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AP4816GSM [A-POWER]

TRANSISTOR 30 V, 0.022 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Power;
AP4816GSM
型号： AP4816GSM
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

TRANSISTOR 30 V, 0.022 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Power

开关 脉冲 光电二极管 晶体管
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AP4816GSM  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
DUAL N-CHANNEL MOSFET WITH  
SCHOTTKY DIODE  
S1/D2  
S1/D2  
▼ Simple Drive Requirement  
CH-1 BVDSS  
RDS(ON)  
30V  
S1/D2  
D1  
▼ DC-DC Converter Suitable  
▼ Fast Switching Performance  
22mΩ  
ID  
CH-2 BVDSS  
RDS(ON)  
6.7A  
30V  
13mΩ  
11.5A  
G2  
S2/A  
S2/A  
G1  
SO-8  
Description  
ID  
The Advanced Power MOSFETs from APEC provide the designer  
with the best combination of fast switching, ruggedized device  
design, low on-resistance and cost-effectiveness.  
D1  
G1  
The SO-8 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as DC/DC converters.  
N-Channel 1  
MOSFET  
S1/D2  
Schottky Diode  
G2  
N-Channel 2  
MOSFET  
S2/A  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Channel-1  
Units  
Channel-2  
30  
VDS  
VGS  
Drain-Source Voltage  
30  
±20  
6.7  
5.3  
30  
V
V
Gate-Source Voltage  
±20  
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
11.5  
9.2  
A
A
40  
A
PD@TA=25℃  
Total Power Dissipation  
1.4  
0.01  
2.4  
W
W/℃  
℃
℃
Linear Derating Factor  
0.02  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
Typ.  
Max.  
90  
Rthj-a (CH-1)  
Rthj-a (CH-2)  
Thermal Resistance Junction-ambient3  
Thermal Resistance Junction-ambient3  
70  
42  
52  
℃/W  
℃/W  
℃/W  
53  
Rthj-a (Schottky) Thermal Resistance Junction-ambient3  
60  
Data and specifications subject to change without notice  
200515071-1/9  
AP4816GSM  
CH-1 Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
30  
-
-
0.03  
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA  
V/℃  
mΩ  
RDS(ON)  
Static Drain-Source On-Resistance2 VGS=10V, ID=6A  
-
22  
V
GS=4.5V, ID=5A  
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
30  
mΩ  
V
VGS(th)  
gfs  
Gate Threshold Voltage  
Forward Transconductance  
Drain-Source Leakage Current (Tj=25oC)  
Drain-Source Leakage Current (Tj=70oC)  
Gate-Source Leakage  
Total Gate Charge2  
VDS=VGS, ID=250uA  
VDS=10V, ID=6A  
VDS=30V, VGS=0V  
VDS=24V, VGS=0V  
VGS=±20V  
3
10  
-
-
S
IDSS  
1
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
-
25  
IGSS  
-
±100  
Qg  
ID=6A  
11  
3
18  
-
Qgs  
Qgd  
td(on)  
tr  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VDS=24V  
VGS=4.5V  
7
-
VDS=15V  
9
-
ID=1A  
7
-
td(off)  
tf  
Turn-off Delay Time  
RG=3.3Ω,VGS=10V  
RD=15Ω  
22  
7
-
Fall Time  
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
VGS=0V  
780 1250  
Output Capacitance  
VDS=25V  
180  
140  
1.25  
-
-
-
Reverse Transfer Capacitance  
Gate Resistance  
f=1.0MHz  
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
Reverse Recovery Time2  
IS=1.2A, VGS=0V  
IS=6A, VGS=0V  
dI/dt=100A/µs  
-
-
-
-
1.2  
V
21  
15  
-
-
ns  
nC  
Qrr  
Reverse Recovery Charge  
2/9  
AP4816GSM  
CH-2 Electrical Characteristics@T=25oC(unless otherwise specified)  
j
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
30  
-
-
0.03  
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=1mA  
Static Drain-Source On-Resistance2 VGS=10V, ID=11A  
V/℃  
mΩ  
RDS(ON)  
-
13  
VGS=4.5V, ID=8A  
-
-
18.5 mΩ  
VGS(th)  
gfs  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=10V, ID=11A  
VDS=30V, VGS=0V  
VDS=24V, VGS=0V  
VGS=±20V  
1
-
-
3
V
S
Forward Transconductance  
Drain-Source Leakage Current ( =25oC)  
15  
-
-
IDSS  
uA  
mA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
-
100  
Tj  
Drain-Source Leakage Current ( j=70oC)  
-
-
1
T
IGSS  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
-
-
±100  
Qg  
ID=8A  
-
20  
5
30  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=24V  
-
VGS=4.5V  
-
12  
12  
8
-
VDS=15V  
-
-
ID=1A  
-
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=15Ω  
-
31  
12  
-
-
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VGS=0V  
-
1450 2320  
VDS=25V  
-
320  
230  
1.5  
-
-
-
f=1.0MHz  
-
f=1.0MHz  
-
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Reverse Recovery Time2  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
