50
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4810GSM
f=1.0MHz
10000
1000
100
14
I
D = 10 A
12
10
8
V DS = 15 V
V
DS = 20 V
DS = 25 V
V
C iss
6
4
C oss
C rss
2
0
0
10
20
30
40
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
100us
0.2
10
1ms
0.1
0.1
0.05
10ms
1
0.02
100ms
1s
0.01
PDM
t
0.01
T
0.1
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
T A =25 o C
DC
Rthja = 125℃/W
Single Pulse
0.01
0.001
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
40
30
20
10
0
V
DS =5V
VG
QG
T j =25 o C
T j =150 o C
4.5V
QGS
QGD
Charge
Q
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
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TRANSISTOR 30 V, 0.022 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Power
A-POWER
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