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AP4835GM [A-POWER]

Simple Drive Requirement, Low On-resistance; 简单的驱动要求，低导通电阻
AP4835GM
型号： AP4835GM
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

Simple Drive Requirement, Low On-resistance
简单的驱动要求，低导通电阻

驱动
文件： 总5页 (文件大小：212K)
中文：  中文翻译
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AP4835GM  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
-30V  
20mΩ  
-9.2A  
D
D
D
▼ Low On-resistance  
▼ Fast Switching  
D
G
S
S
S
SO-8  
Description  
D
S
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
The SO-8 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
- 30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+25  
V
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
-9.2  
A
-7.4  
A
-50  
A
PD@TA=25℃  
Total Power Dissipation  
2.5  
W
Linear Derating Factor  
0.02  
W/℃  
℃
℃
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
50  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
℃/W  
Data and specifications subject to change without notice  
1
200811045  
AP4835GM  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=-10V, ID=-9A  
VGS=0V, ID=-250uA  
-30  
-
-
-
-
V
-
-
20  
35  
mΩ  
mΩ  
V
GS=-4.5V, ID=-6A  
VGS(th)  
Gate Threshold Voltage  
VDS=VGS, ID=-250uA  
VDS=-10V, ID=-7A  
VDS=-30V, VGS=0V  
-1  
-
-
16  
-
-3  
V
gfs  
Forward Transconductance  
Drain-Source Leakage Current  
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
-
-1  
Drain-Source Leakage Current (Tj=70oC) VDS=-24V, VGS=0V  
-
-
-25  
IGSS  
Qg  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VGS=+25V  
ID=-7A  
-
-
+100  
-
15  
2.8  
8
24  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=-15V  
VGS=-4.5V  
VDS=-15V  
ID=-1A  
-
-
-
-
8
-
-
6.6  
44  
34  
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=-10V  
RD=15Ω  
-
-
-
-
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
VGS=0V  
-
1175 1870  
195  
VDS=-25V  
f=1.0MHz  
-
-
190  
-
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
Reverse Recovery Time2  
IS=-2.1A, VGS=0V  
IS=-7A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
-1.2  
V
ns  
nC  
28  
18  
-
-
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP4835GM  
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
T A =150 o C  
-10V  
-7.0V  
-5.0V  
-4.5V  
T A =25 o C  
-10V  
-7.0V  
-5.0V  
-4.5V  
V
G =-3.0V  
V G =-3.0V  
0
1
2
3
4
0
2
4
6
-V DS , Drain-to-Source Voltage (V)  
-V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
1.7  
1.3  
0.9  
0.5  
30  
26  
22  
18  
14  
10  
I D =-6A  
I D =-9A  
T
A =25 o C  
V G =-10V  
Ω
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
-V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
10  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
8
6
T j =150 o C  
T j =25 o C  
4
2
0
-50  
0
50  
100  
150  
0.1  
0.3  
0.5  
0.7  
0.9  
1.1  
T j , Junction Temperature ( o C)  
-V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP4835GM  
f=1.0MHz  
16  
10000  
I D = -7A  
V
DS = -15V  
12  
C iss  
8
1000  
4
C oss  
C rss  
0
100  
0
10  
20  
30  
40  
1
5
9
13  
17  
21  
25  
29  
Q G , Total Gate Charge (nC)  
-V DS , Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1
100.00  
10.00  
1.00  
Duty factor=0.5  
0.2  
0.1  
100us  
1ms  
0.1  
10ms  
0.05  
PDM  
t
100ms  
T
0.10  
0.02  
0.01  
1s  
T A =25 o C  
Duty factor = t/T  
Single Pulse  
DC  
Peak Tj = PDM x Rthja + Ta  
Rthja = 125℃/W  
Single Pulse  
0.01  
0.01  
0.1  
1
10  
100  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
-V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
40  
30  
20  
10  
0
VG  
V DS =-5V  
T j =25 o C  
T j =150 o C  
QG  
-4.5V  
QGS  
QGD  
Charge  
Q
0
1
2
3
4
5
6
-V GS , Gate-to-Source Voltage (V)  
Fig 11. Transfer Characteristics  
Fig 12. Gate Charge Circuit  
4
ADVANCED POWER ELECTRONICS CORP.  
Package Outline : SO-8  
D
Millimeters  
SYMBOLS  
MIN  
1.35  
0.10  
0.33  
0.19  
4.80  
5.80  
3.80  
NOM  
MAX  
A
A1  
B
c
1.55  
1.75  
0.25  
0.51  
0.25  
5.00  
6.50  
4.00  
8
7
6
3
5
4
0.18  
0.41  
E
E1  
0.22  
D
E
4.90  
1
6.15  
2
E1  
e
3.90  
1.27 TYP  
0.254 TYP  
－
e
G
L
0.38  
0.00  
0.90  
8.00  
B
α
4.00  
A
A1  
G
1.All Dimension Are In Millimeters.  
2.Dimension Does Not Include Mold Protrusions.  
Part Marking Information & Packing : SO-8  
Part Number  
Package Code  
meet Rohs requirement  
4835
GM  
YWWSSS  
Date Code (YWWSSS)  
Y：Last Digit Of The Year  
WW：Week  
SSS：Sequence  
5

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