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AP4813GSM-HF [A-POWER]

Simple Drive Requirement, Good Recovery Time; 简单的驱动要求，良好的恢复时间
AP4813GSM-HF
型号： AP4813GSM-HF
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

Simple Drive Requirement, Good Recovery Time
简单的驱动要求，良好的恢复时间

驱动
文件： 总4页 (文件大小：108K)
中文：  中文翻译
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AP4813GSM-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL MOSFET WITH SCHOTTKY  
DIODE  
▼ Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
30V  
9mΩ  
13A  
D
D
D
▼ Good Recovery Time  
D
▼ Fast Switching Performance  
G
S
▼ RoHS Compliant & Halogen-Free  
S
SO-8  
S
D
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
Schottky Diode  
G
ruggedized device design, low on-resistance and cost-effectiveness.  
S
The SO-8 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
13  
V
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
A
10.6  
50  
A
A
VKA  
Schottky Reverse Voltage  
Continous Forward Current  
Pulsed Diode Forward Current  
30  
V
IF@TA=25℃  
IFM  
1
A
25  
A
Max Power Dissipation (MOSFET)  
Max Power Dissipation (Schottky)  
Storage Temperature Range  
2.5  
2.0  
W
W
℃
℃
PD@TA=25℃  
TSTG  
TJ  
-55 to 150  
-55 to 150  
Operating Junction Temperature Range  
Thermal Data  
Symbol  
Parameter  
Value  
50  
Unit  
℃/W  
℃/W  
Maximum Thermal Resistance, Junction-ambient3(MOSFET)  
Maximum Thermal Resistance, Junction-ambient3(Schottky)  
Rthj-a  
Rthj-a  
60  
Data and specifications subject to change without notice  
1
200910301  
AP4813GSM-HF  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=12A  
VGS=0V, ID=250uA  
30  
-
-
-
-
-
V
9
mΩ  
mΩ  
VGS=4.5V, ID=8A  
-
15  
VGS(th)  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=10V, ID=8A  
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20  
-
3
V
S
gfs  
Forward Transconductance  
Drain-Source Leakage Current  
Drain-Source Leakage Current (T=70oC) V =24V, V =0V  
-
IDSS  
uA  
mA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
VDS=30V, VGS=0V  
100  
-
1
j
DS  
GS  
IGSS  
Qg  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VGS=+20V, VDS=0V  
ID=8A  
-
+100  
11.5  
2.5  
7
18  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=15V  
VGS=4.5V  
VDS=15V  
-
9
-
ID=1A  
7
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=15Ω  
23  
8
-
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VGS=0V  
730 1170  
VDS=25V  
205  
150  
1.5  
-
-
-
f=1.0MHz  
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Diode+Schottky Forward On Voltage2 IS=1.0A, VGS=0V  
-
-
-
0.48  
20  
9
0.5  
V
Body Diode+Schottky Reverse Recovery Time IS=8A, VGS=0V,  
-
-
ns  
nC  
Qrr  
Body Diode+Schottky Reverse Recovery Charge dI/dt=100A/µs  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10 sec.  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP4813GSM-HF  
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
A = 150 o  
C
10V  
7.0V  
6.0V  
T A =25 o C  
T
10V  
7.0V  
6.0V  
5.0V  
V G = 4.0V  
5.0V  
V G =4.0V  
0
1
2
3
4
0
1
2
3
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
16  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
I D = 8 A  
I D = 12 A  
T
A =25 ℃  
V
G =10V  
14  
12  
10  
8
Ω
6
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
16  
12  
8
1.50  
1.25  
1.00  
0.75  
0.50  
T j =150 o C  
T j =25 o C  
4
MOSFET+Schottky  
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP4813GSM-HF  
f=1.0MHz  
10  
1600  
1200  
800  
400  
0
I
D = 8 A  
8
6
4
2
0
V DS = 15 V  
DS = 18 V  
V
V
DS = 24 V  
C iss  
C oss  
C rss  
0
4
8
12  
16  
20  
24  
1
5
9
13  
17  
21  
25  
29  
Q G , Total Gate Charge (nC)  
V DS , Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
100  
1
Duty factor=0.5  
Operation in this  
area limited by  
RDS(ON)  
100us  
0.2  
10  
1ms  
0.1  
0.1  
0.05  
10ms  
1
0.02  
100ms  
1s  
0.01  
PDM  
t
0.01  
T
0.1  
Single Pulse  
Duty factor = t/T  
T A =25 o C  
Peak Tj = PDM x Rthja + Ta  
DC  
Rthja = 125℃/W  
Single Pulse  
0.001  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
0.01  
0.1  
1
10  
100  
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VDS  
VG  
90%  
QG  
4.5V  
QGS  
QGD  
10%  
VGS  
tr  
td(on)  
td(off) tf  
Charge  
Q
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4

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