IS=1A, VGS=0V  
IS=8A, VGS=0V  
dI/dt=100A/µs  
-
-
-
-
0.5  
V
27  
18  
-
-
ns  
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10 sec.  
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.  
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT  
DEVICE OR SYSTEM ARE NOT AUTHORIZED.  
3/9  
AP4816GSM  
Schottky Specifications@Tj=25oC(unless otherwise specified)  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VF  
Forward Voltage Drop  
IF=1.0A  
-
-
-
-
0.47  
0.004  
0.5  
0.5  
0.2  
1
V
mA  
mA  
pF  
Irm  
Maximum Reverse Leakage Current Vr=30V  
Maximum Reverse Leakage Current Vr=30V,Tj=100℃  
Junction Capacitance Vr=10V  
CT  
66  
-
4/9  
AP4816GSM  
Channel-1  
120  
80  
70  
60  
50  
40  
30  
20  
10  
0
T A =25 o  
C
10V  
T A = 150 ℃  
100  
80  
60  
40  
20  
0
10V  
7.0V  
7.0V  
5.0V  
4.5V  
5.0V  
4.5V  
V
G =3.0V  
VG =3.0V  
0
1
2
3
4
5
0
1
2
3
4
VDS , Drain-to-Source Voltage (V)  
VDS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
32  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
I D =6A  
VG =10V  
I D = 5 A  
T
A =25 o  
C
28  
24  
20  
16  
Ω
3
5
7
9
11  
-50  
0
50  
100  
150  
T j ,Junction Temperature ( o C)  
VGS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
6
5
4
3
2
1
0
2.5  
2
T j =150 o  
C
T j =25 o  
C
1.5  
1
0.5  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
-50  
0
50  
100  
150  
T j ,Junction Temperature ( o C)  
VSD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
5/9  
AP4816GSM  
Channel-1  
f=1.0MHz  
C iss  
16  
1000  
100  
10  
I D =6A  
12  
V
V
DS =15V  
DS =20V  
C oss  
C rss  
VDS =24V  
8
4
0
0
5
10  
15  
20  
25  
1
5
9
13  
17  
21  
25  
29  
QG , Total Gate Charge (nC)  
VDS , Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
100  
1
Duty factor=0.5  
0.2  
0.1  
10  
100us  
1ms  
0.1  
0.05  
0.02  
1
10ms  
100ms  
1s  
0.01  
PDM  
t
0.01  
Single Pulse  
T
0.1  
T A =25 o  
Single Pulse  
C
Duty factor = t/T  
Peak Tj = PDM x Rthja + Ta  
Rthja =125℃/W  
DC  
0.001  
0.0001  
0.01  
0.1  
1
10  
100  
0.001  
0.01  
0.1  
1
10  
100  
1000  
VDS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VDS  
VG  
90%  
QG  
4.5V  
QGS  
QGD  
10%  
VGS  
tr  
t
d(off)tf  
td(on)  
Charge  
Q
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
6/9  
AP4816GSM  
Channel-2  
180  
125  
100  
75  
50  
25  
0
T A = 25 o  
C
10V  
10V  
7.0V  
T A =150 o  
C
150  
120  
90  
60  
30  
0
7.0V  
5.0V  
4.5V  
5.0V  
4.5V  
V G = 3.0V  
V G = 3.0V  
0
1
2
3
4
5
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
20  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
I D = 11 A  
I D = 8 A  
V
G =10V  
18  
16  
14  
12  
10  
T
A =25 o  
C
Ω
-50  
0
50  
100  
150  
3
5
7
9
11  
T j , Junction Temperature ( o C)  
V GS ,Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
10.00  
1.00  
0.10  
0.01  
2.0  
1.9  
1.8  
1.7  
1.6  
1.5  
T j =150 o  
C
T j =25 o  
C
0.1  
0.3  
0.5  
0.7  
0.9  
1.1  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
7/9  
AP4816GSM  
Channel-2  
f=1.0MHz  
16  
10000  
1000  
100  
I
D =8A  
12  
V DS =15V  
V
V
DS =20V  
DS =24V  
C iss  
8
4
C oss  
C rss  
0
0
10  
20  
30  
40  
50  
1
5
9
13  
17  
21  
25  
29  
V DS , Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
100  
1
Duty factore=0.5  
100us  
0.2  
10  
1ms  
0.1  
0.1  
0.05  
10ms  
100ms  
1
0.02  
0.01  
PDM  
t
0.01  
Single Pulse  
T
1s  
0.1  
T A =25 o  
Single Pulse  
C
Duty factor = t/T  
Peak Tj = PDM x Rthja + Ta  
Rthja=100℃/W  
DC  
0.001  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
0.1  
1
10  
100  
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VDS  
VG  
90%  
QG  
4.5V  
QGS  
QGD  
10%  
VGS  
td(off)  
tr  
td(on)  
tf  
Charge  
Q
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
8/9  
AP4816GSM  
Schottky  
10  
10  
1
0.1  
T j =150 o  
C
T j =25 o  
C
30V  
24V  
0.01  
0.001  
0.0001  
0
1
25  
50  
75  
100  
125  
0
0.3  
0.6  
0.9  
1.2  
1.5  
T j , Junction Temperature ( o C)  
V F , Forward Voltage Drop (V)  
Fig 1. Reverse Current vs  
Junction Temperature  
Fig 2. Typical Forward Characteristics  
f=1.0MHz  
1000  
100  
10  
1
5
9
13  
17  
21  
25  
29  
V DS , Drain-to-Source Voltage (V)  
Fig 3. Typical Junction Capacitance  
9/9  

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