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AP01L60J [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
AP01L60J
型号： AP01L60J
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲
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中文：  中文翻译
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AP01L60H/J  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Repetitive Avalanche Rated  
▼ Fast Switching Speed  
BVDSS  
RDS(ON)  
ID  
600V  
12Ω  
1A  
D
S
▼ Simple Drive Requirement  
▼ RoHS Compliant  
G
Description  
G
The TO-252 package is universally preferred for all commercial-industrial  
surface mount applications and suited for AC/DC converters. The  
through-hole version (AP01L60J) is available for low-profile applications.  
D
S
TO-252(H)  
TO-251(J)  
G
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
600  
Gate-Source Voltage  
±30  
V
ID@TC=25℃  
ID@TC=100℃  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
1
A
0.8  
A
3
29  
A
PD@TC=25℃  
Total Power Dissipation  
W
Linear Derating Factor  
Single Pulse Avalanche Energy2  
0.232  
0.5  
W/℃  
mJ  
A
EAS  
IAR  
Avalanche Current  
1
EAR  
TSTG  
TJ  
Repetitive Avalanche Energy  
Storage Temperature Range  
Operating Junction Temperature Range  
0.5  
mJ  
℃
℃
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Value  
4.3  
Units  
℃/W  
℃/W  
Rthj-c  
Max.  
Max.  
Rthj-a  
110  
Data & specifications subject to change without notice  
200629052-1/4  
AP01L60H/J  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=1mA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
600  
-
0.8  
-
-
-
V
V/℃  
Ω
ΔBVDSS/ΔTj  
RDS(ON)  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA  
-
-
Static Drain-Source On-Resistance  
Gate Threshold Voltage  
VGS=10V, ID=0.5A  
12  
VGS(th)  
VDS=VGS, ID=250uA  
VDS=10V, ID=0.5A  
VDS=600V, VGS=0V  
VDS=480V, VGS=0V  
VGS=±30V  
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.8  
-
4
V
gfs  
Forward Transconductance  
Drain-Source Leakage Current (Tj=25oC)  
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
10  
Drain-Source Leakage Current (Tj=150oC)  
-
100  
IGSS  
Qg  
Gate-Source Leakage  
Total Gate Charge3  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time3  
Rise Time  
-
±100  
ID=1A  
4.0  
1.0  
1.1  
6.6  
5.0  
11.7  
9.2  
170  
30.7  
5.1  
-
-
-
-
-
-
-
-
-
-
Qgs  
Qgd  
td(on)  
tr  
VDS=480V  
VGS=10V  
VDD=300V  
ID=1A  
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=300Ω  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
VGS=0V  
VDS=25V  
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
A
A
V
IS  
Continuous Source Current ( Body Diode )  
Pulsed Source Current ( Body Diode )1  
Forward On Voltage3  
VD=VG=0V , VS=1.2V  
-
-
-
-
-
-
1
5
ISM  
VSD  
Tj=25℃, IS=1A, VGS=0V  
1.2  
Notes:  
1.Pulse width limited by safe operating area.  
2.Starting Tj=25oC , VDD=50V , L=1.0mH , RG=25Ω , IAS=1.0A.  
3.Pulse width <300us , duty cycle <2%.  
2/4  
AP01L60H/J  
1.5  
1.0  
0.5  
0.0  
1.0  
0.8  
0.5  
0.3  
0.0  
10V  
5.0V  
10V  
6.0V  
5.5V  
5.0V  
T C =25 o C  
T C =150 o C  
4.5V  
V G =4.5V  
V G =4.0V  
0
10  
20  
30  
40  
0
12  
24  
36  
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
1.2  
3
I D =0.5A  
V
G =10V  
1.1  
2
1
0
1
0.9  
-50  
0
50  
100  
150  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
T j , Junction Temperature ( o C )  
Fig 3. Normalized BVDSS v.s. Junction  
Temperature  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
10  
3.5  
1
3.0  
2.5  
2.0  
T j = 150 o  
C
T j = 25 o  
C
0.1  
0.01  
0
0.4  
0.8  
1.2  
1.6  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C )  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3/4  
AP01L60H/J  
f=1.0MHz  
16  
1000  
100  
10  
I D =1A  
12  
V
DS =480V  
C iss  
C oss  
C rss  
8
4
0
1
0
1.5  
3
4.5  
6
1
5
9
13  
17  
21  
25  
29  
Q G , Total Gate Charge (nC)  
V DS , Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1
10  
Duty factor=0.5  
0.2  
1
10us  
0.1  
0.1  
0.05  
100us  
0.02  
PDM  
0.1  
t
0.01  
1ms  
T
T c =25 o C  
Single Pulse  
Duty Factor = t/T  
10ms  
100ms  
Single Pulse  
Peak Tj = PDM x Rthjc + TC  
0.01  
0.01  
1
10  
100  
1000  
10000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
t , Pulse Width (s)  
V DS , Drain-to-Source Voltage (V)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
10V  
QGD  
QGS  
10%  
VGS  
t
td(on) tr  
d(off) tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4/4  

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