AP4835GMT-HF [A-POWER]
Simple Drive Requirement, SO-8 Compatible; 简单的驱动要求, SO- 8兼容型号: | AP4835GMT-HF |
厂家: | ADVANCED POWER ELECTRONICS CORP. |
描述: | Simple Drive Requirement, SO-8 Compatible |
文件: | 总4页 (文件大小:100K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AP4835GMT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
-30V
21mΩ
-32A
D
S
▼ SO-8 Compatible
▼ Low On-resistance
G
▼ RoHS Compliant & Halogen-Free
D
D
D
D
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
S
S
The PMPAK® 5x6 package is special for DC-DC converters application
and the foot print is compatible with SO-8 with backside heat sink.
S
G
PMPAK® 5x6
Absolute Maximum Ratings
Symbol
Parameter
Rating
-30
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+25
V
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current (Chip)
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
-32
A
-12.5
-10
A
A
-70
A
PD@TC=25℃
PD@TA=25℃
TSTG
Total Power Dissipation
31.3
W
W
℃
℃
Total Power Dissipation
5
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
4
Rthj-a
25
Data & specifications subject to change without notice
1
201005031
AP4835GMT-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=-10V, ID=-15A
VGS=0V, ID=-250uA
-30
-
-
-
-
V
-
-
21
36
mΩ
mΩ
V
GS=-5V, ID=-10A
VGS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
VDS=VGS, ID=-250uA
VDS=-10V, ID=-15A
VDS=-30V, VGS=0V
VGS=+20V, VDS=0V
ID=-15A
-1
-
-
18
-
-3
V
gfs
-
S
IDSS
IGSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
-
-10
-
-
+100
Qg
-
14
3
22.4
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VDS=-15V
-
-
-
-
-
-
-
VGS=-4.5V
-
8.5
8
VDS=-15V
-
ID=-1A
-
7.5
38
28
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω
-
VGS=-10V
-
Ciss
Coss
Crss
Input Capacitance
VGS=0V
-
1175 1880
Output Capacitance
Reverse Transfer Capacitance
VDS=-25V
-
195
190
-
-
f=1.0MHz
-
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Reverse Recovery Time2
Test Conditions
IS=-15A, VGS=0V
IS=-15A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
VSD
trr
-
-
-
-
-1.2
V
26
16
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4835GMT-HF
80
60
40
20
0
100
80
60
40
20
0
C =25 o C
T C =150 o C
-10V
-7.0V
-6.0V
-5.0V
T
-10V
-7.0V
-6.0V
-5.0V
V G =-4.0V
V G =-4.0V
0
2
4
6
8
10
0
2
4
6
8
10
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
40
36
32
28
24
20
16
2.0
1.6
1.2
0.8
0.4
I D =-15A
I D =-10A
T
C =25 o C
V
G =-10V
Ω
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
16
12
8
1.4
1.2
1.0
0.8
0.6
0.4
T j =150 o C
T j =25 o C
4
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4835GMT-HF
f=1.0MHz
10
1600
1200
800
400
0
I D =-15A
V DS = -15 V
8
C iss
6
4
2
0
C oss
C rss
0
4
8
12
16
20
24
28
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
10
1
Operation in this area
Duty factor=0.5
100us
limited by R
DS(ON)
0.2
0.1
1ms
10ms
100ms
DC
0.1
0.05
PDM
t
T
0.02
0.01
Duty factor = t/T
T C =25 o C
Peak Tj = PDM x Rthjc + Tc
Single Pulse
Single Pulse
0.01
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
0.01
0.1
1
10
100
t , Pulse Width (s)
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
t
td(on) tr
d(off) tf
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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